onsemi 1N5253B

Overview

1N5253B from ON Semiconductor is a 25 V ±5% tolerance silicon Zener diode in DO-35 glass package, rated for 500 mW power dissipation at 25°C, with 35 Ω dynamic impedance at 20 mA test current and 0.1 μA maximum reverse leakage at 19 V. It provides precision voltage regulation in low-power analog reference and overvoltage protection circuits.

For engineers reviewing the 1N5253B datasheet, pinout, applications, or equivalent options, this device serves as a standard through-hole Zener reference in power supply feedback loops, sensor biasing networks, and voltage clamp stages where stable 25 V regulation under low-current conditions is required.

Technical Context

The 1N5253B operates as a two-terminal voltage reference diode relying on controlled Zener breakdown in its p-n junction. Its 25 V nominal Zener voltage is specified at I_Z = 20 mA with ±5% tolerance, and it exhibits a positive temperature coefficient of +0.088 %/°C - typical for devices above 5.6 V - enabling predictable drift behavior in thermal-varying environments.

Designed for DC or low-frequency regulation, it features a 500 mW absolute maximum power rating derated linearly above 50°C (4.0 mW/°C), and supports junction temperatures from −65°C to +200°C. Its DO-35 hermetically sealed glass package ensures long-term stability and low leakage performance.

Key Specifications

Pinout & Package

DO-35 glass axial package: hermetically sealed, 0.533 mm diameter body, 4.56 mm overall length, cathode identified by color band. Two terminals only: anode and cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N5253B, the 1N4749A offers higher power capacity but differs in test current and package, while BZX55-C24 matches the DO-35 form factor but trades regulation precision for cost - making 1N5253B optimal for 25 V, low-drift, space-constrained designs.

Availability

1N5253B is available at Aetrix Electronics and suitable for power supply feedback references, sensor bias networks, overvoltage clamps, and programmable threshold detectors requiring stable component supply and consistent Zener voltage performance.

Supply support for 1N5253B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and cloud infrastructure markets.

The 1N52xxB series is part of ON Semiconductor's legacy Zener diode portfolio designed for general-purpose voltage regulation and protection in cost-sensitive, high-reliability applications.

FAQ

What is the nominal Zener voltage and tolerance of the 1N5253B?

The 1N5253B has a nominal Zener voltage of 25 V with a tolerance of ±5%, meaning its actual V_Z falls between 23.75 V and 26.25 V when measured at I_Z = 20 mA and T_A = 25°C. This tolerance is guaranteed per ON Semiconductor's 1N5221B–1N5263B datasheet Rev. 3, December 2018. The 1N5253B maintains this specification across its qualified temperature range.

What is the maximum power dissipation rating for the 1N5253B and how does it change with temperature?

The 1N5253B is rated for 500 mW maximum power dissipation at ambient temperature (T_A) = 25°C. Above 50°C, it must be derated linearly at 4.0 mW/°C. This means at 75°C ambient, its usable power drops to 400 mW. These limits ensure safe junction temperature operation within the −65°C to +200°C range. The 1N5253B's thermal performance is defined in the Absolute Maximum Ratings table of its official datasheet.

Does the 1N5253B have a specified Zener impedance, and what does that value mean for circuit design?

Yes, the 1N5253B has a typical Zener impedance (Z_Z) of 35 Ω measured at I_Z = 20 mA. This value indicates how much the Zener voltage changes per unit change in current - a lower Z_Z means better regulation. In practice, a 1 mA load variation causes only ~35 mV shift in output voltage. This makes the 1N5253B suitable for applications like feedback references where tight voltage stability is critical. The 1N5253B's Z_Z is confirmed in the Electrical Characteristics table.

What is the reverse leakage current specification for the 1N5253B, and at what voltage is it tested?

The 1N5253B specifies a maximum reverse leakage current (I_R) of 0.1 μA at a reverse voltage (V_R) of 19 V. This ultra-low leakage ensures minimal error in high-impedance bias networks and preserves battery life in always-on sensor circuits. The value is guaranteed across the full operating temperature range and appears in the Electrical Characteristics table of the ON Semiconductor 1N5221B–1N5263B datasheet. The 1N5253B's leakage performance directly supports precision analog design requirements.

What package type does the 1N5253B use, and how is polarity marked?

The 1N5253B uses the DO-35 glass axial package - a hermetically sealed, 4.56 mm long, 0.533 mm diameter through-hole device. Polarity is marked by a single color band (typically black or dark gray) located near the cathode end. When installed, the banded end connects to the higher-potential node in Zener regulation mode. This marking convention and mechanical outline are standardized per JEDEC DO-204AH and documented in the 1N5253B's packaging drawings. The 1N5253B's DO-35 form factor ensures compatibility with legacy assembly processes.