onsemi 1N5236B_T50R

Overview

1N5236B_T50R from ON Semiconductor is a 7.5 V ±5% tolerance, 500 mW glass-encapsulated Zener diode in DO-35 package, designed for precision voltage regulation and reference applications in low-power analog circuits, power supply feedback loops, and overvoltage protection. It exhibits 6.0 Ω dynamic impedance at 20 mA, -65°C to +200°C operating junction temperature, and 3.0 μA maximum reverse leakage at 5.7 V.

For engineers reviewing the 1N5236B_T50R datasheet, pinout, applications, or equivalent options, key selection criteria include Zener voltage accuracy, thermal stability (TC = +0.058 %/°C), low dynamic impedance, DO-35 mechanical compatibility, and compliance with JEDEC DO-204AH standards.

Technical Context

This device operates as a two-terminal voltage reference by exploiting controlled reverse breakdown in a silicon p-n junction. Its Zener voltage is specified at I_Z = 20 mA with thermal equilibrium maintained at lead temperature of 30°C ±1°C and 3/8″ lead length. The 7.5 V nominal rating falls within the mid-range of the 1N52xxB family where TC transitions from negative to positive slope.

The DO-35 hermetically sealed glass package ensures stable long-term voltage performance and low leakage. Absolute maximum ratings include 500 mW power dissipation at 25°C, derating linearly by 4.0 mW/°C above 50°C, and storage/junction temperature limits spanning -65°C to +200°C.

Key Specifications

Pinout & Package

DO-35 glass axial-leaded package: hermetically sealed, 0.533 mm diameter body, 4.56 mm length, 0.137 g mass, JEDEC DO-204AH compliant. Cathode identified by color band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4734A and BZX55C7V5, the 1N5236B_T50R offers superior voltage accuracy (±5% vs. ±10%) in the same DO-35 form factor as BZX55C7V5, making it optimal for space-constrained, precision-regulation designs where thermal stability and low leakage are prioritized over raw power capacity.

Availability

1N5236B_T50R is available at Aetrix Electronics and suitable for power supply feedback, overvoltage protection, reference voltage source, and analog sensor biasing applications requiring stable component supply and consistent DO-35 packaging.

Supply support for 1N5236B_T50R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and edge applications.

The 1N52xxB series was developed as a standardized, high-reliability Zener diode family for general-purpose voltage regulation and reference functions in cost-sensitive, high-volume electronic systems.

FAQ

What is the Zener voltage tolerance of the 1N5236B_T50R?

The 1N5236B_T50R has a Zener voltage tolerance of ±5%, meaning its rated 7.5 V breakdown voltage falls between 7.125 V and 7.875 V when measured at 20 mA and thermal equilibrium. This tolerance is guaranteed per ON Semiconductor's 1N5221B–1N5263B Rev. 3 datasheet and applies to all units marked "1N5236B" with T50R suffix indicating DO-35 packaging and standard test conditions.

Does the 1N5236B_T50R have a positive or negative temperature coefficient?

Yes, the 1N5236B_T50R exhibits a positive temperature coefficient of +0.058 %/°C, as confirmed in the Electrical Characteristics table of the official ON Semiconductor datasheet. This means its Zener voltage increases slightly with rising temperature - a characteristic leveraged in temperature-compensated reference designs where it offsets negative TC elements like bipolar transistors.

What is the maximum reverse leakage current for the 1N5236B_T50R?

The maximum reverse leakage current for the 1N5236B_T50R is 3.0 μA at V_R = 5.7 V and T_A = 25°C, per the ON Semiconductor 1N5221B–1N5263B datasheet. This low leakage supports use in high-impedance bias networks and battery-critical applications where standby current must be minimized.

Is the 1N5236B_T50R packaged in a DO-35 or DO-41 case?

The 1N5236B_T50R uses the DO-35 glass axial-leaded package, as indicated by the "T50R" suffix and confirmed by dimensional drawings (DO35AREV03) and JEDEC DO-204AH compliance stated in the ON Semiconductor datasheet. Its body diameter is 0.533 mm and length is 4.56 mm - distinct from the larger DO-41 package used in the 1N47xx series.

Can the 1N5236B_T50R replace the 1N5236B without modification?

Yes, the 1N5236B_T50R is functionally and mechanically identical to the base 1N5236B part - the "T50R" suffix denotes standard DO-35 packaging and test conditions per ON Semiconductor's nomenclature. No PCB layout or schematic changes are needed; both share identical Zener voltage, impedance, leakage, and thermal specifications per Rev. 3 datasheet.