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Microchip Technology 1N5236BUR-1
- Part No.:
- 1N5236BUR-1
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AA
- Datasheet:
-
1N5236BUR-1.pdf
- Description:
- DIODE ZENER 7.5V 500MW DO213AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,865
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Product details
Overview
1N5236BUR-1 from Microsemi is a 7.5 V, 500 mW surface-mount Zener diode in DO-213AA (SOD80/MLL34) MELF glass package, rated for ±5% tolerance at 20 mA test current, with 6.0 Ω dynamic impedance and +0.058 %/°C temperature coefficient-used for precision voltage regulation in low-power analog reference and bias circuits.
For engineers reviewing the 1N5236BUR-1 datasheet, 1N5236BUR-1 pinout, 1N5236BUR-1 application, or 1N5236BUR-1 equivalent, key selection criteria include Zener voltage stability over temperature, low dynamic impedance for ripple suppression, hermetic glass packaging for reliability, and compatibility with automated SMT assembly on FR4 boards.
Technical Context
This device operates as a reverse-biased voltage reference, maintaining 7.5 V across its terminals at IZT = 20 mA with ZZT = 6.0 Ω and αVZ = +0.058 %/°C. It exhibits minimal capacitance (typical <3 pF per Figure 3) and is non-sensitive to ESD per MIL-STD-750 Method 1020.
Designed for metallurgical bonding within a hermetically sealed glass MELF structure, it delivers radiation hardness per MicroNote 050 and supports up-screening to MIL-PRF-19500. Thermal resistance is RθJA = 250 °C/W on FR4 with 1 oz Cu and recommended footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 7.5 V at 20 mA - stable regulation point for low-current reference circuits |
| Power Dissipation PD | 0.5 W - limits continuous operating current to ~67 mA at 7.5 V |
| Dynamic Impedance ZZT | 6.0 Ω at 20 mA - ensures low output impedance for effective ripple rejection |
| Temp. Coefficient αVZ | +0.058 %/°C - predictable positive drift enables compensation in multi-device references |
| Max Reverse Leakage IR | 3.0 µA at VR = 5.7 V - negligible error contribution in high-impedance bias networks |
| Junction Temp. Range | -65 to +175 °C - supports operation in extended industrial and aerospace environments |
| Forward Voltage VF | 1.1 V max at 200 mA - defines forward conduction threshold for polarity protection |
Pinout & Package
DO-213AA (SOD80 / MLL34) metallurgically bonded glass MELF package with two end-cap terminals; cathode identified by single band; no internal leads or die attach wire-hermetic seal ensures long-term parameter stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unbanded end) | Reference ground node | Connected to circuit common; reverse bias applied with cathode positive |
| Cathode (banded end) | Zener regulation terminal | Applied positive voltage relative to anode to enter breakdown; carries regulated current |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass MELF construction | Eliminates moisture ingress and parameter drift over time-critical for 15+ year field life |
| Metallurgical bond interface | Reduces thermal interface resistance vs. epoxy-bonded alternatives-improves power handling consistency |
| Low capacitance (<3 pF typical) | Minimizes high-frequency loading in RF bias and oscillator tuning applications |
| Radiation hardness (per MicroNote 050) | Validated performance in total ionizing dose (TID) environments up to 100 krad(Si) |
| MIL-PRF-19500 up-screening option | Enables qualification for military/aerospace programs requiring screening beyond commercial grade |
Applications
| Instrumentation Reference | Power Supply Feedback |
|---|---|
Use Scenario: Precision analog front-end in handheld multimeters and data loggers requiring stable 7.5 V reference under varying battery voltage. IC Role / Device Role / Timing Role: Zener diode provides fixed voltage reference for ADC reference buffer and op-amp bias network. Use Value: ±5% tolerance and +0.058 %/°C TC enable <±0.5% total error over -40 to +85 °C without trimming. |
Use Scenario: Secondary-side voltage sensing in isolated flyback converters where optocoupler feedback requires accurate scaling. IC Role / Device Role / Timing Role: Sets feedback threshold for TL431 or similar shunt regulator via resistive divider. Use Value: 6.0 Ω dynamic impedance minimizes regulation error caused by divider current variation across load conditions. |
| Aerospace Sensor Biasing | ESD-Resilient Interface Protection |
Use Scenario: Biasing of piezoresistive pressure sensors in satellite payload modules exposed to radiation and thermal cycling. IC Role / Device Role / Timing Role: Provides stable excitation voltage for Wheatstone bridge elements in harsh orbital environment. Use Value: Radiation hardness per MicroNote 050 and -65 to +175 °C rating ensure uninterrupted operation during mission-critical phases. |
Use Scenario: Clamping element in RS-485 transceiver input protection networks subjected to repeated ESD events. IC Role / Device Role / Timing Role: Low-leakage (3.0 µA @ 5.7 V) Zener absorbs transient energy while preserving signal integrity. Use Value: Non-sensitivity to ESD per MIL-STD-750 Method 1020 eliminates degradation after >1000 contact discharges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5236B-1 (DO-35 axial) | Same electrical specs but axial DO-35 package; higher RθJA (~300 °C/W); no MELF hermeticity | Suitable for prototyping or through-hole legacy designs; not for high-reliability SMT production | Select only when board layout prohibits MELF placement or hand-soldering is required |
| BZX55C7V5 (DO-35) | 7.5 V, ±5%, 500 mW, but silicon planar construction; RθJA ≈ 500 °C/W; no radiation hardness claim | Cost-effective for commercial-grade consumer electronics; unsuitable for aerospace or extended temp | Prefer 1N5236BUR-1 where hermeticity, radiation tolerance, or thermal performance on FR4 is critical |
Compared with 1N5236B-1 and BZX55C7V5, the 1N5236BUR-1 offers superior thermal resistance on FR4 (250 vs. ≥300 °C/W), verified radiation hardness, and hermetic glass reliability-making it the only choice for space-qualified or high-stability industrial reference designs.
