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Microchip Technology 1N5225BUR-1

Part No.:
1N5225BUR-1
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-213AA
Datasheet:
Aetrix1N5225BUR-1.pdf
Description:
DIODE ZENER 3V 500MW DO213AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,974

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Product details

Overview

1N5225BUR-1 from Microsemi is a 3.0 V, 5% tolerance, 500 mW surface-mount Zener diode in DO-213AA (SOD80) MELF package, designed for precision voltage regulation in low-power analog circuits, reference supplies, and overvoltage protection. It delivers stable regulation at 20 mA test current with 29 Ω dynamic impedance and -0.075 %/°C temperature coefficient.

For engineers reviewing the 1N5225BUR-1 datasheet, 1N5225BUR-1 pinout, 1N5225BUR-1 application, or 1N5225BUR-1 equivalent, key selection factors include its hermetically sealed glass construction, minimal 50 µA reverse leakage at 0.95 V, radiation-hardened design per MicroNote 050, and compatibility with automated SMT assembly under 260 °C solder profiles.

Technical Context

This Zener operates in reverse breakdown to maintain a stable 3.0 V reference across 0.25–20 mA regulation current, with dynamic impedance measured at 29 Ω @ 20 mA and 1600 Ω near the knee (IZK = 0.25 mA). Its metallurgically bonded glass structure ensures long-term stability and low capacitance (<2 pF typical).

The device exhibits a negative temperature coefficient of -0.075 %/°C, making it suitable for temperature-compensated references when paired with positive-TC components. It meets MIL-PRF-19500 screening options and is RoHS-compliant in commercial grade.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage VZ3.0 V ±5% at IZT = 20 mA - precise low-voltage reference for biasing and regulation
Power Dissipation PD0.5 W - supports continuous operation up to 20 mA at 3.0 V without derating below 50 °C ambient
Zener Impedance ZZT29 Ω @ 20 mA - low AC impedance ensures minimal output voltage variation under load transients
Reverse Leakage IR50 µA @ VR = 0.95 V - enables reliable blocking in low-current standby modes
Temp. Coefficient αVZ-0.075 %/°C - predictable drift behavior for thermal compensation design
Forward Voltage VF1.1 V max @ 200 mA - supports use as clamp or rectifier in dual-role circuits
Junction Temp. Range-65 to +175 °C - qualified for extended industrial and aerospace environments

Pinout & Package

DO-213AA (SOD80 or MLL34) MELF glass package: hermetically sealed, metallurgically bonded, cathode band marked on one end cap. Terminals are solderable tin-lead or RoHS-compliant matte-tin plating.

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Regulated output nodeConnected to higher potential during Zener operation; defines polarity for voltage reference
Anode (unbanded end)Reference ground/reference returnCommon return path for regulation current; must be held at lower potential than cathode

Key Features

FeatureDesign Value
Hermetic glass MELF constructionEliminates moisture ingress and long-term parameter drift in humid or high-reliability environments
Metallurgical bondingEnsures robust thermal and mechanical interface between silicon die and end caps for stable power handling
Radiation hardnessInherently radiation-hard per Microsemi MicroNote 050 - suitable for space-qualified and nuclear instrumentation
Low capacitanceTypical <2 pF - preserves high-frequency signal integrity in RF bias and timing circuits
ESD insensitivityNon-sensitive per MIL-STD-750 Method 1020 - simplifies handling and eliminates ESD protection circuitry

Applications

Low-Voltage Reference SupplyOvervoltage Clamp for MCU I/O

Use Scenario: Providing stable 3.0 V bias for op-amp input stages and ADC reference inputs in battery-powered sensors.

IC Role / Device Role / Timing Role: Precision shunt voltage reference regulating supply rail against load and temperature variation.

Use Value: Maintains 3.0 V ±5% over -65 to +175 °C and 0.25–20 mA, enabling accurate analog measurements without trimming.

Use Scenario: Protecting 3.3 V logic pins of microcontrollers from transient surges exceeding 3.6 V.

IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting voltage excursion during ESD or inductive kick events.

Use Value: Responds within nanoseconds with 50 µA leakage at 0.95 V, minimizing standby power loss while clamping at 3.0 V ±5%.

Temperature-Compensated Bias NetworkAerospace Power Monitor Reference

Use Scenario: Paired with a positive-TC resistor or diode to generate a near-zero-TC reference voltage in avionics power modules.

IC Role / Device Role / Timing Role: Negative-TC (-0.075 %/°C) Zener element in composite reference topology.

