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Microchip Technology 1N4988US/TR

Part No.:
1N4988US/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
Aetrix1N4988US/TR.pdf
Description:
DIODE ZENER 180V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:68

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Product details

Overview

1N4988US/TR from Microsemi is a surface-mount, voidless-hermetically-sealed glass Zener diode rated for 5 W power dissipation at TEC = 125 °C, with nominal Zener voltage of 180 V ±5%, dynamic impedance of 450 Ω at IZT = 5 mA, and maximum reverse leakage current of 2 μA at VR = 144 V - used in high-reliability voltage regulation and overvoltage protection circuits for aerospace power supplies.

For engineers reviewing the 1N4988US/TR datasheet, 1N4988US/TR pinout, 1N4988US/TR application, or 1N4988US/TR equivalent, this part supports MIL-PRF-19500/356 qualified designs requiring extended temperature operation (–65 °C to +175 °C), radiation-hardened behavior, and robust surge immunity in mission-critical analog power conditioning.

Technical Context

This Zener regulator operates in reverse breakdown with tightly controlled voltage regulation across wide current (10%–50% of IZM) and temperature ranges. Its voidless-glass hermetic seal and Category III internal metallurgical bond ensure long-term stability under thermal cycling and mechanical stress.

It delivers 180 V nominal regulation with ±5% tolerance, 450 Ω dynamic impedance at 5 mA test current, and <2 μA leakage at 144 V - enabling precise clamping in high-voltage bias networks and reference stabilization where drift must remain below 0.11%/°C.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 180 V ±5% at IZT = 5 mA - defines stable regulation point for high-voltage reference and clamp circuits.
Power Dissipation 5 W @ TEC = 125 °C - enables sustained operation in compact, conduction-cooled power modules.
Dynamic Impedance (ZZ) 450 Ω @ IZT = 5 mA - determines output voltage variation under load transients in feedback networks.
Reverse Leakage (IR) 2 μA max @ VR = 144 V - ensures minimal parasitic current in high-impedance sensing paths.
Temp. Coefficient (αVZ) +0.110 %/°C - quantifies voltage drift per degree Celsius for thermal error budgeting in precision systems.
Max. Surge Current (IZSM) 1.2 A @ 8.3 ms square wave - withstands transient overvoltage events without degradation.
Operating Temperature –65 °C to +175 °C - supports deployment in space-grade and downhole electronics without derating.

Pinout & Package

Package: Hermetically sealed voidless hard glass case with tungsten slugs; end caps are copper with Sn/Pb finish; polarity indicated by cathode band; "E" package (also known as "D-5B").

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal / low-side connection Connected to circuit ground or lower potential node during normal Zener operation.
Cathode Reverse-biased breakdown terminal / high-side connection Connected to regulated voltage rail; marked by visible band on glass body.

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates moisture ingress and internal delamination risk over 20+ year field life in harsh environments.
Category III metallurgical bond Ensures mechanical integrity under shock/vibration up to 100 g and thermal cycling beyond 1000 cycles.
MIL-PRF-19500/356 qualification Validated for JAN, JANTX, JANTXV, and JANS screening levels - required for defense and space programs.
Nonsensitive to ESD Withstands >4 kV HBM per MIL-STD-750 Method 1020 - no external protection needed in assembly handling.
Inherent radiation hardness Qualified to 100 krad(Si) TID per MicroNote 050 - suitable for low-earth orbit satellite power subsystems.

Applications

Aerospace Power Conditioning Downhole Instrumentation Bias

Use Scenario: Regulating auxiliary supply rails in satellite DC-DC converters exposed to thermal vacuum and radiation.

IC Role / Device Role / Timing Role: Zener voltage reference and overvoltage clamp in isolated feedback loops.

Use Value: Maintains 180 V reference stability within ±0.11%/°C drift and survives 100 krad(Si) total ionizing dose.

Use Scenario: Providing stable bias voltage for sensor front-ends in oil/gas well logging tools operating at 175 °C.

IC Role / Device Role / Timing Role: High-temperature voltage reference in analog signal chains.

Use Value: Operates continuously from –65 °C to +175 °C with <2 μA leakage at 144 V, ensuring measurement accuracy.

Military Radar HV Supplies Nuclear Monitoring Systems

Use Scenario: Clamping transient spikes on pulse modulator rails in ground-based radar transmitters.

IC Role / Device Role / Timing Role: Surge-absorbing Zener limiter in high-power RF amplifier bias networks.

