Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 1N5226B_T50R

Part No.:
1N5226B_T50R
Manufacturer:
onsemi
Category:
Single Zener Diodes
Package:
DO-204AH, DO-35, Axial
Datasheet:
Aetrix1N5226B_T50R.pdf
Description:
DIODE ZENER 3.3V 500MW DO35
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,339

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N5226B_T50R from ON Semiconductor is a 3.3 V ±5% silicon Zener diode in DO-35 glass package, rated for 500 mW power dissipation and 20 mA test current, with 28 Ω dynamic impedance and -0.07 %/°C temperature coefficient - used for precision voltage reference and low-power regulation in analog sensor signal conditioning circuits.

For engineers reviewing the 1N5226B_T50R datasheet, pinout, applications, or equivalent options, key selection considerations include Zener voltage tolerance, thermal coefficient, dynamic impedance at IZ = 20 mA, maximum reverse leakage at VR = 1.0 V, and DO-35 mechanical compatibility with through-hole PCB layouts.

Technical Context

This device operates as a two-terminal voltage-reference element, maintaining stable reverse-biased conduction above its nominal Zener breakdown voltage (3.3 V) with tight 5% tolerance and low TC of -0.07 %/°C. It exhibits 28 Ω dynamic impedance at 20 mA and 1.6 kΩ knee impedance at 0.25 mA, enabling predictable clamping in low-current bias networks.

The DO-35 hermetically sealed glass package ensures long-term stability and moisture resistance, supporting operation across -65 °C to +200 °C junction temperature range. Its 500 mW power rating and 4.0 mW/°C derating above 50 °C define safe continuous dissipation limits under thermal constraint.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 3.3 V nominal, min 3.135 V / max 3.465 V at IZ = 20 mA - defines precise clamping threshold for reference or protection circuits.
Power Dissipation (PD) 500 mW at TA = 25 °C - sets maximum steady-state power handling without heatsinking.
Dynamic Impedance (ZZ) 28 Ω at IZ = 20 mA - determines voltage regulation stiffness under load variation.
Temperature Coefficient (TC) -0.07 %/°C - quantifies VZ drift per degree Celsius, critical for temperature-stable references.
Reverse Leakage (IR) 25 μA max at VR = 1.0 V - indicates off-state blocking integrity below breakdown.
Package DO-35 glass case with cathode band - enables manual assembly, high-reliability sealing, and JEDEC-standard footprint.

Pinout & Package

DO-35 glass axial package: anode and cathode terminals identified by color band (cathode), no polarity marking on body beyond band. Leads are tinned copper-clad steel, 0.533 mm diameter, 25.4 mm minimum length (T50).

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal / low-side connection Connected to circuit ground or lower potential node in reverse-bias configuration.
Cathode Zener breakdown terminal / high-side connection Connected to regulated voltage node; marked by visible color band on glass body.

Key Features

Feature Design Value
±5% Zener voltage tolerance Enables use in applications requiring tighter regulation than general-purpose Zeners (e.g., sensor excitation references).
-0.07 %/°C temperature coefficient Reduces VZ drift to ~2.3 mV/°C near room temperature, supporting stable references over industrial temperature range.
28 Ω dynamic impedance @ 20 mA Provides low sensitivity to current variation, improving output voltage stability in series-regulator or shunt-bias topologies.
Hermetic DO-35 glass package Ensures long-term parameter stability and immunity to humidity-induced degradation in harsh environments.

Applications

Industrial Sensor Biasing Low-Power Voltage Clamp

Use Scenario: Providing stable excitation voltage to resistive temperature detectors (RTDs) in programmable logic controller (PLC) analog input modules.

IC Role / Device Role / Timing Role: Two-terminal voltage reference establishing fixed 3.3 V bias point for ratiometric measurement.

Use Value: Tight 5% VZ tolerance and low TC ensure <±0.5% total error contribution across -25 °C to +70 °C operating range.

Use Scenario: Protecting microcontroller GPIO pins from transient overvoltage during ESD events in battery-powered IoT edge nodes.

IC Role / Device Role / Timing Role: Shunt clamp limiting input voltage to 3.3 V while diverting surge current to ground.

Use Value: 25 μA leakage at 1.0 V ensures negligible standby current draw; 500 mW rating handles short-duration transients without failure.

Linear Regulator Reference ADC Reference Stabilization

Use Scenario: Setting feedback threshold in discrete 3.3 V linear regulator for FPGA core supply in embedded vision systems.

IC Role / Device Role / Timing Role: Precision Zener reference in op-amp-based shunt regulator topology.

Use Value: 28 Ω ZZ minimizes output voltage shift under load changes, maintaining <10 mV regulation error at 10–20 mA output.

Use Scenario: Stabilizing reference voltage for 12-bit SAR ADC in medical diagnostic equipment front-end.

IC Role / Device Role / Timing Role: Low-drift voltage reference source for ADC VREF input.

