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Microchip Technology 1N5226BUR-1
- Part No.:
- 1N5226BUR-1
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AA
- Datasheet:
-
1N5226BUR-1.pdf
- Description:
- DIODE ZENER 3.3V 500MW DO213AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,372
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Product details
Overview
1N5226BUR-1 from Microsemi is a surface-mount 3.3 V, 500 mW Zener diode in DO-213AA (SOD80) MELF package, rated for ±5% voltage tolerance at 20 mA test current, with 28 Ω dynamic impedance and -0.070 %/°C temperature coefficient - used for precision voltage reference and low-power regulation in space-constrained analog circuits.
For engineers reviewing the 1N5226BUR-1 datasheet, 1N5226BUR-1 pinout, 1N5226BUR-1 application, or 1N5226BUR-1 equivalent, this page delivers verified electrical specs, thermal derating behavior, RoHS-compliant packaging details, and direct alternatives for voltage reference design validation and BOM optimization.
Technical Context
This device operates as a reverse-biased silicon Zener diode with metallurgically bonded glass construction, enabling stable breakdown regulation across -65 °C to +175 °C junction temperature range. Its 250 °C/W junction-to-ambient thermal resistance assumes FR4 board mounting with recommended footprint.
The 1N5226BUR-1 exhibits 25 µA max reverse leakage at 0.95 V, 1600 Ω max knee impedance at 0.25 mA, and minimal capacitance per Figure 3 - confirming suitability for low-noise biasing and high-frequency decoupling where parasitic capacitance must remain below 5 pF.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 3.3 V ±5% at 20 mA - defines nominal regulation point for stable reference generation |
| Power Dissipation PD | 0.5 W maximum - limits continuous DC power handling without forced cooling |
| Dynamic Impedance ZZT | 28 Ω at IZT = 20 mA - determines output voltage variation under load current changes |
| Temp. Coefficient αVZ | -0.070 %/°C - indicates negative drift with temperature, critical for thermal stability analysis |
| Reverse Leakage IR | 25 µA max at VR = 0.95 V - sets minimum quiescent current in high-impedance bias networks |
| Junction Temp. Range | -65 °C to +175 °C - supports operation in extended industrial, aerospace, and downhole environments |
| Forward Voltage VF | 1.1 V max at 200 mA - defines forward conduction loss when used bidirectionally or in protection schemes |
Pinout & Package
DO-213AA (SOD80 or MLL34) metallurgically bonded glass MELF package with hermetically sealed end caps; cathode indicated by single band - polarity must be observed during PCB placement to ensure correct Zener regulation (banded end positive relative to opposite end).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Zener anode connection in reverse-bias configuration | Must be connected to higher potential node for regulation; incorrect orientation prevents breakdown |
| Anode (unbanded end) | Zener cathode connection in reverse-bias configuration | Connected to lower potential or ground reference; forms regulated output node at cathode |
Key Features
| Feature | Design Value |
|---|---|
| Surface-mount JEDEC-compatible Zener | Direct replacement for through-hole 1N5226B-1 in automated assembly, eliminating axial-leaded rework |
| Hermetic glass MELF construction | Prevents moisture ingress and long-term parameter drift in humid or corrosive environments |
| MIL-PRF-19500 up-screening option | Enables qualification for military/aerospace applications requiring enhanced reliability screening |
| RoHS-compliant plating (e3 suffix) | Tin-lead or matte-tin end-cap plating compliant with EU Directive 2011/65/EU for commercial-grade units |
| Low capacitance (<5 pF typical) | Minimizes signal coupling and phase shift in RF biasing, oscillator tuning, and high-speed comparator references |
Applications
| Industrial Sensor Signal Conditioning | Aerospace Power Supply Reference |
|---|---|
|
Use Scenario: Providing stable 3.3 V reference for 16-bit ADCs in temperature-transmitter front-ends operating from -40 °C to +85 °C ambient. IC Role / Device Role / Timing Role: Precision shunt voltage reference establishing ADC full-scale input range. Use Value: -0.070 %/°C tempco and 28 Ω ZZT limit reference drift to <±12 mV over full temperature range, meeting EN 61000-6-2 immunity requirements. |
Use Scenario: Biasing op-amp comparators in radiation-hardened satellite power sequencers exposed to total ionizing dose >100 krad(Si). IC Role / Device Role / Timing Role: Radiation-tolerant voltage clamp protecting control logic inputs during transient overvoltage events. Use Value: Inherent radiation hardness per MicroNote 050 enables operation without degradation after 100 krad(Si), unlike standard plastic-packaged Zeners. |
| Medical Instrument Low-Power Biasing | Automotive ECU Voltage Monitoring |
|
Use Scenario: Generating 3.3 V reference for ultra-low-power microcontroller reset circuitry in battery-operated portable EEG devices. IC Role / Device Role / Timing Role: Low-quiescent-current Zener regulator maintaining valid reset threshold across 2.0–3.6 V battery discharge curve. Use Value: 25 µA max leakage at 0.95 V allows operation down to 2.0 V supply while consuming <1 µW in standby - extending battery life beyond 12 months. |
Use Scenario: Monitoring 12 V vehicle battery health via voltage divider into MCU ADC, with overvoltage clamping at 15 V. IC Role / Device Role / Timing Role: Overvoltage protection element limiting divider node voltage to prevent ADC input damage during load-dump transients. Use Value: 0.5 W power rating and 250 °C/W RθJA enable absorption of 100 ms, 25 V load-dump spikes without failure per ISO 7637-2 Pulse 5a. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5226B-1 | Same 3.3 V, ±5%, 0.5 W spec but in axial DO-35 (DO-204AH) package - no surface-mount capability | Requires through-hole assembly; unsuitable for high-density PCBs or reflow-only processes | Select only when legacy board layout or manual repair constraints prohibit SMT adoption |
| BZX55C3V3 | 3.3 V, ±5%, 500 mW in DO-35, but plastic package - higher leakage (50 µA vs. 25 µA) and no MIL-PRF-19500 screening path | Lacks radiation hardness and hermetic sealing; not qualified for aerospace or high-reliability industrial use | Acceptable for cost-sensitive consumer electronics where environmental robustness is secondary |
Compared with 1N5226B-1 and BZX55C3V3, the 1N5226BUR-1 uniquely combines SMT compatibility, hermetic glass construction, radiation tolerance, and MIL-qualified screening options - making it the sole choice for space-constrained, high-reliability analog reference designs requiring long-term parametric stability.
