Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N5239BUR-1

Part No.:
1N5239BUR-1
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-213AA
Datasheet:
Aetrix1N5239BUR-1.pdf
Description:
DIODE ZENER 9.1V 500MW DO213AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,438

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N5239BUR-1 from Microsemi is a hermetically sealed, metallurgically bonded glass MELF Zener diode rated for 500 mW power dissipation, with a nominal Zener voltage of 9.1 V at 20 mA test current, ±5% tolerance (B suffix), and +0.068 %/°C temperature coefficient. It serves as a precision voltage reference or shunt regulator in low-power analog circuits, power supply feedback paths, and overvoltage protection stages.

For engineers reviewing the 1N5239BUR-1 datasheet, 1N5239BUR-1 pinout, 1N5239BUR-1 application, or 1N5239BUR-1 equivalent, key selection criteria include its DO-213AA (SOD80) package, 10 Ω dynamic impedance at 20 mA, 3.0 µA max reverse leakage at 6.7 V, and radiation-hardened performance per MicroNote 050.

Technical Context

This device operates in reverse breakdown to maintain stable voltage across varying load currents (IZK = 0.25 mA to IZM ≈ 45 mA), with low capacitance (<2 pF typical) and minimal temperature drift. Its metallurgical bond ensures mechanical robustness and long-term parameter stability under thermal cycling.

The 1N5239BUR-1 exhibits a positive temperature coefficient (+0.068 %/°C), making it suitable for temperature-compensated references when paired with negative-TC components. It is not intended for high-frequency switching or surge clamping - its design targets steady-state regulation within ±50 °C ambient range.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 9.1 V at 20 mA - defines regulation setpoint for feedback loops and reference generation
Power Dissipation (PD) 0.5 W - limits continuous shunt current to ~45 mA at 9.1 V without derating
Zener Impedance (ZZT) 10 Ω at 20 mA - determines output voltage variation under load changes (ΔV ≈ 10 Ω × ΔI)
Reverse Leakage (IR) 3.0 µA max at 6.7 V - ensures negligible error current in high-impedance bias networks
Temp. Coefficient (αVZ) +0.068 %/°C - yields ~6.2 mV/°C drift; enables predictable compensation in mixed-TC designs
Junction Temp. Range –65 °C to +175 °C - supports operation in extended industrial and aerospace environments
Forward Voltage (VF) 1.1 V max at 200 mA - defines forward conduction behavior during transient polarity reversal

Pinout & Package

DO-213AA (SOD80 / MLL34) metallurgically bonded glass MELF package: cylindrical body with tin-lead or RoHS-compliant matte-tin end-cap terminations; cathode identified by single black band; no leads - terminals are axial end caps only.

Pin/Terminal Circuit Role Design Meaning
Cathode End Cap Zener anode connection point in reverse-bias configuration Connected to regulated output node; polarity must be observed - banded end is cathode (negative in forward bias, positive in Zener mode)
Anode End Cap Zener cathode connection point in reverse-bias configuration Connected to reference or ground potential; forms shunt path for excess current during regulation

Key Features

Feature Design Value
Hermetic glass MELF construction Eliminates moisture ingress and parameter drift over time - critical for long-life instrumentation
Metallurgical bonding Ensures low thermal resistance (RθJEC = 100 °C/W) and mechanical integrity under vibration
Radiation hardness Inherently hardened per Microsemi MicroNote 050 - validated for TID > 100 krad(Si) in space-grade variants
Low capacitance <2 pF typical - preserves signal integrity in RF bias networks and high-speed comparator references
MIL-PRF-19500 upscreening option Available with MQ/MX/MV/MSP reliability levels - enables use in defense and avionics programs

Applications

Industrial Power Monitoring Medical Sensor Biasing

Use Scenario: Monitoring DC bus voltage in programmable logic controller (PLC) I/O modules using resistive divider + ADC.

IC Role / Device Role / Timing Role: Shunt reference providing stable 9.1 V threshold for overvoltage detection and scaling.

Use Value: 10 Ω ZZT ensures <±10 mV error across 0–2 mA divider current; hermetic seal prevents calibration drift over 10+ year field life.

Use Scenario: Biasing photodiode transimpedance amplifier in portable pulse oximeter front-end.

IC Role / Device Role / Timing Role: Low-noise voltage reference for op-amp offset nulling and gain-setting network.

Use Value: 3.0 µA max IR avoids injection error into high-Z sensor nodes; <2 pF capacitance prevents phase shift in 100 kHz bandwidth path.

Aerospace Avionics Reference Test Equipment Calibration

Use Scenario: Providing traceable 9.1 V reference in satellite telemetry conditioning circuitry.

IC Role / Device Role / Timing Role: Radiation-hardened shunt regulator stabilizing LDO input in isolated power domain.

Use Value: Inherent TID hardness per MicroNote 050 eliminates need for shielding or redundancy; DO-213AA withstands 20 g shock per MIL-STD-883.

Use Scenario: Embedded reference in handheld multimeter auto-ranging circuitry.

IC Role / Device Role / Timing Role: Precision Zener setting mid-scale thresholds for 3½-digit ADC conversion ranges.

