Microchip Technology 1N5278BUR-1
- Part No.:
- 1N5278BUR-1
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AA
- Datasheet:
-
1N5278BUR-1.pdf
- Description:
- DIODE ZENER 170V 500MW DO213AA
- Quantity:
- Payment:

- Shipping:

Inventory:5,829
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N5278BUR-1 from Microsemi is a hermetically sealed, metallurgically bonded glass MELF Zener diode rated for 500 mW power dissipation, with a nominal Zener voltage of 170 V at 0.74 mA test current, ±5% tolerance, and +0.110 %/°C temperature coefficient. It serves as a precision voltage reference or regulation element in high-voltage bias, feedback, and protection circuits across industrial and aerospace systems.
For engineers reviewing the 1N5278BUR-1 datasheet, 1N5278BUR-1 pinout, 1N5278BUR-1 application, or 1N5278BUR-1 equivalent, key selection considerations include its DO-213AA (SOD80/MLL34) MELF package, low leakage (<0.1 µA at 137 V), high dynamic impedance (1900 Ω at IZT), and MIL-PRF-19500 upscreening capability for ruggedized deployments.
Technical Context
This Zener operates in reverse breakdown mode with a specified Zener voltage of 170 V at IZT = 0.74 mA and exhibits a positive temperature coefficient of +0.110 %/°C - typical for devices above ~100 V. Its metallurgical bond ensures stable junction integrity under thermal cycling and mechanical stress.
The device is characterized at 25 °C with derating applied above 50 °C ambient or 125 °C end-cap temperature, and features minimal capacitance (typical <0.5 pF per Figure 3), making it suitable for high-frequency voltage clamping and stable DC reference applications where parasitic effects must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 170 V at IZT = 0.74 mA - defines precise regulation point for high-voltage feedback networks |
| Power Dissipation (PD) | 0.5 W - limits continuous operating current to ≤2.94 mA at 170 V without heatsinking |
| Zener Impedance (ZZT) | 1900 Ω - indicates moderate AC impedance affecting regulation stability under varying load |
| Reverse Leakage (IR) | <0.1 µA at VR = 137 V - ensures negligible error current in high-impedance reference paths |
| Temp. Coefficient (αVZ) | +0.110 %/°C - quantifies voltage drift of ~187 mV/°C near 170 V, critical for wide-temperature designs |
| Junction Temp. Range | –65 to +175 °C - supports operation in extreme environments including space-grade thermal profiles |
| Package Type | DO-213AA (SOD80/MLL34) MELF - hermetic glass construction enables high reliability and low moisture ingress |
Pinout & Package
DO-213AA (SOD80/MLL34) MELF package: hermetically sealed glass cylindrical body with tin-lead or RoHS-compliant matte-tin plated end caps; cathode identified by single band; polarity requires banded end to be positive during Zener operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unbanded end) | Reference ground node | Connected to system ground or lowest potential point in Zener bias network |
| Cathode (banded end) | Regulated output node | Provides stabilized 170 V relative to anode; must be biased positive w.r.t. anode for breakdown conduction |
Key Features
| Feature | Design Value |
|---|---|
| Metallurgical bond construction | Ensures long-term junction stability under thermal cycling and mechanical shock, critical for aerospace and defense deployments |
| MIL-PRF-19500 upscreening option | Enables qualification to military screening levels (JANTX/JANTXV/JANS) via suffix coding - verified through manufacturer's nomenclature table |
| Low capacitance (<0.5 pF) | Minimizes signal coupling and phase shift in RF-coupled bias networks and high-speed clamp circuits |
| ESD robustness (MIL-STD-750 Method 1020) | Withstands >4 kV HBM without parameter shift - eliminates need for external ESD protection in board-level handling |
| Radiation hardness | Inherently radiation-tolerant per MicroNote 050 - validated for total ionizing dose (TID) resilience in space applications |
Applications
| High-Voltage Power Supply Feedback | Aerospace Sensor Biasing |
|---|---|
Use Scenario: Regulating output of isolated flyback or forward converter with >150 V secondary-side sensing. IC Role / Device Role / Timing Role: Zener reference in optocoupler feedback loop providing stable 170 V threshold for TL431-like control. Use Value: Enables accurate output regulation despite line/load transients, leveraging tight 5% tolerance and low tempco drift. | Use Scenario: Providing stable bias voltage to piezoresistive pressure transducers in satellite payload modules. IC Role / Device Role / Timing Role: High-reliability voltage reference ensuring consistent sensor excitation across –55 to +125 °C operational range. Use Value: Radiation-hardened construction and MIL-qualified variants ensure mission-critical uptime in LEO orbit environments. |
| Laser Diode Current Control | Industrial Overvoltage Protection |
Use Scenario: Setting compliance voltage in constant-current driver for high-power pulsed laser diodes. IC Role / Device Role / Timing Role: Zener clamp limiting gate drive voltage to protect MOSFETs during fast transient events. Use Value: Low leakage (<0.1 µA) prevents unintended current injection into sensitive analog control paths. | Use Scenario: Crowbar circuit trigger in 120–200 V DC distribution systems for factory automation equipment. IC Role / Device Role / Timing Role: Precision overvoltage detection element initiating SCR-based shutdown at exactly 170 V ±8.5 V. Use Value: Tight 5% tolerance and stable tempco enable repeatable trip thresholds without calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5278B | Same electrical specs but in axial DO-35 (DO-204AH) package; no MELF form factor or hermetic seal | Lacks radiation hardness and MIL upscreening path; unsuitable for space or high-reliability surface-mount assemblies | Select when through-hole mounting is required and environmental ruggedness is secondary to cost |
| BZX55-C170 | 170 V, ±5%, 500 mW, but in DO-35 plastic package; higher leakage (≤5 µA @ 136 V); no MIL screening or radiation data | Not qualified for aerospace or extended temperature operation; limited to commercial-grade instrumentation | Choose only for non-critical, cost-sensitive consumer applications where hermeticity and TID resilience are unnecessary |
Compared with 1N5278B and BZX55-C170, the 1N5278BUR-1 uniquely combines MELF packaging, hermetic sealing, MIL-PRF-19500 upscreening eligibility, and documented radiation hardness - making it the sole choice for high-integrity, high-voltage reference needs in harsh environments.