Use Value: Enables stable 3.0 V reference across -55 to +125 °C operating range without active compensation circuitry.

Use Scenario: Serving as primary voltage reference in radiation-tolerant DC-DC converter feedback loops aboard satellites.

IC Role / Device Role / Timing Role: Radiation-hardened shunt regulator establishing feedback setpoint for isolated power control.

Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding or redundancy, reducing SWaP-C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N5225BSame 3.0 V, 5% tolerance, but in axial DO-35 (DO-204AH) package - no surface-mount capabilityRequires through-hole PCB layout and manual or wave-solder assemblySelect 1N5225B only if legacy board design mandates axial leaded components or hand-solder prototyping
BZX55C3V03.0 V, 5% tolerance, DO-35 package, 500 mW rating - higher ZZT (30 Ω vs. 29 Ω), no radiation hardness claimLacks MIL-PRF-19500 screening and inherent radiation tolerance per MicroNote 050Choose BZX55C3V0 for cost-sensitive commercial applications where radiation performance and hermetic sealing are not required

Compared with 1N5225B and BZX55C3V0, the 1N5225BUR-1 uniquely combines SMT-compatible DO-213AA packaging, hermetic glass sealing, and documented radiation hardness - critical for aerospace, defense, and high-reliability industrial systems where long-term parametric stability and environmental resilience are mandatory.

Availability

1N5225BUR-1 is available at Aetrix Electronics and suitable for low-power voltage reference, overvoltage protection, and radiation-tolerant power monitoring requiring stable component supply across aerospace, medical instrumentation, and industrial control programs.

Supply support for 1N5225BUR-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal ICs and discrete devices.

The 1N52xxBUR-1 series belongs to Microsemi's precision Zener voltage regulator product line, engineered for applications demanding hermetic reliability, wide temperature operation, and immunity to harsh environments including space, defense, and nuclear systems.

FAQ

What is the Zener voltage tolerance and test current for the 1N5225BUR-1?

The 1N5225BUR-1 has a nominal Zener voltage of 3.0 V with a ±5% tolerance, verified at a test current (IZT) of 20 mA. This tolerance corresponds to the "B" suffix in the part nomenclature and is guaranteed across the full operating temperature range of -65 to +175 °C.

Does the 1N5225BUR-1 have radiation-hardened characteristics?

Yes, the 1N5225BUR-1 is inherently radiation-hardened per Microsemi MicroNote 050. This property arises from its metallurgically bonded glass construction and is documented in the official datasheet - no additional qualification testing is required to leverage this feature in radiation-exposed environments.

What is the maximum reverse leakage current for the 1N5225BUR-1, and at what voltage is it specified?

The 1N5225BUR-1 exhibits a maximum reverse leakage current (IR) of 50 µA, measured at a reverse voltage (VR) of 0.95 V. This low leakage supports energy-efficient operation in battery-powered and always-on monitoring circuits.

Can the 1N5225BUR-1 be used in reflow soldering processes?

Yes, the 1N5225BUR-1 supports standard SMT reflow profiles with a maximum solder temperature (TSP) of 260 °C for 10 seconds. Its DO-213AA glass package and tin-lead or RoHS-compliant matte-tin terminations are qualified per MIL-STD-750 Method 2026.

What is the temperature coefficient of the 1N5225BUR-1, and how does it affect circuit design?

The 1N5225BUR-1 has a temperature coefficient (αVZ) of -0.075 %/°C, meaning its Zener voltage decreases by approximately 2.25 mV per °C rise. This predictable negative drift enables intentional pairing with positive-TC components to achieve near-zero-TC reference networks in precision analog designs.

1N5225BUR-1 Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-213AA
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
3 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
29 Ohms
Current - Reverse Leakage @ Vr:
50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-213AA

1N5225BUR-1 FAQ

1.How can I place an order for 1N5225BUR-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5225BUR-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5225BUR-1 reliable?

The price and inventory of 1N5225BUR-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5225BUR-1 is usually 5 days.

3.What payment methods are accepted for 1N5225BUR-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5225BUR-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5225BUR-1?

1N5225BUR-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5225BUR-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5225BUR-1?

For technical support, including 1N5225BUR-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5225BUR-1 requirements.

6.How does Aetrix verify that 1N5225BUR-1 is sourced from the original manufacturer or authorized distributors?

All 1N5225BUR-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5225BUR-1 meets industry standards.

7.What is the process for return or replacement of 1N5225BUR-1?

All 1N5225BUR-1 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5225BUR-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5225BUR-1 part is unused and in its original packaging.

Return procedure for 1N5225BUR-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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