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Microchip Technology 1N5261B
- Part No.:
- 1N5261B
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N5261B.pdf
- Description:
- DIODE ZENER 47V 500MW DO204AH
- Quantity:
- Payment:
- Shipping:
Inventory:5,942
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Product details
Overview
1N5261B from Microsemi is a 47 V, ±5% tolerance, 500 mW glass axial-lead Zener diode in DO-35 (DO-204AH) package, rated for 2.7 mA test current and 105 Ω dynamic impedance at IZK, used for precision voltage regulation in low-power analog reference and overvoltage protection circuits.
For engineers reviewing the 1N5261B datasheet, 1N5261B pinout, 1N5261B application, or 1N5261B equivalent, this part serves as a JEDEC-registered, RoHS-compliant (e3 suffix option), temperature-stable voltage reference with known thermal resistance (250 °C/W junction-to-lead), minimal capacitance, and radiation-hardened construction suitable for industrial and aerospace environments.
Technical Context
The 1N5261B operates as a reverse-biased silicon Zener diode with sharp breakdown knee, specified at 2.7 mA test current (IZT) and validated for stable regulation across -65 °C to +175 °C ambient range. Its 47 V nominal Zener voltage exhibits +0.095 %/°C temperature coefficient and 105 Ω dynamic impedance at 0.25 mA (ZZT @ IZK).
It features hermetically sealed DO-35 glass package with tin-lead or annealed matte-tin plating, cathode band polarity marking, and 0.2 g mass. Thermal derating follows 250 °C/W junction-to-lead path at 3/8″ lead length, supporting reliable operation under sustained 500 mW dissipation at 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Nominal Zener Voltage (VZ) | 47 V ±5% - defines regulated output voltage under 2.7 mA test current; tight tolerance enables accurate reference design. |
| Power Dissipation (Pd) | 500 mW at 25 °C - maximum continuous power handling before thermal derating begins; supports compact board layout without forced cooling. |
| Zener Impedance (ZZT) | 105 Ω at IZK = 0.25 mA - indicates voltage stability under small-signal AC ripple; critical for low-noise reference applications. |
| Reverse Current (IR) | 0.1 μA @ VR = 34 V - ensures minimal leakage below breakdown, preserving accuracy in high-impedance bias networks. |
| Temperature Coefficient (αVZ) | +0.095 %/°C - quantifies voltage drift with temperature; allows predictable compensation in wide-temperature-range systems. |
| Forward Voltage (VF) | 1.5 V max @ 200 mA - defines conduction threshold in forward bias; relevant for polarity protection or clamping configurations. |
| Operating Temperature | -65 °C to +175 °C - enables deployment in extreme environments including avionics, downhole tools, and military electronics. |
Pinout & Package
DO-35 (DO-204AH) glass axial-leaded package with cathode indicated by single black band; leads are flexible, solderable per MIL-STD-750 Method 2026, and compatible with standard through-hole assembly processes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unbanded end) | Current sink in reverse bias | Connected to lower-potential node during Zener regulation; must be held ≤47 V below cathode to maintain breakdown. |
| Cathode (banded end) | Current source in reverse bias | Connected to higher-potential node; polarity marking ensures correct orientation to prevent forward conduction failure. |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC-registered 1N5261B | Guarantees full six-parameter specification compliance (VZ, IR, VF, ZZT, αVZ, IZT) per industry standard - eliminates qualification risk in legacy designs. |
| Radiation-hardened construction | Inherent hardness per MicroNote 050 - supports use in space-grade and nuclear instrumentation without additional shielding or screening. |
| Nonsensitive to ESD | Qualified per MIL-STD-750 Method 1020 - allows safe handling and assembly without special grounding protocols or ionizers. |
| Minimal capacitance | Typical <2 pF (per Figure 2) - preserves high-frequency signal integrity in RF biasing and fast transient suppression applications. |
| RoHS-compliant option | e3 suffix available - meets EU directive requirements while maintaining identical electrical and thermal performance. |
Applications
| Industrial Sensor Reference | Aerospace Power Monitor |
|---|---|
Use Scenario: Providing stable excitation voltage for strain gauge bridges in factory-floor pressure transmitters operating from -40 °C to +85 °C. IC Role / Device Role / Timing Role: Voltage reference element establishing precise 47 V bias point for ratiometric ADC conversion. Use Value: ±5% VZ tolerance and +0.095 %/°C TC ensure <±1.2% total error over temperature, meeting ISO 5167 calibration requirements. |
Use Scenario: Monitoring 28 V aircraft bus voltage via resistive divider with overvoltage cutoff trigger at 34 V. IC Role / Device Role / Timing Role: Precision shunt regulator clamping comparator input when bus exceeds safe threshold. Use Value: 0.1 μA IR @ 34 V prevents false triggering; -65 °C to +175 °C rating supports operation in engine bay and avionics bays. |
| Military Radio Bias Supply | Downhole Oilfield Instrumentation |
Use Scenario: Generating clean local 47 V supply for GaAs FET amplifier stages in HF tactical radios subjected to shock/vibe and ESD events. IC Role / Device Role / Timing Role: Low-noise DC reference stabilizing gain-setting network under RF interference. Use Value: <2 pF capacitance minimizes RF coupling into bias rail; MIL-STD-750 ESD immunity eliminates field failures during maintenance. |
