Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N5233BUR-1/TR

Part No.:
1N5233BUR-1/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-213AA
Datasheet:
Aetrix1N5233BUR-1/TR.pdf
Description:
DIODE ZENER 6V 500MW DO213AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,069

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N5233BUR-1/TR from Microsemi is a 6.0 V, ±5% tolerance, 500 mW surface-mount Zener diode in DO-213AA (SOD-80/MELF) package, designed for precision voltage regulation in low-power analog circuits, reference supplies, and overvoltage protection. It delivers 7.0 Ω dynamic impedance at 20 mA test current, operates from –65 °C to +175 °C, and exhibits +0.038 %/°C temperature coefficient.

For engineers reviewing the 1N5233BUR-1/TR datasheet, 1N5233BUR-1/TR pinout, 1N5233BUR-1/TR application, or 1N5233BUR-1/TR equivalent, key selection criteria include Zener voltage accuracy, thermal resistance (100 °C/W junction-to-end-cap), low leakage (<5.0 µA @ 3.3 V), hermetic glass packaging, and RoHS-compliant commercial-grade availability with TR tape-and-reel delivery.

Technical Context

This device functions as a two-terminal voltage reference operating in reverse breakdown, where regulation occurs at a precisely defined Zener voltage (6.0 V) under controlled test current (20 mA). Its metallurgically bonded glass construction ensures stable long-term performance and radiation hardness per MicroNote 050.

The 1N5233BUR-1/TR uses a MELF-style DO-213AA package with end-cap terminals, requiring orientation-aware PCB layout due to cathode band marking. Thermal management relies on end-cap conduction (RθJEC = 100 °C/W), not ambient convection (RθJA = 250 °C/W), making it suitable for thermally constrained SMT designs.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage VZ6.0 V ±5% at IZT = 20 mA - defines nominal regulation point with tight production control
Power Dissipation PD0.5 W - maximum steady-state power at TEC < 125 °C or TA < 50 °C on FR4
Dynamic Impedance ZZT7.0 Ω - low AC impedance ensures stable output under varying load currents
Reverse Leakage IR<5.0 µA @ VR = 3.3 V - minimal parasitic current preserves low-power circuit integrity
Temp. Coefficient αVZ+0.038 %/°C - positive drift enables predictable biasing across industrial temperature range
Junction Temp. Range–65 °C to +175 °C - supports operation in harsh environments including aerospace and downhole electronics
Forward Voltage VF≤1.1 V @ IF = 200 mA - enables use as clamp or protection diode in forward bias

Pinout & Package

DO-213AA (SOD-80 / MELF) hermetically sealed glass package with metallurgically bonded internal structure. Cathode identified by single black band; polarity must be observed during placement - banded end is anode when used in forward bias, but functions as cathode (positive terminal) during Zener regulation.

Pin/TerminalCircuit RoleDesign Meaning
Anode (unbanded end)Reference Ground NodeConnected to system ground or lowest potential node in shunt regulator configuration
Cathode (banded end)Regulated Output NodeProvides stable 6.0 V relative to anode; requires series resistor to limit IZ within 0.5 W limit

Key Features

FeatureDesign Value
Hermetic Glass EncapsulationPrevents moisture ingress and parameter drift over time, enabling >20-year reliability in sealed assemblies
MIL-PRF-19500 Screening OptionAvailable with up-screening for high-reliability applications (e.g., space-qualified variants via MQ/MX/MV suffixes)
Low CapacitanceTypical CJ < 5 pF - minimizes signal coupling and phase shift in RF-biased or high-speed reference paths
ESD RobustnessNon-sensitive per MIL-STD-750 Method 1020 - eliminates need for external ESD protection in board-level handling
Radiation HardnessInherently radiation-tolerant per Microsemi MicroNote 050 - validated for total ionizing dose (TID) up to 100 krad(Si)

Applications

Industrial Sensor Signal ConditioningMedical Instrument Reference Supply

Use Scenario: Stabilizing excitation voltage for bridge-based pressure transducers in factory automation PLC modules.

IC Role / Device Role / Timing Role: Shunt voltage reference providing 6.0 V bias to Wheatstone bridge, compensating for supply rail variation.

Use Value: 7.0 Ω ZZT and +0.038 %/°C αVZ ensure bridge output remains linear across –40 °C to +85 °C ambient.

Use Scenario: Generating precise 6.0 V reference for ADC front-end in portable ECG monitors.

IC Role / Device Role / Timing Role: Low-noise, low-drift voltage reference for 16-bit SAR ADC reference input (REF+).

Use Value: ≤5.0 µA leakage and hermetic glass package prevent reference drift and long-term calibration loss in battery-powered devices.

Aerospace Power SequencingTelecom Line Card Overvoltage Clamp

Use Scenario: Enabling controlled power-up sequencing of FPGA I/O banks in satellite payload controllers.

IC Role / Device Role / Timing Role: Zener clamp regulating auxiliary 6.0 V rail that gates enable signals to downstream LDOs.

Use Value: Radiation hardness and –65 °C to +175 °C operation support mission-critical functionality in LEO orbital environments.

Use Scenario: Protecting Ethernet PHY interface pins from transient surges on 48 V PoE lines.

IC Role / Device Role / Timing Role: Fast-response shunt clamp limiting voltage to 6.0 V during ESD or lightning-induced spikes.

