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Microchip Technology 1N5260BUR-1/TR

Part No.:
1N5260BUR-1/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-213AA
Datasheet:
Aetrix1N5260BUR-1/TR.pdf
Description:
DIODE ZENER 43V 500MW DO213AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,963

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Product details

Overview

1N5260BUR-1/TR from Microsemi is a surface-mount 43 V, 500 mW Zener diode in DO-213AA (SOD80) MELF package with ±5% tolerance, 3.0 mA test current, and 93 Ω dynamic impedance at IZT, used for precision voltage regulation in power supply reference and overvoltage protection circuits.

For engineers reviewing the 1N5260BUR-1/TR datasheet, 1N5260BUR-1/TR pinout, 1N5260BUR-1/TR application, or 1N5260BUR-1/TR equivalent, this page delivers verified electrical specs, thermal derating behavior, RoHS-compliant packaging details, and direct alternatives for industrial power management design.

Technical Context

This device operates as a reverse-biased voltage reference with a nominal Zener voltage of 43 V at 3.0 mA, exhibiting a positive temperature coefficient of +0.095 %/°C and maximum reverse leakage of 0.1 µA at 31 V. Its metallurgically bonded glass construction ensures hermetic sealing and radiation hardness per MicroNote 050.

Thermal performance is defined by RθJA = 250 °C/W on FR4 (1 oz Cu) and RθJEC = 100 °C/W to end cap, with power derating beginning at TA > 50 °C or TEC > 125 °C. Forward voltage is capped at 1.1 V @ 200 mA.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 43 V ±5% at 3.0 mA - sets stable reference point for feedback loops and clamp thresholds
Power Dissipation (PD) 0.5 W - limits continuous regulation current to ~11.6 mA at 43 V without heatsinking
Dynamic Impedance (ZZT) 93 Ω at IZT = 3.0 mA - determines output voltage variation under load transients
Reverse Leakage (IR) ≤0.1 µA at 31 V - ensures minimal quiescent current in high-impedance bias networks
Temp. Coefficient (αVZ) +0.095 %/°C - predicts +40.85 mV/°C drift, critical for temperature-stable references
Package DO-213AA (SOD80/MELF) - cylindrical glass body with end-cap terminations, RoHS-compliant matte-tin plating
Junction Temp. Range –65 °C to +175 °C - supports operation in extended industrial and aerospace environments

Pinout & Package

DO-213AA (SOD80) MELF package: hermetically sealed glass cylinder with two solderable end caps; cathode identified by single black band; polarity requires banded end to be positive during Zener operation.

Pin/Terminal Circuit Role Design Meaning
Anode (unbanded end) Reference ground node Connected to system ground or low-side return path; carries full Zener current during regulation
Cathode (banded end) Regulated output node Provides stable 43 V reference; must be biased positive relative to anode to maintain breakdown conduction

Key Features

Feature Design Value
Metallurgically bonded glass construction Enables hermetic sealing and intrinsic radiation hardness per MicroNote 050, suitable for space-grade analog circuits
Minimal capacitance (typ. <1.5 pF) Preserves high-frequency stability in RF bias networks and fast-switching clamp applications
ESD insensitivity (MIL-STD-750 Method 1020) Eliminates need for external ESD protection in handling and board-level assembly
RoHS-compliant annealed matte-tin plating Supports lead-free reflow (260 °C, 10 s) and eliminates tin whisker risk in long-life deployments
MIL-PRF-19500 up-screening option Enables qualification for military/aerospace use with traceable lot documentation and extended testing

Applications

Power Supply Reference Overvoltage Clamp

Use Scenario: Providing stable 43 V reference for TL431-based adjustable regulators or op-amp feedback networks.

IC Role / Device Role / Timing Role: Precision voltage reference element setting output voltage accuracy and line/load regulation.

Use Value: ±5% initial tolerance and +0.095 %/°C TC enable ≤±8% total drift over –40 to +85 °C ambient, meeting industrial PSU specs.

Use Scenario: Clamping transient surges on 36 V DC bus lines in automotive body control modules.

IC Role / Device Role / Timing Role: Shunt protection device diverting excess energy to ground when bus exceeds 43 V threshold.

Use Value: 0.5 W power rating sustains 11.6 mA clamping current continuously; low 93 Ω ZZT ensures tight voltage holdover during fast spikes.

Temperature-Stable Bias Network Radiation-Hardened Sensor Interface

Use Scenario: Generating bias current for high-precision current sources in medical instrumentation amplifiers.

IC Role / Device Role / Timing Role: Stable voltage source establishing fixed VBE multiplier or resistor-divider ratio.

Use Value: Low 0.1 µA leakage at 31 V prevents loading of high-impedance bias nodes; minimal capacitance avoids phase shift in feedback paths.

Use Scenario: Voltage reference in satellite payload sensor front-ends exposed to total ionizing dose (TID).

IC Role / Device Role / Timing Role: Radiation-hardened Zener providing invariant reference despite cumulative TID exposure.

Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding or redundancy, reducing SWaP-C in LEO missions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N5260B-1/TR Same 43 V, ±5%, 0.5 W rating but in axial DO-35 (not surface-mount); no metallurgical bond; non-RoHS default Requires through-hole PCB layout; unsuitable for automated SMT assembly or high-reliability hermetic requirements Select only if legacy through-hole compatibility or cost sensitivity outweighs SMT efficiency and radiation hardness needs
BZX55C43-TR 43 V, ±5%, 0.5 W in DO-35; silicon planar construction; typical ZZT = 100 Ω; no radiation hardness claim Lacks MIL-PRF-19500 screening path and intrinsic radiation tolerance; higher capacitance (~2 pF) Prefer for commercial consumer designs where cost and availability dominate; avoid in aerospace or high-TID environments

Compared with 1N5260B-1/TR and BZX55C43-TR, the 1N5260BUR-1/TR uniquely combines SMT DO-213AA packaging, metallurgical bonding, RoHS compliance, and documented radiation hardness-making it the only choice for space-qualified or high-reliability industrial reference designs requiring hermetic integrity.

Availability

1N5260BUR-1/TR is available at Aetrix Electronics and suitable for power supply reference, overvoltage protection, temperature-stable bias networks, and radiation-hardened sensor interface applications requiring stable component supply across extended temperature and lifecycle demands.

Supply support for 1N5260BUR-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.

The 1N52xxBUR-1 series was designed to deliver JEDEC-standard Zener performance in hermetically sealed, surface-mount MELF packages for applications demanding reliability, thermal stability, and radiation tolerance beyond commercial-grade alternatives.

FAQ

What is the Zener voltage tolerance and test current for the 1N5260BUR-1/TR?

The 1N5260BUR-1/TR has a nominal Zener voltage of 43 V with a ±5% tolerance, measured at a test current (IZT) of 3.0 mA. This tolerance corresponds to the "B" suffix in the part nomenclature and defines the initial voltage accuracy before temperature and aging effects.

Is the 1N5260BUR-1/TR RoHS compliant and compatible with lead-free reflow?

Yes, the 1N5260BUR-1/TR features RoHS-compliant annealed matte-tin plating on its end caps and is qualified for lead-free reflow soldering at 260 °C for 10 seconds per MIL-STD-750 Method 2026, making it suitable for modern environmentally regulated manufacturing.

What is the maximum reverse leakage current specification for the 1N5260BUR-1/TR?

The 1N5260BUR-1/TR specifies a maximum reverse leakage current (IR) of 0.1 µA at a reverse voltage (VR) of 31 V, ensuring minimal parasitic current draw in high-impedance reference and bias circuits across its operating temperature range.

Does the 1N5260BUR-1/TR have radiation hardness certification?

Yes, the 1N5260BUR-1/TR exhibits inherent radiation hardness per Microsemi MicroNote 050 due to its metallurgically bonded glass construction, though formal TID or SEE test reports require separate qualification documentation from Microchip.

What is the thermal resistance and power derating behavior of the 1N5260BUR-1/TR?

The 1N5260BUR-1/TR has a junction-to-ambient thermal resistance (RθJA) of 250 °C/W on FR4 with 1 oz copper and begins derating linearly above 50 °C ambient or 125 °C end-cap temperature, reaching zero power at 175 °C junction temperature.

1N5260BUR-1/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-213AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
43 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
93 Ohms
Current - Reverse Leakage @ Vr:
100 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-213AA

1N5260BUR-1/TR FAQ

1.How can I place an order for 1N5260BUR-1/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5260BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5260BUR-1/TR reliable?

The price and inventory of 1N5260BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5260BUR-1/TR is usually 5 days.

3.What payment methods are accepted for 1N5260BUR-1/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5260BUR-1/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5260BUR-1/TR?

1N5260BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5260BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5260BUR-1/TR?

For technical support, including 1N5260BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5260BUR-1/TR requirements.

6.How does Aetrix verify that 1N5260BUR-1/TR is sourced from the original manufacturer or authorized distributors?

All 1N5260BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5260BUR-1/TR meets industry standards.

7.What is the process for return or replacement of 1N5260BUR-1/TR?

All 1N5260BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5260BUR-1/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5260BUR-1/TR part is unused and in its original packaging.

Return procedure for 1N5260BUR-1/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N5260BUR-1/TR Tags

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