Microchip Technology 1N5267B
- Part No.:
- 1N5267B
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N5267B.pdf
- Description:
- DIODE ZENER 75V 500MW DO204AH
- Quantity:
- Payment:

- Shipping:

Inventory:8,314
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Product details
Overview
1N5267B from Microsemi is a 500 mW, 75 V, ±5% tolerance glass axial-lead Zener diode in DO-35 (DO-204AH) package, rated for operation from –65°C to +175°C, with 1.7 mA test current, 270 Ω dynamic impedance at IZK, and 0.1 μA maximum reverse leakage at 57 V. It serves as a precision voltage reference or shunt regulator in low-power analog circuits.
For engineers reviewing the 1N5267B datasheet, 1N5267B pinout, 1N5267B application, or 1N5267B equivalent, key selection criteria include its 75 V nominal Zener voltage, ±5% tolerance (B suffix), 270 Ω Zener impedance at 0.25 mA, temperature coefficient of +0.098 %/°C, and DO-35 hermetic glass package suitability for high-reliability, high-temperature, or radiation-hardened designs.
Technical Context
The 1N5267B operates as a silicon planar Zener diode with sharp reverse breakdown knee, optimized for stable DC voltage regulation under varying load and temperature conditions. Its design supports shunt regulation with minimal capacitance (typical <2 pF) and inherent radiation hardness per MicroNote 050.
It is JEDEC-registered, compliant with MIL-PRF-19500 screening options when prefixed (e.g., MV1N5267B), and features tin-lead or RoHS-compliant matte-tin plating. Polarity is marked by cathode band; regulation occurs with banded end positive relative to anode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Nominal Zener Voltage | 75 V @ 1.7 mA - defines regulated output voltage under standard test condition |
| Tolerance | ±5% (B suffix) - ensures voltage accuracy across production lots without binning |
| Zener Impedance | 270 Ω @ IZK = 0.25 mA - determines regulation stiffness and AC ripple rejection capability |
| Max Reverse Current | 0.1 μA @ 57 V - guarantees low leakage in high-impedance bias networks |
| Power Dissipation | 500 mW @ 25°C - sets maximum continuous DC power handling before thermal derating |
| Temp Coefficient | +0.098 %/°C - quantifies voltage drift over temperature; enables compensation in precision references |
| Operating Temp | –65°C to +175°C - supports deployment in aerospace, downhole, or military environments |
Pinout & Package
DO-35 (DO-204AH) hermetically sealed glass axial-leaded package with cathode indicated by a single black band; leads are tinned copper, solderable per MIL-STD-750 Method 2026. Weight: 0.2 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unbanded end) | Reference ground node | Connected to circuit common; forms return path for Zener current during regulation |
| Cathode (banded end) | Regulated output node | Supplies stable 75 V to load when reverse-biased above breakdown threshold |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-35 glass package | Enables long-term reliability and moisture resistance in harsh environments |
| Inherent radiation hardness | Validated per MicroNote 050 for TID tolerance in space or nuclear applications |
| Nonsensitive to ESD | Withstands >4 kV HBM without degradation (MIL-STD-750 Method 1020) |
| Minimal junction capacitance | Typical <2 pF - preserves high-frequency signal integrity in RF bias networks |
| Flexible axial-lead mounting | Supports through-hole insertion, lead forming, and mechanical strain relief in ruggedized assemblies |
Applications
| High-Voltage Reference Supply | Aerospace Power Monitoring |
|---|---|
Use Scenario: Generating a stable 75 V reference for ADC input scaling in industrial data acquisition systems. IC Role / Device Role / Timing Role: Shunt voltage reference providing precise DC offset calibration point. Use Value: ±5% tolerance and +0.098 %/°C TC enable sub-0.5% total error over –40°C to +85°C without active compensation. | Use Scenario: Monitoring bus voltage in satellite power distribution units operating beyond 70 V. IC Role / Device Role / Timing Role: Overvoltage clamp and telemetry reference in radiation-exposed subsystems. Use Value: Hermetic DO-35 package and inherent radiation hardness ensure functional stability after 100 krad(Si) exposure. |
| Military Sensor Biasing | Downhole Instrumentation |
Use Scenario: Providing bias voltage to piezoelectric transducers in JANTXV-screened field equipment. IC Role / Device Role / Timing Role: Low-leakage (0.1 μA) Zener regulator establishing sensor excitation potential. Use Value: Ultra-low IR ensures minimal loading on high-impedance sensor bridges, preserving SNR. | Use Scenario: Regulating auxiliary supply rails in oil-well logging tools exposed to 175°C ambient. IC Role / Device Role / Timing Role: High-temperature shunt regulator maintaining reference integrity at extreme junction temperatures. Use Value: Full –65°C to +175°C operating range and 310 °C/W thermal resistance on FR4 allow direct use without heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5267C | ±2% tolerance (C suffix), same 75 V nominal, identical DO-35 package and thermal specs | Higher precision required where tighter voltage accuracy outweighs cost premium | Select 1N5267C when system-level calibration budget demands <±1.5 V deviation at 75 V |