Use Value: 1.1 V forward drop allows bidirectional clamping when paired with series diode; glass package withstands repeated surge events without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N5233B-1/TRSame electrical specs but in axial DO-35 package; no hermetic glass seal; higher RθJA (300 °C/W)Limited to non-harsh environments; unsuitable for high-reliability or radiation-exposed useSelect when cost or legacy through-hole assembly outweighs thermal/radiation requirements
BZX55C6V2-TR6.2 V nominal, ±5% tolerance; 500 mW; plastic DO-35; higher ZZT (10 Ω); no radiation hardness dataNot qualified for aerospace or medical safety-critical systems; lower temp range (–65 °C to +150 °C)Choose for consumer-grade applications where 0.2 V higher Zener voltage is acceptable and RoHS compliance is mandatory

Compared with 1N5233B-1/TR and BZX55C6V2-TR, the 1N5233BUR-1/TR uniquely combines hermetic MELF packaging, radiation tolerance, and 7.0 Ω ZZT, making it the only option qualified for extended-life, high-stability, and mission-critical voltage reference roles.

Availability

1N5233BUR-1/TR is available at Aetrix Electronics and suitable for industrial sensor conditioning, medical instrument reference supplies, aerospace power sequencing, telecom overvoltage clamping, and precision analog calibration requiring stable component supply across extended temperature and radiation environments.

Supply support for 1N5233BUR-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and high-performance analog and mixed-signal components.

The 1N52xxBUR-1 series was developed to deliver JEDEC-standard Zener performance in ruggedized surface-mount form, targeting aerospace, defense, medical, and industrial systems where long-term stability and environmental resilience are mandatory.

FAQ

What is the Zener voltage tolerance of the 1N5233BUR-1/TR?

The 1N5233BUR-1/TR has a nominal Zener voltage of 6.0 V with a guaranteed tolerance of ±5%, as indicated by the "B" suffix in the part number per Microsemi's nomenclature. This tolerance is verified at 20 mA test current and 25 °C ambient, and applies across the full operating temperature range of –65 °C to +175 °C.

Is the 1N5233BUR-1/TR RoHS compliant?

Yes, the 1N5233BUR-1/TR is RoHS compliant (lead-free annealed matte-tin plating) as confirmed by the "e3" designation in its full nomenclature and stated in the datasheet. RoHS compliance applies only to commercial-grade versions; military-screened variants (MQ/MX/MV) retain tin-lead terminations.

What does the "UR-1" suffix mean in 1N5233BUR-1/TR?

The "UR-1" suffix identifies the device as a metallurgically bonded, surface-mount Zener in DO-213AA (MELF) package, per Microsemi's standard nomenclature. "UR" denotes the package type and bonding method, while "-1" indicates compliance with JEDEC 1N52xx specifications. The "TR" suffix added externally confirms tape-and-reel packaging per EIA-481-B.

Can the 1N5233BUR-1/TR be used in forward bias?

Yes, the 1N5233BUR-1/TR can operate in forward bias with a maximum forward voltage of 1.1 V at 200 mA, as specified in the Absolute Maximum Ratings table. This enables dual-use as both a Zener regulator and a low-drop rectifier or clamp diode in protection circuits.

What is the thermal resistance path for the 1N5233BUR-1/TR?

The 1N5233BUR-1/TR has two defined thermal resistance values: RθJEC = 100 °C/W (junction-to-end-cap), which governs heat transfer through the metallurgically bonded end caps, and RθJA = 250 °C/W (junction-to-ambient), measured on FR4 with 1 oz copper and recommended footprint. Effective thermal design must prioritize end-cap conduction.

1N5233BUR-1/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-213AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
6 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
7 Ohms
Current - Reverse Leakage @ Vr:
5 µA @ 3.5 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-213AA

1N5233BUR-1/TR FAQ

1.How can I place an order for 1N5233BUR-1/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5233BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5233BUR-1/TR reliable?

The price and inventory of 1N5233BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5233BUR-1/TR is usually 5 days.

3.What payment methods are accepted for 1N5233BUR-1/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5233BUR-1/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5233BUR-1/TR?

1N5233BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5233BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5233BUR-1/TR?

For technical support, including 1N5233BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5233BUR-1/TR requirements.

6.How does Aetrix verify that 1N5233BUR-1/TR is sourced from the original manufacturer or authorized distributors?

All 1N5233BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5233BUR-1/TR meets industry standards.

7.What is the process for return or replacement of 1N5233BUR-1/TR?

All 1N5233BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5233BUR-1/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5233BUR-1/TR part is unused and in its original packaging.

Return procedure for 1N5233BUR-1/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N5233BUR-1/TR Tags

  • 1N5233BUR-1/TR
  • 1N5233BUR-1/TR PDF
  • 1N5233BUR-1/TR Datasheet
  • 1N5233BUR-1/TR Specifications
  • 1N5233BUR-1/TR Images
  • Microchip Technology
  • Microchip Technology 1N5233BUR-1/TR
  • Buy 1N5233BUR-1/TR
  • 1N5233BUR-1/TR Price
  • 1N5233BUR-1/TR Distributor
  • 1N5233BUR-1/TR Supplier
  • 1N5233BUR-1/TR Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER