My Inquiry
My Account
Microchip Technology 1N5223BUR-1/TR
- Part No.:
- 1N5223BUR-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AA
- Datasheet:
-
1N5223BUR-1/TR.pdf
- Description:
- DIODE ZENER 2.7V 500MW DO213AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,260
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N5223BUR-1/TR from Microsemi is a surface-mount 2.7 V, 5% tolerance Zener diode in DO-213AA (SOD80) MELF package, rated for 500 mW steady-state power dissipation, 20 mA test current, and -65 °C to +175 °C junction temperature range. It delivers stable voltage regulation in low-power analog references and biasing circuits.
For engineers reviewing the 1N5223BUR-1/TR datasheet, 1N5223BUR-1/TR pinout, 1N5223BUR-1/TR application, or 1N5223BUR-1/TR equivalent, key selection criteria include Zener voltage accuracy (±5%), dynamic impedance (30 Ω @ 20 mA), reverse leakage (75 µA @ 0.95 V), temperature coefficient (-0.080 %/°C), and hermetically sealed glass packaging for reliability in harsh environments.
Technical Context
This device operates as a two-terminal voltage reference by exploiting controlled reverse breakdown in a silicon PN junction. Its metallurgically bonded construction ensures mechanical robustness and thermal stability, with junction-to-ambient thermal resistance of 250 °C/W on FR4 board.
Regulation occurs at nominal 2.7 V with 20 mA test current (IZT); knee current (IZK) is 0.25 mA. Dynamic impedance is specified at both IZT (30 Ω) and IZK (1300 Ω), enabling accurate modeling across operating ranges from low-current sensing to moderate-power shunt regulation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 2.7 V ±5% at 20 mA - defines precise shunt regulation point for low-voltage reference designs |
| Power Dissipation (PD) | 0.5 W maximum - limits continuous shunt current to ~185 mA at 2.7 V without derating |
| Dynamic Impedance (ZZT) | 30 Ω @ 20 mA - determines output voltage variation under load changes in feedback or bias networks |
| Reverse Leakage (IR) | 75 µA @ 0.95 V - ensures minimal error contribution in high-impedance voltage divider or sensor bias applications |
| Temp. Coefficient (αVZ) | -0.080 %/°C - quantifies drift magnitude; enables compensation in precision analog circuits over -65 °C to +175 °C |
| Junction Temperature Range | -65 °C to +175 °C - supports operation in automotive under-hood, industrial control, and aerospace environments |
| Forward Voltage (VF) | 1.1 V max @ 200 mA - confirms standard silicon diode forward conduction behavior for polarity verification |
Pinout & Package
DO-213AA (SOD80 or MLL34) metallurgically bonded glass MELF package with cathode band marking. Hermetically sealed, RoHS-compliant (e3) end-cap plating. Weight: 0.04 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Zener regulation terminal | Connected to higher potential during regulation; band identifies polarity for correct orientation in PCB layout |
| Anode (unbanded end) | Reference/return terminal | Connected to circuit ground or lower potential node; completes reverse-biased path for Zener operation |
Key Features
| Feature | Design Value |
|---|---|
| Hermetically sealed glass package | Prevents moisture ingress and long-term parameter drift-critical for mission-critical analog references |
| Metallurgical bond construction | Enhances thermal cycling endurance and mechanical shock resistance vs. epoxy-packaged alternatives |
| Minimal capacitance | Typical <1.5 pF (per Figure 3) - preserves high-frequency signal integrity in RF bias and timing circuits |
| Radiation hardness | Inherently radiation-hard per MicroNote 050 - validated for space-grade and nuclear instrumentation use |
| ESD insensitivity | Non-sensitive per MIL-STD-750 Method 1020 - eliminates need for external ESD protection in handling and assembly |
Applications
| Low-Voltage Reference Supply | Microcontroller Reset Circuit |
|---|---|
Use Scenario: Generating a stable 2.7 V reference for ADC voltage scaling or op-amp biasing in battery-powered IoT sensors. IC Role / Device Role: Shunt voltage regulator providing fixed reference node independent of supply variation. Use Value: Tight 5% tolerance and low 30 Ω dynamic impedance ensure reference stability within ±0.14 V across 5–20 mA load range. | Use Scenario: Driving reset input of 2.7 V–3.3 V microcontrollers where brown-out detection requires precise threshold. IC Role / Device Role: Zener clamp establishing reliable reset assertion level during power-up/down transitions. Use Value: -0.080 %/°C tempco and 75 µA leakage at 0.95 V prevent false resets across industrial temperature range. |
| RF Amplifier Bias Network | Industrial Sensor Signal Conditioning |
Use Scenario: Providing DC bias voltage to gate of GaAs FETs in low-noise RF front-end stages. IC Role / Device Role: Low-capacitance (<1.5 pF) shunt regulator minimizing RF signal loading and phase distortion. Use Value: Minimal parasitic capacitance preserves amplifier gain flatness up to UHF frequencies without added decoupling complexity. | Use Scenario: Stabilizing excitation voltage for resistive bridge sensors (e.g., strain gauges) in factory automation systems. IC Role / Device Role: Precision voltage source maintaining constant bridge drive despite 12–24 V rail fluctuations. Use Value: 0.5 W rating and -65 °C to +175 °C operation enable direct mounting near hot industrial transducers without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5223B-1 | Same electrical specs but DO-35 (axial-leaded) package; no tape-and-reel option | Requires through-hole PCB assembly; unsuitable for automated SMT lines | Select when legacy through-hole design or manual prototyping is required |
| BZX55C2V7 | 2.7 V ±5%, 500 mW, but plastic DO-35 package; higher leakage (100 µA @ 1 V); no radiation hardness claim | Limited to commercial temperature range (-65 °C to +150 °C); not MIL-PRF-19500 up-screenable | Select for cost-sensitive consumer applications where hermeticity and radiation tolerance are unnecessary |
Compared with 1N5223B-1 and BZX55C2V7, the 1N5223BUR-1/TR offers SMT compatibility, tape-and-reel delivery, hermetic reliability, and extended high-temperature operation-making it optimal for automated production of ruggedized industrial and aerospace electronics.