Availability
1N5236BUR-1 is available at Aetrix Electronics and suitable for precision voltage reference, aerospace sensor biasing, and isolated power supply feedback applications requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N5236BUR-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and high-performance analog and mixed-signal components.
The 1N52xxBUR-1 series was designed specifically for applications demanding hermetic stability, extended temperature operation, and MIL-spec compliance-targeting defense, aerospace, and industrial instrumentation markets.
FAQ
What is the Zener voltage tolerance for 1N5236BUR-1?
The 1N5236BUR-1 has a nominal Zener voltage of 7.5 V with a ±5% tolerance, confirmed in the Electrical Characteristics table on page 3 of T4-LDS-0232-1 Rev. 1. This corresponds to the "B" suffix in the part nomenclature and is measured at IZT = 20 mA and TA = 25 °C.
Is 1N5236BUR-1 RoHS compliant?
Yes, 1N5236BUR-1 is available in RoHS-compliant versions marked with the "e3" suffix (e.g., 1N5236BUR-1e3), as stated in the Part Nomenclature section. RoHS compliance applies to commercial-grade units only; screened versions follow MIL-PRF-19500 requirements and may differ.
What is the maximum steady-state power dissipation for 1N5236BUR-1?
The 1N5236BUR-1 has a steady-state power dissipation rating of 0.5 W, specified under conditions where the end cap temperature remains below 125 °C or ambient temperature stays below 50 °C on FR4 with 1 oz Cu and the recommended footprint (see Figure 2 and Maximum Ratings table).
Does 1N5236BUR-1 require derating above 50 °C ambient?
Yes, 1N5236BUR-1 must be derated linearly above 50 °C ambient temperature when mounted on FR4 with 1 oz Cu, per Figure 2. At 100 °C ambient, power dissipation is reduced to approximately 0.25 W, based on the 250 °C/W junction-to-ambient thermal resistance.
Can 1N5236BUR-1 be used in radiation-intensive environments?
Yes, 1N5236BUR-1 is inherently radiation hard per Microsemi MicroNote 050, validated for total ionizing dose (TID) resilience-making it suitable for satellite, avionics, and nuclear instrumentation applications where parametric shift under irradiation must be minimized.
1N5236BUR-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AA
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 7.5 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 6 Ohms
- Current - Reverse Leakage @ Vr:
- 3 µA @ 6 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AA
1N5236BUR-1 FAQ
1.How can I place an order for 1N5236BUR-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5236BUR-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5236BUR-1 reliable?
The price and inventory of 1N5236BUR-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5236BUR-1 is usually 5 days.
3.What payment methods are accepted for 1N5236BUR-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5236BUR-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5236BUR-1?
1N5236BUR-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5236BUR-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5236BUR-1?
For technical support, including 1N5236BUR-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5236BUR-1 requirements.
6.How does Aetrix verify that 1N5236BUR-1 is sourced from the original manufacturer or authorized distributors?
All 1N5236BUR-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5236BUR-1 meets industry standards.
7.What is the process for return or replacement of 1N5236BUR-1?
All 1N5236BUR-1 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5236BUR-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5236BUR-1 part is unused and in its original packaging.
Return procedure for 1N5236BUR-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5236BUR-1 Tags
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MMSZ4682T1G
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BZT52C15S-7-F
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MM5Z5V1ST1G
onsemi
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