Use Value: ±5% VZ tolerance and +0.068 %/°C TC enable factory calibration to ±0.1% accuracy over 0–50 °C operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N5239B-1 (DO-35) Axial-leaded DO-35 package; identical electrical specs but higher RθJA (300 °C/W vs. 250 °C/W); no MELF ruggedness Suitable for prototyping or through-hole PCBs; unsuitable for high-vibration or surface-mount-only assemblies Select when legacy board compatibility or hand-soldering is required; avoid in automated SMT lines or harsh environments
BZX55C9V1 (Nexperia) DO-35 package; ±5% tolerance; 12 Ω ZZT; 500 mW rating; non-radiation-hardened; RoHS-only Lacks MIL-PRF-19500 screening and radiation tolerance; lower reliability for aerospace/defense use Acceptable for commercial-grade consumer or industrial equipment where cost is primary; not recommended for mission-critical systems

Compared with 1N5239B-1 and BZX55C9V1, the 1N5239BUR-1 delivers superior thermal performance in SMT layouts, inherent radiation hardness, and hermetic reliability - making it the only choice for high-integrity, surface-mount Zener regulation where long-term stability and environmental resilience are mandatory.

Availability

1N5239BUR-1 is available at Aetrix Electronics and suitable for industrial power monitoring, medical sensor biasing, aerospace avionics reference, and test equipment calibration requiring stable component supply, consistent parametric performance, and long-term obsolescence management.

Supply support for 1N5239BUR-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and discrete components.

The 1N52xxBUR-1 series was designed to deliver JEDEC-standard Zener performance in a ruggedized, surface-mount MELF package for mission-critical analog regulation in defense, space, and industrial control systems.

FAQ

What is the Zener voltage tolerance for 1N5239BUR-1?

The "B" in 1N5239BUR-1 denotes a ±5% Zener voltage tolerance at 20 mA test current. This means the actual VZ of any given 1N5239BUR-1 unit falls between 8.65 V and 9.55 V when measured under standard conditions. The tolerance is guaranteed per Microsemi's screening and test protocol, and applies across the full operating temperature range of –65 °C to +175 °C.

Is 1N5239BUR-1 compatible with lead-free reflow soldering?

Yes, 1N5239BUR-1 supports lead-free reflow with a maximum solder temperature of 260 °C for 10 seconds, per MIL-STD-750 Method 2026. Its end caps are plated with RoHS-compliant annealed matte tin (e3 suffix), ensuring reliable wetting and intermetallic formation on OSP- or ENIG-finished PCBs used in modern SMT assembly lines.

Does 1N5239BUR-1 have radiation hardness certification?

Yes - the 1N5239BUR-1 is inherently radiation-hardened per Microsemi MicroNote 050, which documents total ionizing dose (TID) survivability exceeding 100 krad(Si). While commercial-grade 1N5239BUR-1 units are not individually certified, the metallurgically bonded glass MELF structure and process flow ensure this hardness is built into every device, including the standard commercial version.

What is the maximum reverse leakage current for 1N5239BUR-1?

The maximum reverse leakage current (IR) for 1N5239BUR-1 is 3.0 µA when tested at 6.7 V (73.6% of nominal VZ). This value is specified at 25 °C and reflects worst-case leakage under sub-breakdown bias - critical for minimizing error in high-impedance reference dividers and sensor bias networks where leakage could shift operating points.

Can 1N5239BUR-1 be used in place of 1N5239B-1?

Yes, electrically - both share identical Zener voltage, tolerance, and electrical characteristics. However, 1N5239BUR-1 uses a DO-213AA (SOD80) surface-mount MELF package, while 1N5239B-1 uses a DO-35 axial-leaded package. Substitution requires PCB layout change and requalification of thermal performance, as RθJA differs (250 vs. 300 °C/W). Mechanical and reliability profiles are not interchangeable.

1N5239BUR-1 Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-213AA
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
9.1 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
10 Ohms
Current - Reverse Leakage @ Vr:
3 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-213AA

1N5239BUR-1 FAQ

1.How can I place an order for 1N5239BUR-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5239BUR-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5239BUR-1 reliable?

The price and inventory of 1N5239BUR-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5239BUR-1 is usually 5 days.

3.What payment methods are accepted for 1N5239BUR-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5239BUR-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5239BUR-1?

1N5239BUR-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5239BUR-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5239BUR-1?

For technical support, including 1N5239BUR-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5239BUR-1 requirements.

6.How does Aetrix verify that 1N5239BUR-1 is sourced from the original manufacturer or authorized distributors?

All 1N5239BUR-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5239BUR-1 meets industry standards.

7.What is the process for return or replacement of 1N5239BUR-1?

All 1N5239BUR-1 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5239BUR-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5239BUR-1 part is unused and in its original packaging.

Return procedure for 1N5239BUR-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N5239BUR-1 Tags

  • 1N5239BUR-1
  • 1N5239BUR-1 PDF
  • 1N5239BUR-1 Datasheet
  • 1N5239BUR-1 Specifications
  • 1N5239BUR-1 Images
  • Microchip Technology
  • Microchip Technology 1N5239BUR-1
  • Buy 1N5239BUR-1
  • 1N5239BUR-1 Price
  • 1N5239BUR-1 Distributor
  • 1N5239BUR-1 Supplier
  • 1N5239BUR-1 Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER