Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N5229BUR-1

Part No.:
1N5229BUR-1
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-213AA
Datasheet:
Aetrix1N5229BUR-1.pdf
Description:
DIODE ZENER 4.3V 500MW DO213AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,116

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N5229BUR-1 from Microsemi is a 4.3 V, ±5% tolerance, 500 mW surface-mount Zener diode in DO-213AA (SOD-80/MELF) glass package, designed for precision voltage regulation in low-power analog circuits, reference supplies, and overvoltage protection. It delivers 22 Ω dynamic impedance at 20 mA test current, 5 µA max reverse leakage at 0.95 V, and operates across –65 °C to +175 °C junction temperature.

For engineers reviewing the 1N5229BUR-1 datasheet, 1N5229BUR-1 pinout, 1N5229BUR-1 application, or 1N5229BUR-1 equivalent, key selection criteria include Zener voltage accuracy, low dynamic impedance, hermetic MELF packaging for reliability, temperature coefficient (+/–0.055 %/°C), and compatibility with automated SMT assembly under 260 °C soldering profiles.

Technical Context

This device functions as a two-terminal, reverse-biased silicon Zener regulator operating in its breakdown region. Its metallurgically bonded glass construction ensures stable voltage regulation with minimal capacitance and inherent radiation hardness per MicroNote 050. The 4.3 V nominal Zener voltage places it in the mid-range of the 1N52xx series where temperature coefficient transitions from negative to positive.

It is rated for 0.5 W steady-state power dissipation at end-cap temperature < 125 °C or ambient < 50 °C on FR4 with 1 oz Cu, with thermal resistance junction-to-ambient of 250 °C/W and junction-to-end-cap of 100 °C/W. Forward voltage is specified ≤1.1 V at 200 mA.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)4.3 V ±5% at 20 mA - defines precise regulation point for feedback loops and references.
Dynamic Impedance (ZZT)22 Ω at IZT = 20 mA - low AC impedance ensures stable output under varying load currents.
Reverse Leakage (IR)5 µA max at VR = 0.95 V - minimal standby current preserves battery life in low-power systems.
Power Dissipation (PD)0.5 W - sets maximum continuous DC power handling without derating on standard FR4 PCBs.
Temp. Coefficient (αVZ)±0.055 %/°C - enables predictable drift compensation in temperature-sensitive references.
Junction Temp. Range–65 °C to +175 °C - supports operation in harsh industrial, aerospace, and downhole environments.
PackageDO-213AA (SOD-80/MELF) - hermetically sealed glass body with tin-lead or RoHS-compliant matte-tin end caps.

Pinout & Package

DO-213AA (SOD-80/MELF) is a cylindrical, metallurgically bonded glass surface-mount package with two solderable end caps. Cathode is marked by a single band; polarity must be observed during placement - cathode end is positive during Zener regulation.

Pin/TerminalCircuit RoleDesign Meaning
Anode (unbanded end)Reference ground nodeConnected to circuit common; forms return path for Zener current during regulation.
Cathode (banded end)Regulated output nodeProvides stable 4.3 V relative to anode when reverse-biased above breakdown threshold.

Key Features

FeatureDesign Value
Hermetic glass MELF constructionEliminates moisture ingress and long-term parameter drift in humid or corrosive environments.
Metallurgical bond interfaceEnsures robust thermal and electrical connection between silicon die and end caps for reliable power cycling.
ESD insensitivity (MIL-STD-750 Method 1020)Enables handling without special ESD controls, reducing manufacturing overhead in high-volume SMT lines.
Radiation hardness (per MicroNote 050)Validated performance in total ionizing dose (TID) environments up to 100 krad(Si), suitable for space-grade designs.
RoHS-compliant option (e3 suffix)Meets EU Directive 2011/65/EU with annealed matte-tin plating; compatible with lead-free reflow profiles.

Applications

Low-Voltage Reference SupplyOvervoltage Clamp Protection

Use Scenario: Providing stable 4.3 V bias for op-amp input stages, ADC reference dividers, or sensor excitation in portable instrumentation.

IC Role / Device Role / Timing Role: Two-terminal shunt voltage reference establishing fixed potential relative to system ground.

Use Value: Delivers 22 Ω dynamic impedance and ±5% initial tolerance, enabling <1% total error in 12-bit measurement systems without trimming.

Use Scenario: Protecting microcontroller I/O pins or analog front-ends from transient surges exceeding 4.3 V in automotive body control modules.

IC Role / Device Role / Timing Role: Passive clamping element that conducts excess energy to ground when reverse voltage exceeds VZ.

Use Value: Responds within nanoseconds with 5 µA leakage at 0.95 V, minimizing standby loading while clamping fast transients up to 0.5 W peak.

Temperature-Stable Bias GeneratorIndustrial Sensor Signal Conditioning

Use Scenario: Generating bias points for thermistor or RTD signal chains where drift must remain below ±100 ppm/°C over –40 °C to +85 °C.

IC Role / Device Role / Timing Role: Zener-based voltage source whose temperature coefficient is compensated by series NTC elements.

Use Value: ±0.055 %/°C αVZ allows predictable, linear drift modeling - critical for calibration algorithms in field-deployed sensors.