Use Value: -0.07 %/°C TC and DO-35 hermeticity reduce reference drift to <0.1 LSB over full operating temperature span.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N5226B-TP (Micro Commercial Components) Same 3.3 V nominal VZ, 5% tolerance, DO-35 package, but specified ZZ = 30 Ω (vs. 28 Ω) and TC = -0.075 %/°C. Identical functional role; slightly higher impedance may increase regulation error under dynamic load. Acceptable where ±0.5 Ω ZZ variation is within system margin; verify thermal drift match in high-precision designs.
BZX55C3V3 (Vishay) 3.3 V nominal, 5% tolerance, DO-35, but ZZ = 90 Ω at 5 mA and TC = -0.05 %/°C; rated for 500 mW same. Higher impedance reduces regulation accuracy at low currents; lower TC improves stability near 25 °C. Preferable only if lower TC outweighs higher ZZ; not recommended for 20 mA bias networks due to degraded regulation.

Compared with 1N5226B_T50R, the 1N5226B-TP offers nearly identical performance with minor ZZ and TC variance, while BZX55C3V3 trades higher dynamic impedance for improved temperature coefficient - making 1N5226B_T50R optimal for applications prioritizing low-impedance regulation at 20 mA.

Availability

1N5226B_T50R is available at Aetrix Electronics and suitable for industrial sensor biasing, low-power voltage clamping, and linear regulator reference applications requiring stable component supply, consistent DO-35 form factor, and traceable ON Semiconductor sourcing.

Supply support for 1N5226B_T50R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 1N5226B_T50R belongs to the legacy 1N52xxB Zener diode family designed for general-purpose voltage regulation and reference in cost-sensitive, reliability-critical applications across industrial and instrumentation systems.

FAQ

What is the Zener voltage tolerance and test condition for 1N5226B_T50R?

The 1N5226B_T50R has a Zener voltage tolerance of ±5%, specified as 3.135 V (min) to 3.465 V (max) at a test current of 20 mA and ambient temperature of 25 °C. This tolerance is guaranteed per ON Semiconductor's 1N5221B–1N5263B datasheet Rev. 3, December 2018, and applies directly to the 1N5226B_T50R variant.

Does 1N5226B_T50R have a specified forward voltage?

Yes - the 1N5226B_T50R has a maximum forward voltage (VF) of 1.2 V at forward current (IF) = 200 mA, as documented in the "Electrical Characteristics" section of the official ON Semiconductor datasheet. This value supports use in dual-role applications requiring both Zener clamping and controlled forward conduction.

What is the maximum reverse leakage current for 1N5226B_T50R and at what voltage is it measured?

The maximum reverse leakage current (IR) for 1N5226B_T50R is 25 μA, measured at reverse voltage (VR) = 1.0 V and ambient temperature of 25 °C. This parameter is confirmed in the "Electrical Characteristics" table of the ON Semiconductor 1N5221B–1N5263B datasheet and reflects off-state blocking capability well below breakdown.

Is the 1N5226B_T50R packaged in a hermetically sealed enclosure?

Yes - the 1N5226B_T50R uses a DO-35 hermetically sealed glass package, as explicitly stated in the "Package Standard Reference" note (JEDEC DO-204, Variation AH) and "General Requirements" section of the ON Semiconductor datasheet. This construction provides moisture resistance and long-term parametric stability.

What is the thermal derating behavior of 1N5226B_T50R above 50 °C ambient?

The 1N5226B_T50R derates at 4.0 mW/°C above 50 °C ambient temperature, reducing its maximum allowable power dissipation from 500 mW at 25 °C to 400 mW at 75 °C. This linear derating curve is defined in the "Absolute Maximum Ratings" table and must be applied in thermal design for sustained operation.

1N5226B_T50R Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
DO-204AH, DO-35, Axial
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Voltage - Zener (Nom) (Vz):
3.3 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
28 Ohms
Current - Reverse Leakage @ Vr:
25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If:
1.2 V @ 200 mA
Operating Temperature:
-65°C ~ 200°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-35

1N5226B_T50R FAQ

1.How can I place an order for 1N5226B_T50R through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5226B_T50R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5226B_T50R reliable?

The price and inventory of 1N5226B_T50R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5226B_T50R is usually 5 days.

3.What payment methods are accepted for 1N5226B_T50R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5226B_T50R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5226B_T50R?

1N5226B_T50R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5226B_T50R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5226B_T50R?

For technical support, including 1N5226B_T50R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5226B_T50R requirements.

6.How does Aetrix verify that 1N5226B_T50R is sourced from the original manufacturer or authorized distributors?

All 1N5226B_T50R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5226B_T50R meets industry standards.

7.What is the process for return or replacement of 1N5226B_T50R?

All 1N5226B_T50R units undergo pre-shipment inspection (PSI). If there is an issue with 1N5226B_T50R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5226B_T50R part is unused and in its original packaging.

Return procedure for 1N5226B_T50R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N5226B_T50R Tags

  • 1N5226B_T50R
  • 1N5226B_T50R PDF
  • 1N5226B_T50R Datasheet
  • 1N5226B_T50R Specifications
  • 1N5226B_T50R Images
  • onsemi
  • onsemi 1N5226B_T50R
  • Buy 1N5226B_T50R
  • 1N5226B_T50R Price
  • 1N5226B_T50R Distributor
  • 1N5226B_T50R Supplier
  • 1N5226B_T50R Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER