Microchip Technology 1N5272BE3/TR
- Part No.:
- 1N5272BE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N5272BE3/TR.pdf
- Description:
- DIODE ZENER 110V 500MW DO204AH
- Quantity:
- Payment:

- Shipping:

Inventory:5,852
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Product details
Overview
1N5272BE3/TR from Microsemi is a 500 mW, 110 V nominal Zener diode in DO-35 glass axial-leaded package with ±5% voltage tolerance (B suffix), 1.1 mA test current, and 750 Ω dynamic impedance at 0.25 mA. It operates from −65 °C to +175 °C and regulates voltage in low-power reference and protection circuits for industrial power supplies.
For engineers reviewing the 1N5272BE3/TR datasheet, 1N5272BE3/TR pinout, 1N5272BE3/TR application, or 1N5272BE3/TR equivalent, key selection factors include Zener voltage stability over temperature, low leakage (<0.1 µA at 88 V), RoHS-compliant matte-tin plating, and tape-and-reel packaging for automated assembly.
Technical Context
This discrete Zener diode functions as a two-terminal voltage reference device, operating in reverse breakdown with cathode-banded polarity. Its regulation relies on controlled avalanche mechanism above 6 V, delivering stable 110 V output under 1.1 mA test current and maintaining <±0.110 %/°C temperature coefficient across −65 °C to +175 °C.
The DO-35 package provides hermetic glass sealing, 250 °C/W junction-to-lead thermal resistance at 10 mm lead length, and ESD insensitivity per MIL-STD-750 Method 1020. Forward voltage is ≤1.5 V at 200 mA, and capacitance remains minimal per Figure 2 of the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Nominal Zener Voltage | 110 V ±5% - precise regulation point for high-voltage reference and clamp circuits |
| Power Dissipation | 500 mW at 25 °C - defines maximum continuous power handling before thermal derating |
| Zener Test Current | 1.1 mA - standardized bias condition for measuring VZ and dynamic impedance |
| Dynamic Impedance | 750 Ω at IZK = 0.25 mA - indicates voltage regulation stiffness under light-load transients |
| Max Reverse Leakage | 0.1 µA at 88 V - ensures minimal standby current in high-impedance bias networks |
| Temp. Coefficient | +0.110 %/°C - quantifies VZ drift over temperature; critical for precision references |
| Operating Temp. | −65 °C to +175 °C - supports deployment in aerospace, downhole, and military environments |
Pinout & Package
DO-35 (DO-204AH) hermetically sealed glass axial-leaded package with cathode indicated by colored band; leads are tin-lead or RoHS-compliant matte-tin plated, solderable per MIL-STD-750 Method 2026.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Non-banded end | Connected to circuit ground or lower-potential node during Zener operation |
| Cathode | Banded end | Connected to regulated voltage node; must be held positive relative to anode for breakdown conduction |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC-registered 1N52xxB series | Guarantees full six-parameter electrical limits (VZ, IR, ZZT, ZZK, αVZ, VF) per JEDEC spec |
| RoHS-compliant "e3" suffix | Meets EU RoHS Directive 2011/65/EU with annealed matte-tin plating and no lead exemptions |
| Tape-and-reel "TR" option | Enables automated pick-and-place assembly per EIA-296 standard; reduces manual handling |
| Radiation-hardened design | Inherently radiation tolerant per MicroNote 050 - suitable for space-grade and nuclear applications |
| ESD-insensitive construction | Withstands >4 kV HBM without parameter shift per MIL-STD-750 Method 1020 |
Applications
| Voltage Reference for Analog Sensors | Overvoltage Clamp in Telecom Line Cards |
|---|---|
Use Scenario: Provides stable excitation voltage for bridge-based pressure sensors in industrial process control systems. IC Role / Device Role / Timing Role: Two-terminal passive voltage reference sourcing <1.1 mA into high-impedance sensor bias network. Use Value: Maintains ±0.110 %/°C drift over −40 °C to +85 °C ambient, enabling <0.25% total system error budget. |
Use Scenario: Protects line interface ICs from lightning-induced surges on POTS telephone lines. IC Role / Device Role / Timing Role: Shunts transient energy above 110 V to ground via controlled avalanche conduction. Use Value: Withstands 0.1 µA leakage at 88 V, minimizing standby power loss while clamping 10/1000 µs transients. |
| High-Temperature Power Supply Feedback | Programmable Threshold Detector in Harsh Environments |
Use Scenario: Sets feedback threshold in isolated DC-DC converters deployed in oil-well downhole tools. IC Role / Device Role / Timing Role: Zener element in optocoupler feedback loop, operating continuously at +150 °C ambient. Use Value: Guaranteed operation to +175 °C with 250 °C/W thermal resistance enables reliable regulation without heatsinking. |
Use Scenario: Defines trip point for comparator-based battery overvoltage detection in military radios. IC Role / Device Role / Timing Role: Precision voltage threshold element connected to comparator inverter input. Use Value: ±5% tolerance and low dynamic impedance ensure repeatable 110 V switching point across temperature and unit-to-unit variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5272B-TP (Micro Commercial) | Same 110 V ±5%, DO-35 package, but rated for 0.5 W at 75 °C ambient (derated vs. Microsemi's 25 °C base) | Limited to commercial-temp applications; not qualified to MIL-PRF-19500 screening levels | Select when cost sensitivity outweighs extended temperature or radiation requirements |
| MMBZ5272B (ON Semiconductor) | SMD MELF DO-213AA package, same 110 V ±5%, but 200 mW power rating and higher ZZK (1000 Ω) | Requires PCB rework for surface-mount assembly; unsuitable for through-hole legacy designs | Select only if board space constraints mandate SMD and 200 mW dissipation suffices |
Compared with 1N5272BE3/TR, the 1N5272B-TP offers identical electrical specs but lacks radiation hardness and extended temperature validation, while the MMBZ5272B trades power capability and through-hole compatibility for miniaturization-neither is pin-compatible nor drop-in.
Availability
1N5272BE3/TR is available at Aetrix Electronics and suitable for industrial power supplies, telecom surge protection, high-temperature instrumentation, and aerospace reference circuits requiring stable component supply with traceable sourcing and long-term lifecycle support.
Supply support for 1N5272BE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N52xxB series was designed specifically for mission-critical voltage reference and protection applications demanding guaranteed parametric limits, wide temperature operation, and inherent radiation tolerance.
FAQ
What is the Zener voltage tolerance for 1N5272BE3/TR?
The 1N5272BE3/TR has a nominal Zener voltage of 110 V with ±5% tolerance, confirmed by the "B" suffix per JEDEC specification. This means the actual measured VZ at 1.1 mA test current falls between 104.5 V and 115.5 V at 25 °C, and is guaranteed across the full operating temperature range.
Does 1N5272BE3/TR require heatsinking in typical applications?
No, the 1N5272BE3/TR does not require external heatsinking in standard applications. Its 500 mW power rating at 25 °C and 250 °C/W junction-to-lead thermal resistance allow safe operation up to 1.1 mA at ambient temperatures below 75 °C without added thermal mass, provided leads are trimmed to ≥10 mm from the glass body.
Is 1N5272BE3/TR suitable for space applications?
Yes, the 1N5272BE3/TR is inherently radiation-hardened per MicroNote 050 and qualifies for use in space applications. While not pre-screened to MIL-PRF-19500 JANS level, its base construction meets TID and SEE requirements typical for LEO missions when used within its rated electrical and thermal limits.
How does the "e3" and "TR" suffix affect 1N5272BE3/TR?
The "e3" suffix denotes RoHS-compliant matte-tin plating per EU Directive 2011/65/EU, replacing traditional tin-lead finish. The "TR" suffix indicates tape-and-reel packaging per EIA-296 standard, enabling automated SMT placement. Both suffixes appear in the full orderable part number 1N5272BE3/TR and are integral to its compliance and manufacturability.
What is the maximum reverse leakage current for 1N5272BE3/TR?
The maximum reverse leakage current for 1N5272BE3/TR is 0.1 µA at 88 V (80% of nominal 110 V), as specified in the Electrical Characteristics table. This low leakage ensures minimal power loss in high-impedance bias networks and stable reference performance in precision analog circuits.
1N5272BE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 110 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 750 Ohms
- Current - Reverse Leakage @ Vr:
- 100 nA @ 84 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
1N5272BE3/TR FAQ
1.How can I place an order for 1N5272BE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5272BE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5272BE3/TR reliable?
The price and inventory of 1N5272BE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5272BE3/TR is usually 5 days.
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Once your 1N5272BE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5272BE3/TR?
For technical support, including 1N5272BE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5272BE3/TR requirements.
6.How does Aetrix verify that 1N5272BE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N5272BE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5272BE3/TR meets industry standards.
7.What is the process for return or replacement of 1N5272BE3/TR?
All 1N5272BE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5272BE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5272BE3/TR part is unused and in its original packaging.
Return procedure for 1N5272BE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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