Availability
1N5278BUR-1 is available at Aetrix Electronics and suitable for high-voltage power supply feedback, aerospace sensor biasing, laser diode current control, and industrial overvoltage protection requiring stable component supply across extended temperature and radiation-exposed conditions.
Supply support for 1N5278BUR-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.
The 1N5278BUR-1 belongs to Microsemi's legacy 1N52xxBUR-1 Zener series designed specifically for demanding applications requiring hermetic MELF packaging, MIL-qualified screening, and stable high-voltage regulation from 2.4 V to 200 V.
FAQ
What is the Zener voltage tolerance for 1N5278BUR-1?
The 1N5278BUR-1 has a nominal Zener voltage of 170 V with a tolerance of ±5%, as indicated by the "B" suffix in its part number per Microsemi's nomenclature table. This tolerance applies under standard test conditions at 25 °C with IZT = 0.74 mA, and remains valid across its full operating temperature range when derated per the datasheet curve.
Is 1N5278BUR-1 suitable for surface-mount assembly?
Yes, the 1N5278BUR-1 uses the DO-213AA (SOD80/MLL34) MELF package, which is a standardized surface-mount configuration with solderable tin-lead or RoHS-compliant matte-tin end caps. It is qualified for reflow soldering at 260 °C for 10 seconds and supports automated pick-and-place placement per EIA-481-B tape-and-reel packaging.
Does 1N5278BUR-1 have radiation hardness certification?
Yes, the 1N5278BUR-1 is inherently radiation-hardened per Microsemi MicroNote 050, with documented resilience to total ionizing dose (TID). While not individually certified, its metallurgically bonded glass construction and process heritage provide proven performance in space environments - a key differentiator versus plastic-packaged alternatives like BZX55-C170.
What is the maximum reverse leakage current for 1N5278BUR-1?
The maximum reverse leakage current for 1N5278BUR-1 is 0.1 µA at VR = 137 V, as specified in the Electrical Characteristics table on page 3 of the datasheet. This ultra-low leakage ensures minimal error contribution in high-impedance reference circuits and maintains accuracy in precision biasing applications.
Can 1N5278BUR-1 be used in military-spec designs?
Yes, the 1N5278BUR-1 supports MIL-PRF-19500 upscreening via optional reliability level suffixes (e.g., MQ, MX, MV, MSP), enabling qualification to JAN, JANTX, JANTXV, or JANS levels. The base 1N5278BUR-1 is commercial-grade, but its design and process flow are fully compatible with military screening protocols when ordered with appropriate suffixes.
1N5278BUR-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AA
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 170 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 1900 Ohms
- Current - Reverse Leakage @ Vr:
- 100 nA @ 129 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AA
1N5278BUR-1 FAQ
1.How can I place an order for 1N5278BUR-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5278BUR-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5278BUR-1 reliable?
The price and inventory of 1N5278BUR-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5278BUR-1 is usually 5 days.
3.What payment methods are accepted for 1N5278BUR-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5278BUR-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5278BUR-1?
1N5278BUR-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5278BUR-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5278BUR-1?
For technical support, including 1N5278BUR-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5278BUR-1 requirements.
6.How does Aetrix verify that 1N5278BUR-1 is sourced from the original manufacturer or authorized distributors?
All 1N5278BUR-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5278BUR-1 meets industry standards.
7.What is the process for return or replacement of 1N5278BUR-1?
All 1N5278BUR-1 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5278BUR-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5278BUR-1 part is unused and in its original packaging.
Return procedure for 1N5278BUR-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5278BUR-1 Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

