Microchip Technology 1N5274BE3

Overview

1N5274BE3 from Microsemi is a 500 mW, 130 V nominal Zener diode in DO-35 glass axial-leaded package, rated for ±5% voltage tolerance (B suffix), with 0.95 V maximum forward voltage at 200 mA and 1100 Ω maximum Zener impedance at IZK = 0.25 mA. It operates across –65°C to +175°C and is used for precision voltage reference and overvoltage protection in low-power analog circuits.

For engineers reviewing the 1N5274BE3 datasheet, 1N5274BE3 pinout, 1N5274BE3 application, or 1N5274BE3 equivalent, key selection criteria include its 130 V Zener voltage, tight ±5% tolerance, low 0.1 μA max reverse current at VR = 104 V, temperature coefficient of +0.110 %/°C, and RoHS-compliant matte-tin plating per MIL-STD-750.

Technical Context

This device belongs to the JEDEC-registered 1N5221–1N5281B series of silicon Zener diodes optimized for stable voltage regulation under varying load and temperature conditions. Its breakdown behavior is characterized by a sharp knee, verified via dual-point Zener impedance measurement at IZT and IZK to ensure unit stability.

The 1N5274BE3 uses a hermetically sealed DO-35 (DO-204AH) glass package with axial leads, cathode indicated by band, and is rated for 0.5 W steady-state dissipation at TL < 50°C with 3/8″ lead length. Thermal resistance is 250 °C/W junction-to-lead and 310 °C/W junction-to-ambient on FR4.

Key Specifications

Pinout & Package

Package: DO-35 (DO-204AH), hermetically sealed glass axial-leaded case with cathode band marking. Leads are tin-lead or RoHS-compliant matte-tin plated, solderable per MIL-STD-750 Method 2026.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with 1N5274B and MMBZ5274B, the 1N5274BE3 uniquely combines RoHS compliance, 500 mW power handling, DO-35 hermetic packaging, and inherent radiation hardness-making it the sole option for new high-reliability, through-hole, environmentally compliant Zener reference designs.

Availability

1N5274BE3 is available at Aetrix Electronics and suitable for voltage reference, overvoltage protection, and low-power HV bias applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for 1N5274BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for aerospace, defense, and industrial markets.

The 1N52xxB series was designed specifically for precision voltage regulation in harsh-environment applications where stability, hermetic sealing, and extended temperature operation (–65°C to +175°C) are mandatory.

FAQ

What is the Zener voltage tolerance of the 1N5274BE3?

The 1N5274BE3 has a nominal Zener voltage of 130 V with a guaranteed tolerance of ±5%, denoted by the "B" suffix in its part number. This tolerance is verified per JEDEC standards and applies across the full operating temperature range of –65°C to +175°C, ensuring predictable regulation performance in demanding environments.

Does the 1N5274BE3 require heatsinking in typical applications?

No, the 1N5274BE3 does not require external heatsinking when operated within its 500 mW power limit at ambient or lead temperatures below 50°C. Its thermal resistance is 250 °C/W junction-to-lead at 3/8″ lead length, allowing direct mounting on FR4 PCBs with standard copper pads without additional thermal management.

Is the 1N5274BE3 suitable for use in aerospace-grade designs?

Yes, the 1N5274BE3 is inherently radiation-hardened per MicroNote 050 and supports optional MIL-PRF-19500 screening (e.g., JANTXV) with appropriate prefix additions. Its hermetic DO-35 glass package and ESD insensitivity (MIL-STD-750 Method 1020) make it suitable for flight-critical and satellite subsystem voltage references.

How does the temperature coefficient affect the 1N5274BE3's performance at elevated temperatures?

The 1N5274BE3 has a positive temperature coefficient of +0.110 %/°C, meaning its Zener voltage increases by approximately 143 mV per 10°C rise above 25°C. Designers must account for this drift in precision references-e.g., a 100°C ambient shift yields ~11.3 V increase, requiring compensation or system-level calibration.

Can the 1N5274BE3 be used in forward-bias applications?

Yes, the 1N5274BE3 functions as a standard silicon diode in forward bias, with a maximum forward voltage of 1.5 V at 200 mA. It is commonly used in dual-role circuits-for example, as a forward-biased clamp during power-up sequencing and as a reverse-biased Zener regulator during normal operation.