Use Scenario: Regulating excitation voltage for 4–20 mA loop-powered pressure transmitters operating in factory automation cabinets.

IC Role / Device Role / Timing Role: Shunt regulator maintaining constant 4.3 V across loop transmitter supply rails despite line-voltage fluctuations.

Use Value: 0.5 W power rating and –65 °C to +175 °C operating range support continuous operation in unventilated enclosures with ambient up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N5229B-1Same 4.3 V, ±5%, DO-35 axial package; higher RθJA (300 °C/W), no hermetic seal.Suitable for prototyping or through-hole boards; not recommended for high-reliability or high-density SMT designs.Select 1N5229B-1 only if legacy through-hole assembly is required and environmental sealing is not critical.
BZX55-C4V34.3 V, ±5%, DO-35; 500 mW rating but higher ZZT (30 Ω), wider temp coefficient (±0.07 %/°C), non-hermetic epoxy.Lower cost alternative for commercial-grade consumer electronics where radiation hardness and ESD immunity are not required.Choose BZX55-C4V3 for cost-sensitive, non-critical applications with relaxed stability and reliability requirements.

Compared with 1N5229B-1 and BZX55-C4V3, the 1N5229BUR-1 offers superior thermal performance (RθJEC = 100 °C/W), hermetic sealing, and radiation tolerance - making it the preferred choice for aerospace, defense, and industrial control systems demanding long-term parametric stability.

Availability

1N5229BUR-1 is available at Aetrix Electronics and suitable for low-power voltage reference, overvoltage protection, and industrial sensor conditioning requiring stable component supply, extended temperature operation, and high-reliability packaging.

Supply support for 1N5229BUR-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog and mixed-signal ICs and discrete components.

The 1N52xxBUR-1 series belongs to Microsemi's legacy Zener regulator product line, engineered for mission-critical applications where hermeticity, temperature stability, and long-term parameter consistency are essential - particularly in aerospace, defense, and industrial infrastructure.

FAQ

What is the Zener voltage tolerance for 1N5229BUR-1?

The 1N5229BUR-1 has a nominal Zener voltage of 4.3 V with a tolerance of ±5%, as indicated by the "B" suffix in the part number per Microsemi's nomenclature. This tolerance is guaranteed at 25 °C with IZT = 20 mA and applies to all units meeting commercial screening standards.

Does 1N5229BUR-1 support RoHS compliance?

Yes, the 1N5229BUR-1 is available in RoHS-compliant form with the "e3" suffix (e.g., 1N5229BUR-1e3), featuring annealed matte-tin plating on end caps. RoHS versions are offered for commercial-grade units only and meet EU Directive 2011/65/EU requirements.

What is the maximum reverse leakage current for 1N5229BUR-1?

The maximum reverse leakage current for 1N5229BUR-1 is 5 µA at VR = 0.95 V and TA = 25 °C. This value is specified in the Electrical Characteristics table on page 3 of the T4-LDS-0232-1 datasheet and reflects low standby power consumption ideal for battery-operated systems.

Can 1N5229BUR-1 be used in high-temperature environments?

Yes, the 1N5229BUR-1 is rated for junction and storage temperatures from –65 °C to +175 °C. Its metallurgically bonded glass DO-213AA package maintains parameter stability under thermal cycling, making it suitable for under-hood automotive, downhole oil/gas, and industrial furnace control applications.

What is the dynamic impedance of 1N5229BUR-1 and why does it matter?

The dynamic impedance (ZZT) of 1N5229BUR-1 is 22 Ω at IZT = 20 mA. This low value indicates minimal change in regulated voltage under varying load current - critical for maintaining accuracy in precision reference and feedback circuits where load transients occur.

1N5229BUR-1 Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-213AA
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
4.3 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
22 Ohms
Current - Reverse Leakage @ Vr:
5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-213AA

1N5229BUR-1 FAQ

1.How can I place an order for 1N5229BUR-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5229BUR-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5229BUR-1 reliable?

The price and inventory of 1N5229BUR-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5229BUR-1 is usually 5 days.

3.What payment methods are accepted for 1N5229BUR-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5229BUR-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5229BUR-1?

1N5229BUR-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5229BUR-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5229BUR-1?

For technical support, including 1N5229BUR-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5229BUR-1 requirements.

6.How does Aetrix verify that 1N5229BUR-1 is sourced from the original manufacturer or authorized distributors?

All 1N5229BUR-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5229BUR-1 meets industry standards.

7.What is the process for return or replacement of 1N5229BUR-1?

All 1N5229BUR-1 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5229BUR-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5229BUR-1 part is unused and in its original packaging.

Return procedure for 1N5229BUR-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N5229BUR-1 Tags

  • 1N5229BUR-1
  • 1N5229BUR-1 PDF
  • 1N5229BUR-1 Datasheet
  • 1N5229BUR-1 Specifications
  • 1N5229BUR-1 Images
  • Microchip Technology
  • Microchip Technology 1N5229BUR-1
  • Buy 1N5229BUR-1
  • 1N5229BUR-1 Price
  • 1N5229BUR-1 Distributor
  • 1N5229BUR-1 Supplier
  • 1N5229BUR-1 Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER