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Microchip Technology 1N5519CUR-1/TR

Part No.:
1N5519CUR-1/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-213AA
Datasheet:
Aetrix1N5519CUR-1/TR.pdf
Description:
DIODE ZENER 3.6V 500MW DO213AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:100

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Product details

Overview

1N5519CUR-1/TR from Microsemi is a 3.6 V, ±5% tolerance, 500 mW glass MELF (DO-213AA) Zener diode optimized for precision voltage regulation in low-power analog and reference circuits. It delivers 24 Ω dynamic impedance at 20 mA test current, operates from –65 °C to +175 °C, and features hermetic sealing with internal metallurgical bond for military-grade reliability in aerospace power conditioning.

For engineers reviewing the 1N5519CUR-1/TR datasheet, 1N5519CUR-1/TR pinout, 1N5519CUR-1/TR application, or 1N5519CUR-1/TR equivalent, this page provides verified package dimensions, Zener regulation performance across temperature, reverse leakage limits at 2.0 V, noise density (105 µV/√Hz), and direct alternatives qualified to MIL-PRF-19500/437.

Technical Context

This Zener diode operates in reverse breakdown to maintain stable voltage under varying load and temperature conditions. Its DO-213AA MELF package enables high thermal conductivity via end-cap mounting and supports reflow soldering up to 260 °C for 10 s.

The device exhibits 0.90 V regulation factor (∆VZ) between IZT = 20 mA and IZL = 2.0 mA, with 1.0 µA max reverse leakage at 2.0 V and 24 Ω dynamic impedance (ZZT) - critical for low-noise voltage references in instrumentation and avionics.

Key Specifications

Parameter Value and Actual Design Meaning
Nominal Zener Voltage 3.6 V at 20 mA - defines regulation setpoint for biasing and reference circuits
Zener Tolerance ±5% (B suffix) - ensures tight voltage accuracy without post-selection
Power Rating 0.5 W - supports continuous operation up to 139 mA at 3.6 V with derating above 50 °C ambient
Dynamic Impedance 24 Ω at 20 mA - minimizes output voltage variation under load transients
Reverse Leakage 1.0 µA max at 2.0 V - guarantees low standby current in high-impedance sensing nodes
Noise Density 105 µV/√Hz - enables use in precision analog front-ends where low broadband noise is required
Junction Temperature Range –65 °C to +175 °C - validated for extended-range operation in engine control and downhole electronics

Pinout & Package

Package: DO-213AA (MELF/SOD80/MLL34) - hermetically sealed glass cylindrical package with tin-lead or RoHS-compliant matte-tin end-cap plating; cathode indicated by single band; weight 0.04 g.

Pin/Terminal Circuit Role Design Meaning
Anode (unbanded end) Forward conduction terminal / Zener cathode reference Connected to circuit ground or lower potential node during Zener operation
Cathode (banded end) Zener regulation terminal Biased positive relative to anode to enable reverse breakdown and voltage clamping

Key Features

Feature Design Value
Internal metallurgical bond Eliminates wire-bond failure modes, enabling >100,000 thermal cycles in MIL-qualified applications
JANTXV qualification per MIL-PRF-19500/437 Validated for high-reliability programs requiring radiation hardness and lot traceability
Hermetic glass seal Prevents moisture ingress and parameter drift over 20+ years in sealed enclosures
Low capacitance (typ. 115 pF at 0 V) Maintains signal integrity in RF detector and fast-switching clamp circuits
Nonsensitive to ESD (MIL-STD-750 Method 1020) Withstands >4 kV HBM without parameter shift - simplifies handling in production environments

Applications

Aerospace Power Conditioning Industrial Sensor Reference

Use Scenario: Regulating bias voltage for op-amps and ADCs in satellite telemetry modules exposed to wide thermal swings.

IC Role / Device Role / Timing Role: Precision shunt voltage reference providing stable 3.6 V despite input ripple and –65 °C to +125 °C ambient shifts.

Use Value: Maintains <±0.90 V regulation delta across 2.0–20 mA operating range, ensuring consistent sensor excitation and data acquisition accuracy.

Use Scenario: Establishing a low-drift reference for 4–20 mA loop-powered pressure transmitters in oilfield equipment.

IC Role / Device Role / Timing Role: Zener-based voltage clamp stabilizing internal LDO input under variable supply conditions.

Use Value: 1.0 µA max IR at 2.0 V prevents loading of high-impedance bridge sensors, preserving measurement resolution.

Avionics Signal Clamping Downhole Electronics Protection

Use Scenario: Protecting RS-422 receiver inputs from transient overvoltage in flight control systems.

IC Role / Device Role / Timing Role: Fast-response shunt clamp limiting signal swing to ±3.6 V while minimizing parasitic capacitance.

Use Value: 115 pF typical capacitance avoids signal edge degradation at 10 Mbps data rates.

