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Microchip Technology 1N5281BE3

Part No.:
1N5281BE3
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-204AH, DO-35, Axial
Datasheet:
Aetrix1N5281BE3.pdf
Description:
DIODE ZENER 200V 500MW DO204AH
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,092

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Product details

Overview

1N5281BE3 from Microsemi is a 200 V, ±5% tolerance, 500 mW glass axial-lead Zener diode in DO-35 (DO-204AH) package, rated for operation from −65 °C to +175 °C, with 0.1 μA max reverse current at 160 V and 7000 Ω max zener impedance at 0.25 mA, used for precision voltage regulation in power supply reference and overvoltage protection circuits.

For engineers reviewing the 1N5281BE3 datasheet, 1N5281BE3 pinout, 1N5281BE3 application, or 1N5281BE3 equivalent, key selection criteria include its 200 V nominal zener voltage, tight ±5% tolerance (B suffix), RoHS-compliant matte-tin plating (e3 suffix), DO-35 mechanical robustness, and radiation-hardened performance per MicroNote 050.

Technical Context

This device operates as a two-terminal voltage reference diode, conducting in reverse breakdown with sharp knee characteristics verified by dual-point zener impedance testing per MicroNote 202. Its temperature coefficient is +0.110 %/°C, measured at IZT = 0.65 mA from 25 °C to 125 °C per Note 3b.

The 1N5281BE3 exhibits minimal junction capacitance (typ. <2 pF at 0 V, per Figure 2), low ESD sensitivity (MIL-STD-750 Method 1020), and stable regulation across wide current range (IZK = 0.25 mA to IZT = 0.65 mA), making it suitable for high-reliability analog reference and transient suppression where thermal and radiation resilience are critical.

Key Specifications

Parameter Value and Actual Design Meaning
Nominal Zener Voltage 200 V @ IZT = 0.65 mA - defines precise regulation point for high-voltage reference design
Zener Tolerance ±5% (B suffix) - ensures predictable voltage accuracy without post-selection trimming
Power Dissipation 500 mW at 25 °C - supports stable regulation in compact through-hole layouts with 3/8″ lead length
Max Reverse Current 0.1 μA @ VR = 160 V - guarantees low leakage in high-impedance bias networks
Zener Impedance 7000 Ω @ IZK = 0.25 mA - indicates steep breakdown knee for stable regulation under light load
Temp. Coefficient +0.110 %/°C - quantifies voltage drift over −65 °C to +175 °C operating range
Forward Voltage ≤1.5 V @ 200 mA - enables use as clamp or protection diode in forward conduction mode

Pinout & Package

Hermetically sealed DO-35 (DO-204AH) glass axial-leaded package with cathode indicated by color band; leads are tin-lead or RoHS-compliant matte-tin plated per MIL-STD-750 Method 2026; weight: 0.2 g.

Pin/Terminal Circuit Role Design Meaning
Anode Non-banded end Connected to circuit ground or lower potential node during Zener operation
Cathode Banded end Connected to regulated positive rail; polarity must be observed to avoid forward conduction

Key Features

Feature Design Value
JEDEC-registered 1N52xxB series Guarantees full six-parameter specification compliance (VZ, IR, ZZT, ZZK, αVZ, VF) per JEDEC standard
Radiation hardness Inherently radiation-hardened per MicroNote 050 - validated for space and nuclear environments
ESD insensitivity Qualified to MIL-STD-750 Method 1020 - eliminates need for external ESD protection in handling
Thermal stability −65 °C to +175 °C operating range with defined derating - supports engine bay, downhole, and avionics use
RoHS compliance e3 suffix denotes annealed matte-tin plating - meets EU RoHS Directive 2011/65/EU without lead exemption

Applications

High-Voltage Power Supply Reference Overvoltage Protection Clamp

Use Scenario: Stable 200 V reference in isolated DC-DC converter feedback loop for telecom base station power modules.

IC Role / Device Role / Timing Role: Two-terminal passive voltage reference providing error signal to optocoupler-driven PWM controller.

Use Value: ±5% tolerance and +0.110 %/°C TC ensure output regulation stays within ±3% over full temperature range without calibration.

Use Scenario: Transient voltage clamp on 170 V DC bus in industrial motor drive front-end.

IC Role / Device Role / Timing Role: Passive crowbar element that conducts above 200 V to divert surge energy to ground.

Use Value: 0.1 μA leakage at 160 V prevents false triggering; 500 mW rating absorbs repetitive 100 ms surges without degradation.

Avionics Voltage Monitor Radiation-Hardened Sensor Bias

Use Scenario: Undervoltage/overvoltage detection threshold in flight control system power monitor ASIC.

IC Role / Device Role / Timing Role: Precision Zener element setting trip points for comparator input in redundant monitoring chain.

