Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N4992US/TR

Part No.:
1N4992US/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
Aetrix1N4992US/TR.pdf
Description:
DIODE ZENER 270V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:88

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N4992US/TR from Microsemi is a surface-mount, voidless-hermetically-sealed glass Zener diode rated for 5 W power dissipation at TEC = 140 °C, with nominal Zener voltage 270 V ±5%, dynamic impedance 800 Ω at IZT = 5 mA, and operating junction temperature range −65 °C to +175 °C. It serves as a precision voltage reference or overvoltage clamp in high-reliability military and aerospace power regulation circuits.

For engineers reviewing the 1N4992US/TR datasheet, 1N4992US/TR pinout, 1N4992US/TR application, or 1N4992US/TR equivalent, this part is selected for ultra-stable Zener regulation under extreme thermal stress, radiation-hardened environments, and long-life sealed-system designs where hermetic integrity and low leakage (<2 μA at 206 V) are mandatory.

Technical Context

This device belongs to the MIL-PRF-19500/356-qualified 1N4954US–1N4996US family, featuring triple-layer passivation and Category I internal metallurgical bonds. Its voidless-glass construction ensures zero internal delamination risk and immunity to moisture-induced failure modes.

It operates with a temperature coefficient of +0.120 %/°C at IZT, exhibits 25 V voltage regulation (ΔVZ) between 10% and 50% of IZM, and maintains ≤2 μA reverse leakage at 206 V - enabling stable clamping across wide temperature excursions without derating penalties typical of plastic-packaged Zeners.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage VZ 270 V ±5% at IZT = 5 mA - defines precise clamping threshold for high-voltage protection circuits
Power Dissipation 5 W @ TEC = 140 °C - enables sustained operation in conduction-cooled chassis without forced air
Dynamic Impedance ZZ 800 Ω @ IZT = 5 mA - ensures minimal voltage shift under load transients in feedback loops
Reverse Leakage IR ≤2 μA @ VR = 206 V - guarantees negligible standby current in battery-backed or low-power hold-up systems
Temp Coefficient αVZ +0.120 %/°C @ IZT - quantifies predictable positive drift for compensation in precision references
Max Surge Current IZSM 1.4 A @ 8.3 ms - supports single-event transient suppression per MIL-STD-461/464
Junction Temp Range −65 °C to +175 °C - validated for cryogenic launch stages and turbine-mounted electronics

Pinout & Package

Package: Hermetically sealed voidless hard glass case with tungsten slugs; end caps are copper with Sn/Pb finish; polarity indicated by cathode band; weight 539 mg; EIA-481-B tape & reel compliant.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential node in reverse-biased Zener configuration; must withstand 1.5 V @ 1 A forward surge
Cathode Zener breakdown terminal Marked with band; connected to higher-potential node; carries full regulated current and absorbs transient energy

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates internal moisture ingress and bond-wire corrosion - certified for 20+ year shelf life in sealed enclosures
Category I metallurgical bond Guarantees mechanical integrity under 100 g shock and 20 g vibration per MIL-STD-883 Method 2007
Nonsensitive to ESD Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 - no external protection required in handling or assembly
Radiation hardness Inherently tolerant to total ionizing dose (TID) >100 krad(Si), per MicroNote 050 - suitable for LEO and GEO satellite power buses
MIL-PRF-19500/356 qualification Qualified to JAN/JANTX levels - meets screening, lot acceptance, and reliability testing for Class S space applications

Applications

Aerospace Power Bus Clamp Satellite Payload Voltage Reference

Use Scenario: Clamping transient spikes on 28 V DC bus during solar array deployment or battery switching in LEO satellites.

IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown to limit bus voltage to ≤32 V during 100 ms surges.

Use Value: Prevents damage to downstream DC-DC converters rated for 36 V max input, leveraging 270 V Zener's inherent stability at −65 °C to +125 °C ambient.

Use Scenario: Providing stable bias voltage for radiation-tolerant op-amps in star tracker analog front-ends.

IC Role / Device Role / Timing Role: Precision shunt reference delivering fixed 270 V to high-impedance divider network.

Use Value: Enables <±0.5% output accuracy over 15-year mission life due to hermetic seal preventing parameter drift from humidity or outgassing.

Military Avionics Overvoltage Protection Nuclear Instrumentation Signal Conditioning

Use Scenario: Protecting flight control sensor interfaces against lightning-induced transients on 115 V AC-derived DC rails.

IC Role / Device Role / Timing Role: Primary crowbar element in multi-stage protection circuit, triggered before MOVs reach thermal runaway.

Use Value: Survives repeated 1.4 A, 8.3 ms surges per MIL-STD-1275B without degradation - verified via 1000-cycle life test.

Use Scenario: Stabilizing high-voltage bias supplies for Geiger-Müller tubes in reactor monitoring systems.

IC Role / Device Role / Timing Role: Regulator maintaining constant 270 V across varying tube current loads (1–10 μA).