Availability
1N5223BUR-1/TR is available at Aetrix Electronics and suitable for low-voltage reference supplies, microcontroller reset circuits, RF amplifier bias networks, and industrial sensor signal conditioning requiring stable component supply across extended temperature and reliability requirements.
Supply support for 1N5223BUR-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a semiconductor company specializing in high-reliability analog, mixed-signal, and RF solutions for aerospace, defense, and industrial markets.
The 1N5223BUR-1/TR belongs to Microsemi's legacy Zener regulator family designed for precision voltage reference and shunt regulation in mission-critical systems demanding hermetic packaging, radiation tolerance, and wide-temperature operation.
FAQ
What is the Zener voltage tolerance for 1N5223BUR-1/TR?
The 1N5223BUR-1/TR has a nominal Zener voltage of 2.7 V with a ±5% tolerance, indicated by the "B" suffix in its part number per Microsemi's nomenclature. This means the actual measured VZ at 20 mA test current falls between 2.565 V and 2.835 V at 25 °C. The tolerance remains valid across the full -65 °C to +175 °C operating junction temperature range as defined in the T4-LDS-0232-1 datasheet.
Does 1N5223BUR-1/TR support automated SMT assembly?
Yes, the 1N5223BUR-1/TR is supplied in EIA-481-B compliant tape-and-reel format (denoted by the "TR" suffix), making it fully compatible with pick-and-place equipment. Its DO-213AA (SOD80) MELF package has standardized dimensions (A = 1.60–1.70 mm, B = 3.30–3.70 mm) and tin-lead or RoHS-compliant matte-tin end-cap plating that meets MIL-STD-750 Method 2026 solderability requirements.
What is the maximum reverse leakage current for 1N5223BUR-1/TR?
The maximum reverse leakage current (IR) for 1N5223BUR-1/TR is 75 µA at VR = 0.95 V, as specified in the Electrical Characteristics table on page 3 of the T4-LDS-0232-1 datasheet. This value is measured at 25 °C and reflects worst-case leakage under sub-breakdown conditions-critical for high-impedance bias networks where leakage could shift operating points.
Is 1N5223BUR-1/TR suitable for high-temperature environments?
Yes, the 1N5223BUR-1/TR is rated for junction and storage temperatures from -65 °C to +175 °C. Its metallurgically bonded glass construction and hermetic sealing enable reliable operation in under-hood automotive, downhole oil/gas, and industrial motor control applications. Derating begins above 50 °C ambient (or 125 °C end-cap temperature) per the power derating curve in Figure 2.
How does the temperature coefficient affect 1N5223BUR-1/TR performance?
The 1N5223BUR-1/TR has a temperature coefficient (αVZ) of -0.080 %/°C, meaning its Zener voltage decreases by approximately 2.16 mV per °C rise from 25 °C. This predictable drift allows designers to compensate in precision references-for example, pairing with a positive-tempco component-or accept ±0.22 V variation over a 100 °C span (e.g., -40 °C to +60 °C ambient).
1N5223BUR-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 2.7 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 30 Ohms
- Current - Reverse Leakage @ Vr:
- 75 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AA
1N5223BUR-1/TR FAQ
1.How can I place an order for 1N5223BUR-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5223BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5223BUR-1/TR reliable?
The price and inventory of 1N5223BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5223BUR-1/TR is usually 5 days.
3.What payment methods are accepted for 1N5223BUR-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5223BUR-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5223BUR-1/TR?
1N5223BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5223BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5223BUR-1/TR?
For technical support, including 1N5223BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5223BUR-1/TR requirements.
6.How does Aetrix verify that 1N5223BUR-1/TR is sourced from the original manufacturer or authorized distributors?
All 1N5223BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5223BUR-1/TR meets industry standards.
7.What is the process for return or replacement of 1N5223BUR-1/TR?
All 1N5223BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5223BUR-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5223BUR-1/TR part is unused and in its original packaging.
Return procedure for 1N5223BUR-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5223BUR-1/TR Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