Use Value: Withstands 1.2 A non-repetitive surge (8.3 ms) without parameter shift or bond failure.

Use Scenario: Stabilizing detector bias in radiation-hardened nuclear instrumentation deployed in reactor containment zones.

IC Role / Device Role / Timing Role: Radiation-tolerant voltage reference in safety-critical monitoring circuits.

Use Value: Inherently hardened to 100 krad(Si); no additional shielding or derating required for long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4988US Same electrical specs and package; differs only in tape-and-reel packaging (TR suffix denotes reel format). No functional difference - identical use in automated SMT assembly lines. Select 1N4988US/TR when ordering for pick-and-place production; 1N4988US for sample evaluation or manual soldering.
1N4987US/TR 160 V nominal Zener voltage (vs. 180 V), same 5 W rating, 350 Ω ZZ, and –65 °C to +175 °C range. Suitable where lower clamping threshold is acceptable, e.g., intermediate-stage regulation before final 180 V rail. Choose 1N4987US/TR if system margin allows 20 V lower regulation; retains identical thermal and radiation performance.

Compared with 1N4988US/TR, 1N4987US/TR offers 20 V lower regulation with identical ruggedness and temperature range, while 1N4988US shares all electrical and mechanical properties but omits tape-and-reel packaging - making TR the default for volume SMT deployment.

Availability

1N4988US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, downhole instrumentation bias, and military radar HV supplies requiring stable component supply with full traceability and long-lifecycle support.

Supply support for 1N4988US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified components.

The 1N49xxUS series belongs to Microsemi's legacy high-power Zener family designed specifically for MIL-PRF-19500/356-compliant applications demanding extreme environmental resilience and long-term parametric stability.

FAQ

What is the Zener voltage tolerance for 1N4988US/TR?

The 1N4988US/TR has a nominal Zener voltage of 180 V with a standard tolerance of ±5%, as specified in the Microsemi SD44A datasheet. No suffix indicates this standard tolerance; tighter tolerances (e.g., ±2% or ±1%) require C or D suffixes not present in this part number. This tolerance directly impacts regulation accuracy in high-voltage reference circuits.

Does 1N4988US/TR require derating above 125 °C?

Yes - the 1N4988US/TR is rated for 5 W power dissipation only at TEC = 125 °C. Above that temperature, power must be linearly derated to zero at +175 °C, yielding a derating factor of 100 mW/°C. This is critical for thermal design in sealed enclosures or high-ambient environments like downhole tools.

Is 1N4988US/TR compatible with lead-free reflow processes?

No - the 1N4988US/TR features copper end caps with Sn/Pb (tin/lead) finish, making it incompatible with Pb-free reflow profiles. It is intended for SnPb soldering processes per J-STD-020. For RoHS-compliant alternatives, consult Microchip's current-generation Zener offerings, as this part remains designated for legacy high-reliability programs.

What is the maximum reverse leakage current for 1N4988US/TR?

The maximum reverse leakage current for 1N4988US/TR is 2 μA at VR = 144 V and TA = 25 °C, per the SD44A datasheet. This low leakage ensures minimal loading on high-impedance bias networks and preserves accuracy in precision voltage references used in sensor interfaces and telemetry systems.

How is polarity identified on the 1N4988US/TR glass body?

Polarity on the 1N4988US/TR is indicated by a visible cathode band on the glass envelope - the banded end is the cathode, and the unmarked end is the anode. This marking is consistent across the 1N49xxUS series and aligns with JEDEC-standard Zener diode orientation for surface-mount placement verification.

1N4988US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
180 V
Tolerance:
±5%
Power - Max:
5 W
Impedance (Max) (Zzt):
450 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 136.8 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

1N4988US/TR FAQ

1.How can I place an order for 1N4988US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N4988US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N4988US/TR reliable?

The price and inventory of 1N4988US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4988US/TR is usually 5 days.

3.What payment methods are accepted for 1N4988US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4988US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N4988US/TR?

1N4988US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N4988US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N4988US/TR?

For technical support, including 1N4988US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4988US/TR requirements.

6.How does Aetrix verify that 1N4988US/TR is sourced from the original manufacturer or authorized distributors?

All 1N4988US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4988US/TR meets industry standards.

7.What is the process for return or replacement of 1N4988US/TR?

All 1N4988US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4988US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N4988US/TR part is unused and in its original packaging.

Return procedure for 1N4988US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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