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Microchip Technology 1N5229BUR-1/TR

Part No.:
1N5229BUR-1/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-213AA
Datasheet:
Aetrix1N5229BUR-1/TR.pdf
Description:
DIODE ZENER 4.3V 500MW DO213AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:329

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Product details

Overview

1N5229BUR-1/TR from Microsemi is a 4.3 V, ±5% tolerance, 500 mW surface-mount Zener diode in DO-213AA (SOD80) MELF package, designed for precision voltage regulation in low-power analog circuits, reference supplies, and overvoltage protection. It delivers 22 Ω dynamic impedance at 20 mA test current, operates from –65 °C to +175 °C, and exhibits +0.055 %/°C temperature coefficient.

For engineers reviewing the 1N5229BUR-1/TR datasheet, 1N5229BUR-1/TR pinout, 1N5229BUR-1/TR application, or 1N5229BUR-1/TR equivalent, key selection criteria include Zener voltage accuracy, thermal resistance (100 °C/W junction-to-end-cap), low leakage (<5 µA at 0.95 V), minimal capacitance, and MIL-PRF-19500 upscreening capability.

Technical Context

This device functions as a two-terminal reverse-biased voltage reference, operating in its breakdown region with regulated output across a wide current range (0.25 mA to 60 mA). Its metallurgically bonded glass construction ensures hermetic sealing and radiation hardness per MicroNote 050, while the DO-213AA package enables high-reliability surface-mount assembly with 260 °C solder tolerance.

The 1N5229BUR-1/TR exhibits a positive temperature coefficient (+0.055 %/°C), making it suitable for temperature-compensated references when paired with negative-TC components. Its 22 Ω Zener impedance at IZT = 20 mA and 2000 Ω impedance near the knee (IZK = 0.25 mA) define its regulation stability under varying load and line conditions.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage VZ4.3 V ±5% at 20 mA - defines stable regulation point for biasing and reference circuits
Power Dissipation0.5 W - supports continuous operation up to 500 mW with derating above 50 °C ambient
Zener Impedance ZZT22 Ω at 20 mA - determines output voltage variation under load transients
Reverse Leakage IR<5 µA at 0.95 V - ensures minimal quiescent current in standby regulation
Temp. Coefficient αVZ+0.055 %/°C - enables predictable drift compensation in precision references
Junction Temp. Range–65 °C to +175 °C - supports operation in aerospace, downhole, and industrial environments
Thermal Resistance RθJEC100 °C/W - allows direct thermal path to PCB end cap for improved power handling

Pinout & Package

DO-213AA (SOD80 or MLL34) MELF glass package with hermetically sealed metallurgical bond; cathode indicated by single band; terminals are tin-lead or RoHS-compliant matte-tin end caps.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminal / Zener cathode referenceConnected to circuit ground or lower potential node during Zener operation
CathodeZener regulation terminal / voltage reference outputBanded end; connected to regulated voltage rail; polarity critical for correct breakdown operation

Key Features

FeatureDesign Value
Hermetic glass MELF constructionEnables long-term reliability and moisture resistance in harsh environments without conformal coating
MIL-PRF-19500 upscreening optionSupports military/aerospace qualification paths with traceable screening and lot control
Low capacitance (typ. <2 pF)Minimizes signal coupling and noise injection in RF-adjacent or high-speed analog circuits
Radiation-hardened per MicroNote 050Validated performance in total ionizing dose (TID) environments up to 100 krad(Si)
ESD robustness (MIL-STD-750 Method 1020)Withstands >4 kV HBM without parameter shift-reduces handling sensitivity in production

Applications

Industrial Sensor Signal ConditioningAerospace Power Supply Reference

Use Scenario: Stabilizing excitation voltage for bridge-based pressure sensors in factory automation PLC modules.

IC Role / Device Role / Timing Role: Zener diode providing fixed 4.3 V reference for op-amp biasing and ADC reference scaling.

Use Value: Tight 5% tolerance and +0.055 %/°C TC enable <±0.5% reference drift over –40 °C to +85 °C operating range.

Use Scenario: Generating a stable local reference in satellite power management units exposed to radiation.

IC Role / Device Role / Timing Role: Radiation-hardened voltage clamp protecting LDO feedback nodes from transient overvoltage.

Use Value: Hermetic DO-213AA package and MicroNote 050 qualification ensure functional integrity after 100 krad(Si) TID exposure.

Medical Instrumentation BiasingAutomotive ECU Voltage Monitoring

Use Scenario: Establishing precise bias points for low-noise amplifiers in portable ultrasound front-ends.

IC Role / Device Role / Timing Role: Low-capacitance (≈1.8 pF) Zener regulating op-amp supply rails to minimize signal path interference.