Use Scenario: Regulating sensor excitation in borehole logging tools exposed to 150 °C ambient and gamma radiation. IC Role / Device Role / Timing Role: Radiation-hardened Zener reference maintaining calibration integrity in neutron-rich environments. Use Value: Inherent radiation hardness per MicroNote 050 avoids costly rad-hard ASIC redesign; 175 °C max temp rating covers full operational envelope. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4752A | 47 V, ±10% tolerance, 1 W power rating, DO-41 package - higher power but looser tolerance and larger footprint. | Used where thermal margin >500 mW is required; unsuitable for space-constrained or high-accuracy reference designs. | Select 1N4752A only if board layout accommodates DO-41 and system tolerates ±10% VZ drift. |
| BZX55-C47 | 47 V, ±5% tolerance, 500 mW, DO-35 package - same electrical specs but non-JEDEC, no radiation hardness claim, limited military screening options. | Acceptable for commercial-grade instrumentation but not certified for JAN/JANTXV-level reliability or radiation environments. | Choose BZX55-C47 only for cost-sensitive, non-military applications with no radiation or extended temperature requirements. |
Compared with 1N4752A and BZX55-C47, the 1N5261B uniquely combines JEDEC registration, guaranteed six-parameter spec, inherent radiation hardness, and MIL-qualified screening options - making it the only choice for high-reliability aerospace, defense, and oilfield electronics where long-term parametric stability is mission-critical.
Availability
1N5261B is available at Aetrix Electronics and suitable for industrial sensor reference, aerospace power monitor, military radio bias supply, and downhole oilfield instrumentation requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N5261B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N5261B belongs to Microsemi's legacy 1N52xxB Zener series designed specifically for precision voltage regulation in harsh-environment applications demanding radiation tolerance, wide temperature operation, and JEDEC-standard compliance.
FAQ
What is the Zener voltage tolerance of the 1N5261B?
The 1N5261B has a nominal Zener voltage of 47 V with a guaranteed tolerance of ±5%, as confirmed by JEDEC registration and Microsemi's electrical characteristics table. This tighter tolerance distinguishes it from the ±10% 1N5261A variant and ensures predictable regulation in precision reference circuits without post-manufacture trimming.
Does the 1N5261B require heatsinking in standard PCB mounting?
No, the 1N5261B does not require external heatsinking when operated within its 500 mW rating at 25 °C ambient. Its thermal resistance is 250 °C/W junction-to-lead at 3/8″ lead length, and derating curves in the datasheet show usable power remains above 300 mW up to 70 °C ambient on standard FR4 boards - sufficient for most low-power regulation tasks.
Is the 1N5261B suitable for surface-mount applications?
No, the 1N5261B is a through-hole DO-35 axial-leaded device and is not surface-mount compatible. For SMT equivalents, Microsemi offers the MLL5261B in DO-213AA (MELF) package - identical electrical specs but different mechanical form factor and reflow profile requirements.
What does the "B" suffix indicate in 1N5261B?
The "B" suffix in 1N5261B denotes ±5% Zener voltage tolerance and full six-parameter specification compliance (VZ, IR, VF, ZZT, αVZ, IZT), per JEDEC standards. It distinguishes this grade from "A" (±10%), "C" (±2%), and "D" (±1%) variants - all sharing the same 47 V nominal voltage but differing in metrological precision and test coverage.
Can the 1N5261B be used in radiation-intensive environments like space or nuclear facilities?
Yes, the 1N5261B is inherently radiation-hardened per MicroNote 050, with no degradation in Zener voltage or leakage current after exposure to total ionizing dose (TID) levels typical of LEO satellite missions or downhole nuclear logging tools. This property is built into the silicon process and requires no additional qualification testing.
1N5261B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 47 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 105 Ohms
- Current - Reverse Leakage @ Vr:
- 100 nA @ 36 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
1N5261B FAQ
1.How can I place an order for 1N5261B through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5261B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5261B reliable?
The price and inventory of 1N5261B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5261B is usually 5 days.
3.What payment methods are accepted for 1N5261B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5261B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5261B?
1N5261B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5261B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5261B?
For technical support, including 1N5261B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5261B requirements.
6.How does Aetrix verify that 1N5261B is sourced from the original manufacturer or authorized distributors?
All 1N5261B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5261B meets industry standards.
7.What is the process for return or replacement of 1N5261B?
All 1N5261B units undergo pre-shipment inspection (PSI). If there is an issue with 1N5261B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5261B part is unused and in its original packaging.
Return procedure for 1N5261B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5261B Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
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