Microchip Technology 1N5367E3/TR8

Overview

1N5367E3/TR8 from Microsemi is a 5 W axial-leaded silicon Zener diode with nominal regulation voltage of 43 V, ±5% tolerance (B-suffix equivalent), 30 mA test current, 20 Ω dynamic impedance at IZT, and maximum reverse current of 0.5 μA at 32.7 V. It regulates voltage in power supply reference and overvoltage protection circuits across industrial temperature range.

For engineers reviewing the 1N5367E3/TR8 datasheet, 1N5367E3/TR8 pinout, 1N5367E3/TR8 application, or 1N5367E3/TR8 equivalent, key selection criteria include Zener voltage accuracy, thermal resistance (25 °C/W junction-to-lead), surge current rating (190 A), voltage regulation (ΔVZ = 2.8 V), and RoHS-compliant matte-tin plating.

Technical Context

This device operates as a two-terminal voltage reference with cathode-banded polarity, requiring reverse-bias connection where the banded end is positive relative to the anode. Its regulation performance is specified at 25 °C lead temperature with 30 mA test current and validated under non-recurrent 8.3 ms half-sine surge conditions.

Thermal design relies on 3/8-inch (10 mm) lead length from body for 25 °C/W junction-to-lead resistance; when mounted on FR4 with 4 mm² copper pads, thermal resistance rises to 85 °C/W junction-to-ambient, limiting steady-state power to 1.47 W unless actively heat-sunk.

Key Specifications

Pinout & Package

Package: Axial-leaded T-18 plastic case per JEDEC DO-204AL standard; void-free UL94V-0 epoxy body; cathode indicated by band; RoHS-compliant matte-tin plated leads solderable per MIL-STD-750 Method 2026.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with 1N5367E3/TR8, 1N5367B offers identical regulation performance but lacks RoHS compliance, while SMBJ5367B provides surface-mount compatibility at reduced thermal derating-making the original axial part optimal for high-power, through-hole industrial designs requiring full 5 W capability.

Availability

1N5367E3/TR8 is available at Aetrix Electronics and suitable for industrial power supplies, overvoltage protection circuits, automotive battery monitoring systems, and programmable threshold detectors requiring stable component supply with traceable sourcing and long-term lifecycle support.

Supply support for 1N5367E3/TR8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The 1N53xxB series was designed for robust, high-power voltage regulation in harsh environments-emphasizing surge resilience, wide temperature operation, and JEDEC-standardized mechanical reliability.

FAQ

What is the Zener voltage tolerance of the 1N5367E3/TR8?

The 1N5367E3/TR8 has a Zener voltage tolerance of ±5%, consistent with the "B" suffix in its family designation. This means its actual regulation voltage falls within 40.85 V to 45.15 V at 30 mA test current and 25 °C lead temperature. The e3 suffix indicates RoHS compliance but does not alter voltage tolerance. This tolerance is verified per JEDEC test methods and applies across the full operating temperature range of -65 °C to +150 °C.

How is thermal management handled for the 1N5367E3/TR8 in high-power operation?

The 1N5367E3/TR8 achieves 5.0 W power dissipation only when lead temperature (T_L) is maintained at 25 °C, requiring 3/8-inch (10 mm) lead length from body for 25 °C/W junction-to-lead thermal resistance. On FR4 PCBs with standard copper pads, thermal resistance increases to 85 °C/W, reducing usable power to 1.47 W. Engineers must use heatsinking clips, chassis mounting, or forced air cooling to sustain full-rated operation. Derating curves in the official Microsemi datasheet define safe operating limits above 25 °C.

Does the 1N5367E3/TR8 support tape-and-reel packaging?

Yes, the "TR8" suffix in 1N5367E3/TR8 explicitly denotes tape-and-reel packaging per EIA-296 standard, with 800 units per reel. This format supports automated pick-and-place assembly and is compatible with standard SMT feeders. The e3 prefix confirms RoHS-compliant matte-tin plating, and the part retains all electrical specifications-including 43 V ±5% Zener voltage, 20 Ω dynamic impedance, and 190 A surge rating-in this packaging configuration.

What is the maximum reverse leakage current specification for the 1N5367E3/TR8?

The 1N5367E3/TR8 specifies a maximum reverse current (I_R) of 0.5 μA at a reverse voltage (V_R) of 32.7 V-defined as 75% of the nominal Zener voltage. This low leakage confirms sharp knee behavior and ensures minimal power loss in standby or high-impedance reference circuits. Leakage remains below 1.0 μA up to 35 V, supporting reliable operation in precision analog monitoring applications where quiescent current must be tightly controlled.

Can the 1N5367E3/TR8 be used as a direct replacement for the 1N5367B?

Yes, the 1N5367E3/TR8 is electrically and mechanically identical to the 1N5367B except for plating: both share 43 V ±5% Zener voltage, 30 mA test current, 20 Ω dynamic impedance, and T-18 axial package. The e3 suffix adds RoHS-compliant matte-tin plating versus SnPb on the 1N5367B. No PCB layout changes are needed, but solder profile must match RoHS requirements (peak 260 °C for 10 s). For legacy SnPb processes, 1N5367B remains appropriate.