Use Value: Radiation hardness per MicroNote 050 ensures no parametric shift after 100 krad(Si) total ionizing dose exposure.

Use Scenario: Stable bias voltage source for piezoresistive pressure transducer in nuclear reactor instrumentation.

IC Role / Device Role / Timing Role: Low-drift, low-noise reference supplying excitation current to Wheatstone bridge.

Use Value: Minimal capacitance (<2 pF) avoids signal coupling; −65 °C to +175 °C rating matches sensor operating envelope.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N5281BTR Same electrical specs, but supplied in EIA-296 tape-and-reel (TR suffix); identical DO-35 package and RoHS status Optimized for automated SMT placement with carrier tape; requires reel-handling infrastructure Select 1N5281BTR for high-volume production lines using pick-and-place machines; otherwise 1N5281BE3 is preferred for manual assembly or prototyping
MMBZ5281B-TP Surface-mount MELF (DO-213AA) package; same 200 V/±5%/500 mW rating but 0.4 g weight and different thermal resistance (310 °C/W vs. 250 °C/W) Enables PCB area reduction and reflow compatibility; less suited for high-vibration mechanical mounting Choose MMBZ5281B-TP when board space is constrained and reflow soldering is mandatory; retain 1N5281BE3 for axial-lead reliability in shock-prone environments

Compared with 1N5281BTR and MMBZ5281B-TP, the 1N5281BE3 offers superior mechanical ruggedness via axial leads and optimal thermal path to chassis in through-hole designs, while maintaining identical voltage regulation performance and radiation tolerance - making it the default choice for aerospace, defense, and industrial control applications requiring long-term field reliability.

Availability

1N5281BE3 is available at Aetrix Electronics and suitable for high-reliability power supply reference, overvoltage protection, avionics monitoring, and radiation-hardened sensor bias applications requiring stable component supply across extended temperature and lifetime requirements.

Supply support for 1N5281BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and high-voltage analog components for aerospace, defense, and industrial markets.

The 1N52xxB series was designed specifically for precision voltage regulation in mission-critical systems where parametric stability, extreme temperature operation, and radiation immunity are non-negotiable design requirements.

FAQ

What is the nominal zener voltage and tolerance of the 1N5281BE3?

The 1N5281BE3 has a nominal zener voltage of 200 V at test current IZT = 0.65 mA, with a guaranteed tolerance of ±5% (denoted by the "B" suffix). This tolerance applies across the full operating temperature range and is verified per JEDEC standards for all six electrical parameters, not just VZ.

Does the 1N5281BE3 meet RoHS requirements?

Yes, the 1N5281BE3 complies with the EU RoHS Directive 2011/65/EU. The "e3" suffix explicitly indicates RoHS-compliant annealed matte-tin plating, replacing traditional tin-lead finishes while maintaining solderability per MIL-STD-750 Method 2026.

What is the maximum reverse leakage current for the 1N5281BE3?

The 1N5281BE3 specifies a maximum reverse current (IR) of 0.1 μA at VR = 160 V, measured after 20 seconds of thermal stabilization per Note 1. This ultra-low leakage supports high-impedance reference networks and minimizes standby power loss.

Can the 1N5281BE3 be used in high-temperature environments?

Yes, the 1N5281BE3 is rated for continuous operation from −65 °C to +175 °C. Its thermal resistance is 250 °C/W junction-to-lead (at 3/8″ lead length), and derating curves in Figure 1 confirm usable power dissipation up to 175 °C ambient when properly mounted.

Is the 1N5281BE3 radiation hardened?

Yes, the 1N5281BE3 is inherently radiation-hardened per MicroNote 050, with documented performance stability after total ionizing dose exposure. This characteristic is process-inherent and does not require special screening - it applies to all 1N52xxB devices including the 1N5281BE3.

1N5281BE3 Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-204AH, DO-35, Axial
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
200 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
2500 Ohms
Current - Reverse Leakage @ Vr:
100 nA @ 152 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-204AH (DO-35)

1N5281BE3 FAQ

1.How can I place an order for 1N5281BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5281BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5281BE3 reliable?

The price and inventory of 1N5281BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5281BE3 is usually 5 days.

3.What payment methods are accepted for 1N5281BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5281BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5281BE3?

1N5281BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5281BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5281BE3?

For technical support, including 1N5281BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5281BE3 requirements.

6.How does Aetrix verify that 1N5281BE3 is sourced from the original manufacturer or authorized distributors?

All 1N5281BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5281BE3 meets industry standards.

7.What is the process for return or replacement of 1N5281BE3?

All 1N5281BE3 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5281BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5281BE3 part is unused and in its original packaging.

Return procedure for 1N5281BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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