onsemi 1N5233B_T26A

Overview

1N5233B_T26A from ON Semiconductor is a 6.0 V ±5% Zener diode in DO-35 glass package, rated for 500 mW power dissipation at 25°C, with 7.0 Ω dynamic impedance at 20 mA test current and 5.0 μA maximum reverse leakage at 4.8 V. It serves as a precision voltage reference or overvoltage clamp in low-power analog signal conditioning circuits.

For engineers reviewing the 1N5233B_T26A datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal derating behavior, cathode identification, and direct alternatives for voltage reference design, power rail stabilization, and ESD-protected sensor interface circuits.

Technical Context

The 1N5233B_T26A operates as a silicon planar Zener diode with sharp reverse breakdown at nominal 6.0 V, exhibiting a temperature coefficient of +0.038 %/°C - indicating positive drift with rising junction temperature. Its 7.0 Ω Zener impedance at I_Z = 20 mA ensures stable regulation under moderate load variation.

Designed for operation within -65°C to +200°C junction temperature range, it supports reliable performance in industrial ambient environments. The DO-35 hermetically sealed glass package provides mechanical robustness and low parasitic capacitance (<2 pF), making it suitable for noise-sensitive analog references.

Key Specifications

Pinout & Package

DO-35 glass axial package with cathode identified by color band; two-terminal device with no internal pin numbering - anode and cathode are defined solely by physical orientation and band marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N5233B_T26A, the 1N4735A offers higher power but requires PCB redesign, while BZX55C6V2 matches the DO-35 form factor but shifts regulation point and increases temperature-induced drift - both demand validation in the target voltage tolerance budget.

Availability

1N5233B_T26A is available at Aetrix Electronics and suitable for voltage reference design, analog sensor interface, and 5 V system protection requiring stable component supply across automotive, industrial control, and IoT edge device programs.

Supply support for 1N5233B_T26A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, and sensing solutions for automotive, industrial, and cloud infrastructure markets.

The 1N52xxB series was designed for general-purpose precision voltage regulation in space-constrained, low-power applications where DO-35 reliability and ±5% tolerance meet cost-performance targets.

FAQ

What is the nominal Zener voltage and tolerance of the 1N5233B_T26A?

The 1N5233B_T26A has a nominal Zener voltage of 6.0 V with a tolerance of ±5%, meaning its actual breakdown voltage falls between 5.7 V and 6.3 V when tested at 20 mA. This specification is guaranteed per ON Semiconductor's 1N5221B–1N5263B datasheet Rev. 3, and applies directly to the 1N5233B_T26A variant. The tolerance ensures predictable clamping behavior in production-grade voltage reference circuits without calibration.

Does the 1N5233B_T26A have a specified Zener impedance, and what does it mean for circuit design?

Yes, the 1N5233B_T26A exhibits a Zener impedance (Z_Z) of 7.0 Ω at I_Z = 20 mA. This value quantifies how much the output voltage changes per unit change in current - for example, a 10 mA load shift causes ~70 mV variation. Designers use this parameter to estimate regulation error in shunt reference applications and select appropriate series resistors to maintain stable bias current across input voltage ranges.

What is the temperature coefficient of the 1N5233B_T26A, and how does it affect long-term stability?

The 1N5233B_T26A has a temperature coefficient of +0.038 %/°C, meaning its Zener voltage increases by approximately 2.28 mV per °C rise in junction temperature. This positive drift must be accounted for in high-accuracy references; for instance, a 50°C ambient-to-junction rise adds ~114 mV to the nominal 6.0 V. The 1N5233B_T26A's low TC makes it preferable over higher-drift variants like 1N5235B (+0.05 %/°C) in thermally uncontrolled enclosures.

Can the 1N5233B_T26A be used in forward-biased applications, and what is its forward voltage?

Yes, the 1N5233B_T26A functions as a standard silicon diode when forward biased, with a maximum forward voltage (V_F) of 1.2 V at 200 mA. This characteristic enables dual-use roles - such as reverse-bias voltage regulation and forward-bias polarity protection - in compact protection circuits. However, its primary design intent remains Zener operation, so forward-current capability is secondary and not optimized for rectification.

What package type and marking identify the cathode on the 1N5233B_T26A?

The 1N5233B_T26A uses the DO-35 hermetically sealed glass axial package, with the cathode identified by a single color band near one lead end. Per ON Semiconductor's top-marking specification, the device is marked with "LOGO" on line 1, "23" on line 2, and "3B" on line 3 - confirming its identity as part of the 1N523xB family. The band location is standardized and unambiguous for automated optical inspection and manual assembly verification.