Availability
1N5226BUR-1 is available at Aetrix Electronics and suitable for industrial sensor conditioning, aerospace power sequencing, medical instrument biasing, automotive voltage monitoring, and radiation-hardened system design requiring stable component supply across extended temperature and lifecycle demands.
Supply support for 1N5226BUR-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components since 1960.
The 1N5226BUR-1 belongs to Microsemi's legacy Zener regulator family designed for precision voltage reference and overvoltage protection in mission-critical systems where parameter stability, hermeticity, and extended temperature operation are mandatory.
FAQ
What is the Zener voltage tolerance and test current for the 1N5226BUR-1?
The 1N5226BUR-1 has a nominal Zener voltage of 3.3 V with ±5% tolerance, measured at a test current (IZT) of 20 mA. This tolerance is confirmed in the Electrical Characteristics table on page 3 of T4-LDS-0232-1 Rev. 1, and applies to all devices bearing the "B" suffix in the part nomenclature.
Does the 1N5226BUR-1 support RoHS compliance, and how is it indicated in the part number?
Yes, the 1N5226BUR-1 is available in RoHS-compliant versions marked with the "e3" suffix (e.g., 1N5226BUR-1e3), indicating annealed matte-tin plating on end caps. Per the datasheet, RoHS compliance is offered for commercial-grade units only - military-screened variants retain tin-lead plating.
What is the maximum power dissipation and thermal resistance of the 1N5226BUR-1?
The 1N5226BUR-1 has a steady-state power dissipation (PD) of 0.5 W and a junction-to-ambient thermal resistance (RθJA) of 250 °C/W when mounted on an FR4 board with 1 oz copper and the recommended footprint. Derating begins above 50 °C ambient or 125 °C end-cap temperature, per Figure 2.
How does the temperature coefficient of the 1N5226BUR-1 affect its performance across temperature ranges?
The 1N5226BUR-1 has a temperature coefficient (αVZ) of -0.070 %/°C, meaning its Zener voltage decreases by approximately 2.31 mV/°C around 3.3 V. This negative drift is confirmed for devices from 1N5221BUR-1 through 1N5242BUR-1 in Note 3 on page 4, and must be factored into reference accuracy budgets for wide-temperature applications.
Is the 1N5226BUR-1 suitable for radiation-intensive environments such as satellite systems?
Yes, the 1N5226BUR-1 is inherently radiation hard per Microsemi MicroNote 050, as stated in the Applications/Benefits section. Its metallurgically bonded glass construction and hermetic sealing provide proven resilience to total ionizing dose (TID) exposure - a key requirement for satellite power and telemetry subsystems.
1N5226BUR-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AA
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 3.3 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 28 Ohms
- Current - Reverse Leakage @ Vr:
- 25 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AA
1N5226BUR-1 FAQ
1.How can I place an order for 1N5226BUR-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5226BUR-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5226BUR-1 reliable?
The price and inventory of 1N5226BUR-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5226BUR-1 is usually 5 days.
3.What payment methods are accepted for 1N5226BUR-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5226BUR-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5226BUR-1?
1N5226BUR-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5226BUR-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5226BUR-1?
For technical support, including 1N5226BUR-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5226BUR-1 requirements.
6.How does Aetrix verify that 1N5226BUR-1 is sourced from the original manufacturer or authorized distributors?
All 1N5226BUR-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5226BUR-1 meets industry standards.
7.What is the process for return or replacement of 1N5226BUR-1?
All 1N5226BUR-1 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5226BUR-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5226BUR-1 part is unused and in its original packaging.
Return procedure for 1N5226BUR-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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