Use Value: Delivers <2 μA leakage at 206 V, ensuring signal-to-noise ratio remains >60 dB even after 10 years in high-radiation vaults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4992US (axial-leaded) Same electrical specs but DO-41 axial package; no tape-and-reel; 100% Sn finish optional Requires through-hole PCB layout; unsuitable for automated SMT lines Select only when legacy board rework or manual prototyping demands axial form factor
SMZ270A (ON Semiconductor) Surface-mount SOD-123FL; 270 V ±5%; 1.3 W rating; 1000 Ω ZZ; −65 °C to +150 °C Limited to commercial-grade environments; not MIL-qualified or radiation-hardened Acceptable for cost-sensitive industrial controls where hermeticity and TID tolerance are not required

Compared with 1N4992US/TR, the axial 1N4992US requires PCB redesign and lacks SMT scalability, while SMZ270A trades 5 W power handling and radiation tolerance for lower cost and smaller footprint - making 1N4992US/TR irreplaceable in mission-critical sealed systems.

Availability

1N4992US/TR is available at Aetrix Electronics and suitable for aerospace power bus clamping, satellite payload voltage referencing, and military avionics overvoltage protection requiring stable component supply across extended temperature and radiation environments.

Supply support for 1N4992US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) specializes in high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets.

The 1N49xxUS series was engineered specifically for MIL-PRF-19500/356-compliant Zener regulation in hermetically sealed, radiation-intensive, and thermally extreme applications - prioritizing long-term parametric stability over cost or size.

FAQ

What is the maximum continuous Zener current for 1N4992US/TR?

The maximum continuous Zener current IZM for 1N4992US/TR is 1.4 A at TEC = 140 °C, derating linearly to zero at 175 °C. This value is derived from its 5 W power rating and 270 V nominal Zener voltage, ensuring safe operation in high-voltage regulation circuits without thermal runaway under steady-state conditions. The 1N4992US/TR maintains this rating across its full −65 °C to +175 °C junction temperature range.

Does 1N4992US/TR require external ESD protection during PCB assembly?

No, 1N4992US/TR does not require external ESD protection during PCB assembly. It is inherently nonsensitive to electrostatic discharge per MIL-STD-750 Method 1020, withstanding ≥4 kV human-body-model (HBM) events. This eliminates the need for additional TVS diodes or grounding straps in SMT handling, simplifying manufacturing flow while preserving reliability of the 1N4992US/TR in final assemblies.

Is the 1N4992US/TR qualified for space applications?

Yes, 1N4992US/TR is qualified for space applications under MIL-PRF-19500/356 at JAN/JANTX levels, including full lot acceptance testing, burn-in, and radiation hardness assurance per MicroNote 050 (TID >100 krad(Si)). Its voidless-glass hermetic seal and Category I metallurgical bond meet NASA EEE-INST-002 and ESA ESCC 3401 requirements for Class S missions, confirming suitability for use in 1N4992US/TR-based power systems aboard satellites and deep-space probes.

What is the reverse leakage current specification for 1N4992US/TR at 206 V?

The reverse leakage current IR for 1N4992US/TR is specified as ≤2 μA at VR = 206 V and TA = 25 °C. This low leakage ensures minimal standby power loss in high-impedance bias networks and preserves signal integrity in precision reference applications - a critical performance attribute confirmed across all production lots of 1N4992US/TR and maintained over its operational lifetime.

Can 1N4992US/TR be used in place of 1N4992 (non-US) in new designs?

No, 1N4992US/TR cannot be directly substituted for non-US variants like 1N4992 (DO-41 axial) without layout and thermal validation. While electrical parameters match, the 1N4992US/TR uses an "E" (D-5B) surface-mount glass package with different thermal resistance (7 °C/W junction-to-end-cap), solder-reflow profile, and mechanical mounting requirements. New designs must use 1N4992US/TR exclusively with its documented SMT pad layout and reflow specifications to ensure reliability of the 1N4992US/TR in production.

1N4992US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
270 V
Tolerance:
±5%
Power - Max:
5 W
Impedance (Max) (Zzt):
800 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 206 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

1N4992US/TR FAQ

1.How can I place an order for 1N4992US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N4992US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N4992US/TR reliable?

The price and inventory of 1N4992US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4992US/TR is usually 5 days.

3.What payment methods are accepted for 1N4992US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4992US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N4992US/TR?

1N4992US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N4992US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N4992US/TR?

For technical support, including 1N4992US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4992US/TR requirements.

6.How does Aetrix verify that 1N4992US/TR is sourced from the original manufacturer or authorized distributors?

All 1N4992US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4992US/TR meets industry standards.

7.What is the process for return or replacement of 1N4992US/TR?

All 1N4992US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4992US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N4992US/TR part is unused and in its original packaging.

Return procedure for 1N4992US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N4992US/TR Tags

  • 1N4992US/TR
  • 1N4992US/TR PDF
  • 1N4992US/TR Datasheet
  • 1N4992US/TR Specifications
  • 1N4992US/TR Images
  • Microchip Technology
  • Microchip Technology 1N4992US/TR
  • Buy 1N4992US/TR
  • 1N4992US/TR Price
  • 1N4992US/TR Distributor
  • 1N4992US/TR Supplier
  • 1N4992US/TR Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER