onsemi 1N5250BRL

Overview

1N5250BRL from ON Semiconductor is a 500 mW, 20 V ±5% axial-lead Zener diode in a hermetically sealed DO-35 (CASE 299) glass package, rated for –65°C to +200°C operation, with 6.2 mA test current, 25 Ω maximum zener impedance at IZT, and 0.1 µA reverse leakage at 15 V. It provides precision voltage regulation in low-power analog reference and overvoltage protection circuits.

For engineers reviewing the 1N5250BRL datasheet, pinout, applications, or equivalent options, key selection criteria include its 20 V nominal zener voltage, DO-35 mechanical compatibility, thermal stability up to +200°C, ESD rating >16 kV HBM, and suitability for space-constrained, high-reliability DC biasing and clamping functions.

Technical Context

This device operates as a silicon-oxide passivated junction Zener regulator, optimized for stable reverse-bias breakdown at 20 V with minimal temperature drift (±0.086 %/°C). Its double-slug, metallurgically bonded construction ensures robust thermal transfer and hermetic environmental sealing.

The 1N5250BRL delivers regulated voltage under steady-state DC conditions with 500 mW power dissipation at TL ≤ 75°C, derating linearly at 4.0 mW/°C above that temperature. Its cathode polarity band and axial lead configuration support manual or automated through-hole assembly in compact analog subsystems.

Key Specifications

Pinout & Package

Package: DO-35 (CASE 299), axial-lead, hermetically sealed glass, double-slug construction with corrosion-resistant leads and cathode polarity band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with 1N5250BRL, the 1N5250B offers identical performance in a different shipping format, while BZX55-C20 trades minor regulation precision for broader vendor availability and lower unit cost in less demanding applications.

Availability

1N5250BRL is available at Aetrix Electronics and suitable for low-power reference supplies, overvoltage clamping, and DC bias generation requiring stable component supply across automotive, industrial, and test equipment programs.

Supply support for 1N5250BRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 1N52xxB series was designed specifically for high-reliability, low-power voltage regulation in space-constrained, thermally demanding applications-emphasizing hermetic sealing, wide temperature operation, and JEDEC-standard compatibility.

FAQ

What is the nominal zener voltage and tolerance of the 1N5250BRL?

The 1N5250BRL has a nominal zener voltage of 20 V with a tolerance of ±5%, measured at 6.2 mA test current (I_ZT) under thermal equilibrium conditions at 30°C lead temperature. This specification ensures predictable regulation in precision analog circuits where stable reference voltage is critical. The 1N5250BRL maintains this voltage across its full operating temperature range of –65°C to +200°C.

What package type and mounting configuration does the 1N5250BRL use?

The 1N5250BRL uses the DO-35 (CASE 299) axial-lead, hermetically sealed glass package with double-slug construction. It features a cathode polarity band for orientation identification and supports any mounting position. Its 3/8″ lead length is standardized for thermal derating calculations, and leads are readily solderable with a maximum soldering temperature of 230°C for 10 seconds at 1/16″ from the case.

How does the 1N5250BRL perform under elevated temperature conditions?

The 1N5250BRL is rated for continuous operation from –65°C to +200°C, with power dissipation derated linearly above 75°C at 4.0 mW/°C. Its zener voltage temperature coefficient is ±0.086 %/°C, ensuring predictable drift behavior. Thermal resistance from junction to lead (θ_JL) is approximately 30–40°C/W depending on mounting method, allowing accurate junction temperature estimation using measured lead temperature.

What is the maximum reverse leakage current for the 1N5250BRL, and at what voltage is it specified?

The 1N5250BRL exhibits a maximum reverse leakage current (I_R) of 0.1 µA at a reverse voltage (V_R) of 15 V, measured at 25°C ambient. This ultra-low leakage supports energy-sensitive applications such as battery-backed sensors and low-quiescent-current power management circuits. Leakage remains well below 1 µA even at elevated temperatures up to +125°C.

Is the 1N5250BRL suitable for surge protection applications, and what are its pulse handling limits?

The 1N5250BRL supports nonrepetitive surge events per Figure 7a, with peak surge power up to ~100 W for 1 ms pulses at 20 V. Its robust DO-35 glass package and metallurgical bonding withstand transient overstress better than plastic-packaged alternatives. However, it is not intended for repetitive surge suppression; for such use, dedicated TVS diodes like SMAJ20A are recommended. The 1N5250BRL serves best in steady-state regulation and infrequent clamping roles.