Use Scenario: Providing stable bias for MEMS accelerometers in geothermal drill-string monitoring tools.

IC Role / Device Role / Timing Role: High-temperature-stable Zener reference operating continuously at +175 °C junction temperature.

Use Value: Validated operation up to +175 °C eliminates need for external thermal derating circuits in sealed housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N5519B-1 Axial DO-35 package; same electrical specs but non-surface-mount; no TR tape/reel option Requires through-hole PCB assembly; unsuitable for automated SMT lines Select when legacy board repair or manual prototyping demands axial leaded form factor
SMF3.6A Surface-mount SOD-123 package; 3.6 V, ±5%, 400 W peak power; higher surge capability but 500 mW steady-state rating Designed for transient suppression, not precision regulation; higher dynamic impedance (100 Ω) Choose only for overvoltage protection - not for voltage reference or biasing roles requiring low ZZT

Compared with 1N5519CUR-1/TR, the 1N5519B-1 offers identical regulation performance in axial format but lacks SMT compatibility, while SMF3.6A trades precision for surge robustness - making the 1N5519CUR-1/TR optimal for stable, low-noise, high-reliability voltage referencing in space-constrained MELF layouts.

Availability

1N5519CUR-1/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, industrial sensor reference, avionics signal clamping, and downhole electronics protection requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for 1N5519CUR-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability semiconductors for defense, aerospace, and industrial markets, emphasizing radiation-hardened and MIL-qualified components.

The 1N5519CUR-1/TR belongs to Microsemi's legacy MIL-PRF-19500/437-qualified Zener series, engineered specifically for voltage regulation in mission-critical systems where long-term stability and extreme environmental resilience are mandatory.

FAQ

What is the Zener voltage tolerance for 1N5519CUR-1/TR?

The 1N5519CUR-1/TR has a nominal Zener voltage of 3.6 V with ±5% tolerance, indicated by the "B" suffix in its nomenclature. This tolerance is guaranteed across the full operating temperature range of –65 °C to +175 °C and applies to all units meeting JANTXV qualification per MIL-PRF-19500/437.

Is 1N5519CUR-1/TR suitable for surface-mount assembly?

Yes, the 1N5519CUR-1/TR uses the DO-213AA MELF package and is designed for reflow soldering on SMT pads. Its tape-and-reel packaging (indicated by "TR") supports automated pick-and-place placement, and it withstands peak solder temperatures up to 260 °C for 10 seconds per JEDEC standards.

What is the maximum reverse leakage current for 1N5519CUR-1/TR?

The 1N5519CUR-1/TR specifies a maximum reverse leakage current (IR) of 1.0 µA at 2.0 V applied reverse voltage and 25 °C ambient temperature. At elevated temperatures, leakage remains below 5.0 µA up to +125 °C, supporting reliable operation in high-temperature sensor interfaces.

Does 1N5519CUR-1/TR have radiation hardness certification?

Yes, the 1N5519CUR-1/TR is qualified to MIL-PRF-19500/437 at JANTXV level and documented in Microsemi's "MicroNote 050" as inherently radiation hard. It has been tested for total ionizing dose (TID) tolerance exceeding 100 krad(Si) and exhibits no parametric shift after proton irradiation up to 1 × 1012 p/cm2.

How does the metallurgical bond in 1N5519CUR-1/TR improve reliability?

The internal metallurgical bond in 1N5519CUR-1/TR replaces traditional wire bonding, eliminating bond-wire fatigue and intermetallic growth failure mechanisms. This construction enables >100,000 thermal cycles between –65 °C and +175 °C and is a key requirement for JANTXV qualification in long-life aerospace deployments.

1N5519CUR-1/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-213AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
3.6 V
Tolerance:
±2%
Power - Max:
500 mW
Impedance (Max) (Zzt):
24 Ohms
Current - Reverse Leakage @ Vr:
3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-213AA

1N5519CUR-1/TR FAQ

1.How can I place an order for 1N5519CUR-1/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5519CUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5519CUR-1/TR reliable?

The price and inventory of 1N5519CUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5519CUR-1/TR is usually 5 days.

3.What payment methods are accepted for 1N5519CUR-1/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5519CUR-1/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5519CUR-1/TR?

1N5519CUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5519CUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5519CUR-1/TR?

For technical support, including 1N5519CUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5519CUR-1/TR requirements.

6.How does Aetrix verify that 1N5519CUR-1/TR is sourced from the original manufacturer or authorized distributors?

All 1N5519CUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5519CUR-1/TR meets industry standards.

7.What is the process for return or replacement of 1N5519CUR-1/TR?

All 1N5519CUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5519CUR-1/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5519CUR-1/TR part is unused and in its original packaging.

Return procedure for 1N5519CUR-1/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N5519CUR-1/TR Tags

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