Use Value: Sub-2 pF capacitance prevents high-frequency coupling into sensitive analog acquisition paths.

Use Scenario: Monitoring battery voltage thresholds in engine control units using discrete comparator circuits.

IC Role / Device Role / Timing Role: 4.3 V Zener acting as threshold reference for undervoltage lockout (UVLO) detection.

Use Value: Wide –65 °C to +175 °C junction rating supports operation inside hot engine compartments without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N5229B-1/TRSame 4.3 V, ±5%, DO-35 axial package; higher RθJA (300 °C/W vs. 250 °C/W); no MIL-PRF-19500 optionSuitable for through-hole prototyping or legacy board rework; lacks MELF thermal performanceSelect when axial mounting is required and thermal budget permits higher junction rise
BZX55C4V3-TR4.3 V, ±5%, DO-35; 500 mW rating; 30 Ω ZZT; non-radiation-hardened; RoHS-onlyCost-optimized commercial use; not qualified for aerospace or high-reliability industrial deploymentChoose for cost-sensitive consumer electronics where radiation hardness and MIL screening are unnecessary

Compared with 1N5229BUR-1/TR, the 1N5229B-1/TR offers identical electrical specs but inferior thermal performance and no upscreening path, while BZX55C4V3-TR trades radiation hardness and hermeticity for lower unit cost in non-critical applications.

Availability

1N5229BUR-1/TR is available at Aetrix Electronics and suitable for industrial sensor conditioning, aerospace power reference, and medical instrumentation requiring stable component supply, extended temperature operation, and radiation-tolerant design.

Supply support for 1N5229BUR-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.

The 1N52xxBUR-1 series targets applications demanding hermetic packaging, radiation tolerance, and MIL-qualified reliability-especially where surface-mount Zener regulation must replace legacy axial devices without sacrificing performance.

FAQ

What is the Zener voltage tolerance and test current for the 1N5229BUR-1/TR?

The 1N5229BUR-1/TR has a nominal Zener voltage of 4.3 V with a ±5% tolerance, measured at a test current (IZT) of 20 mA. This tolerance corresponds to the "B" suffix in the part nomenclature and is guaranteed across the full operating temperature range of –65 °C to +175 °C.

Does the 1N5229BUR-1/TR support MIL-PRF-19500 qualification?

Yes, the 1N5229BUR-1/TR is available with upscreening per MIL-PRF-19500 upon request. The base commercial version carries the "UR" designation indicating metallurgically bonded surface-mount construction; specific reliability levels (e.g., JAN, JANTX) require additional ordering codes and factory coordination.

What is the maximum reverse leakage current for the 1N5229BUR-1/TR?

The 1N5229BUR-1/TR specifies a maximum reverse leakage current (IR) of 5 µA at a reverse voltage (VR) of 0.95 V. This low leakage supports energy-efficient operation in battery-powered or low-quiescent-current applications where standby power loss must be minimized.

Is the 1N5229BUR-1/TR RoHS compliant?

Yes, the 1N5229BUR-1/TR is available in RoHS-compliant versions marked with the "e3" suffix (e.g., 1N5229BUR-1e3/TR). RoHS compliance applies only to commercial-grade variants; MIL-spec versions retain leaded terminations per exemption requirements.

What package type does the 1N5229BUR-1/TR use, and what are its key mechanical features?

The 1N5229BUR-1/TR uses the DO-213AA (SOD80 or MLL34) MELF glass package: hermetically sealed, metallurgically bonded, with tin-lead or RoHS-compliant matte-tin end caps. Dimensions are 1.60–1.70 mm diameter (A) and 3.30–3.70 mm length (B), enabling high-density SMT placement and superior thermal transfer via end-cap solder joints.

1N5229BUR-1/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-213AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
4.3 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
22 Ohms
Current - Reverse Leakage @ Vr:
5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-213AA

1N5229BUR-1/TR FAQ

1.How can I place an order for 1N5229BUR-1/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5229BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5229BUR-1/TR reliable?

The price and inventory of 1N5229BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5229BUR-1/TR is usually 5 days.

3.What payment methods are accepted for 1N5229BUR-1/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5229BUR-1/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5229BUR-1/TR?

1N5229BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5229BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5229BUR-1/TR?

For technical support, including 1N5229BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5229BUR-1/TR requirements.

6.How does Aetrix verify that 1N5229BUR-1/TR is sourced from the original manufacturer or authorized distributors?

All 1N5229BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5229BUR-1/TR meets industry standards.

7.What is the process for return or replacement of 1N5229BUR-1/TR?

All 1N5229BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5229BUR-1/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5229BUR-1/TR part is unused and in its original packaging.

Return procedure for 1N5229BUR-1/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N5229BUR-1/TR Tags

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