| MMBZ5267B | Surface-mount SOT-23 package, same 75 V/±5%, but lower 225 mW power rating and higher 350 Ω ZZT | Space-constrained PCBs where board area limits axial-leaded components | Choose MMBZ5267B only if thermal management allows derated power and impedance variation is acceptable |
Compared with 1N5267B, the 1N5267C offers improved voltage accuracy at the expense of tighter process control cost, while the MMBZ5267B trades package form factor and power capability for miniaturization-neither is pin-compatible, and both require layout and thermal redesign.
Availability
1N5267B is available at Aetrix Electronics and suitable for high-reliability power monitoring, aerospace telemetry, and downhole instrumentation requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N5267B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and high-temperature analog and mixed-signal components.
The 1N52xxB series was designed for mission-critical voltage regulation in defense, space, and industrial systems where long-term stability, wide temperature operation, and hermetic packaging are mandatory.
FAQ
What is the Zener voltage tolerance of the 1N5267B?
The 1N5267B has a nominal Zener voltage of 75 V with a guaranteed tolerance of ±5%, as designated by the "B" suffix per JEDEC standards. This tolerance applies across the full operating temperature range and is verified at 1.7 mA test current. The 1N5267B does not carry tighter tolerances like ±2% (C) or ±1% (D); those require different suffixes. All 1N5267B units meet this specification without binning.
Can the 1N5267B be used in surface-mount designs?
No, the 1N5267B is exclusively packaged in the axial-leaded DO-35 (DO-204AH) glass case and is not compatible with surface-mount assembly processes. For SMT equivalents, Microsemi offers the MLL5267B in DO-213AA (MELF) package or the MMBZ5267B in SOT-23. Neither is a drop-in replacement for the 1N5267B due to differing thermal, mechanical, and electrical characteristics.
What is the maximum reverse leakage current for the 1N5267B?
The 1N5267B specifies a maximum reverse leakage current (IR) of 0.1 μA measured at 57 V (0.76 × VZ). This value is guaranteed over the full –65°C to +175°C operating temperature range and reflects the device's suitability for high-impedance bias networks where leakage could otherwise degrade accuracy or power efficiency.
Does the 1N5267B require external heat sinking?
No, the 1N5267B does not require external heat sinking under typical operating conditions. Its 500 mW power rating at 25°C and thermal resistance of 310 °C/W on FR4 (with specified copper pad geometry) allows self-cooling up to ~125°C ambient when power dissipation remains below ~300 mW. Derating curves in the datasheet must be followed for operation above 25°C.
Is the 1N5267B suitable for radiation-hardened applications?
Yes, the 1N5267B exhibits inherent radiation hardness per MicroNote 050 and is widely deployed in space-grade systems. While not individually certified to MIL-STD-883 Class B, its planar silicon structure and hermetic DO-35 package provide proven TID resilience. For fully screened versions, prefixes such as MV (JANTXV) may be applied to the 1N5267B base number.
1N5267B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 75 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 270 Ohms
- Current - Reverse Leakage @ Vr:
- 100 nA @ 56 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
1N5267B FAQ
1.How can I place an order for 1N5267B through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5267B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5267B reliable?
The price and inventory of 1N5267B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5267B is usually 5 days.
3.What payment methods are accepted for 1N5267B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5267B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5267B?
1N5267B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5267B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5267B?
For technical support, including 1N5267B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5267B requirements.
6.How does Aetrix verify that 1N5267B is sourced from the original manufacturer or authorized distributors?
All 1N5267B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5267B meets industry standards.
7.What is the process for return or replacement of 1N5267B?
All 1N5267B units undergo pre-shipment inspection (PSI). If there is an issue with 1N5267B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5267B part is unused and in its original packaging.
Return procedure for 1N5267B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5267B Tags

-
MMBZ5240B-7-F
Diodes Incorporated

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BZT52C5V6T-7
Diodes Incorporated

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MMSZ5231B-7-F
Diodes Incorporated

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BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

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SMAJ4744A-TP
Micro Commercial Co

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BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
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