Microchip Technology 1N5545BUR-1/TR
- Part No.:
- 1N5545BUR-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AA
- Datasheet:
-
1N5545BUR-1/TR.pdf
- Description:
- DIODE ZENER 30V 500MW DO213AA
- Quantity:
- Payment:

- Shipping:

Inventory:79
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N5545BUR-1/TR from Microsemi is a 30 V, ±5% tolerance, 500 mW glass MELF (DO-213AA) Zener diode with metallurgical bond construction, rated for -65°C to +175°C operation and qualified to MIL-PRF-19500/437 JANTXV level. It delivers stable voltage regulation in precision reference and overvoltage protection circuits across wide temperature and current ranges.
For engineers reviewing the 1N5545BUR-1/TR datasheet, 1N5545BUR-1/TR pinout, 1N5545BUR-1/TR application, or 1N5545BUR-1/TR equivalent, key selection factors include its 30 V nominal Zener voltage at 1 mA test current, 100 Ω dynamic impedance, 0.01 µA reverse leakage at 24 V, radiation-hardened hermetic glass package, and RoHS-compliant commercial variants.
Technical Context
This device operates as a low-voltage avalanche Zener regulator with a nominal breakdown voltage of 30 V at IZT = 1 mA and exhibits 13 Ω regulation factor (∆VZ) between IZT and IZL. Its DO-213AA MELF package enables high thermal stability and minimal capacitance (typ. <1.5 pF at 0 V), critical for noise-sensitive analog references.
The metallurgically bonded junction ensures mechanical robustness and long-term stability under thermal cycling, while the cathode band marking and end-cap polarity define unambiguous mounting orientation. Nonsensitivity to ESD per MIL-STD-750 Method 1020 supports handling in standard assembly environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 30.0 V at IZT = 1 mA - precise regulation point for mid-range voltage references. |
| Zener Impedance (ZZT) | 100 Ω at IZT = 1 mA - low dynamic resistance ensures stable output under varying load currents. |
| Reverse Leakage (IR) | 0.01 µA at VR = 24 V - ultra-low leakage preserves accuracy in high-impedance bias networks. |
| Power Dissipation (PD) | 0.5 W - supports continuous regulation in compact surface-mount layouts without forced cooling. |
| Junction Temp Range | -65°C to +175°C - enables deployment in aerospace, downhole, and military systems with extreme thermal profiles. |
| Package Type | DO-213AA (MELF/SOD80) - hermetically sealed glass body provides moisture immunity and radiation hardness. |
| Tolerance | ±5% (B suffix) - tight initial calibration reduces need for post-installation trimming in production. |
Pinout & Package
DO-213AA (MELF) glass surface-mount package with two end-cap terminals; cathode identified by black band. No discrete pins-device functions as a two-terminal bilateral component with polarity-dependent Zener operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Zener anode connection during forward bias; regulated voltage reference node during reverse breakdown | Must be held positive relative to anode to achieve 30 V regulation; defines PCB orientation for automated placement. |
| Anode (unbanded end) | Reference ground or return path during Zener operation | Serves as circuit common for biasing; requires low-impedance connection to minimize regulation error from series resistance. |
Key Features
| Feature | Design Value |
|---|---|
| Metallurgical bond construction | Eliminates die attach voids and interfacial delamination, ensuring long-term parameter stability under thermal shock. |
| JANTXV qualification per MIL-PRF-19500/437 | Validated reliability for mission-critical applications including avionics and space electronics. |
| Hermetic glass MELF package | Prevents moisture ingress and ion contamination, enabling >20-year shelf life and field reliability in harsh environments. |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Allows direct handling and placement without special grounding protocols, reducing manufacturing overhead. |
| Low noise density (ND) | 0.45 µV/√Hz at IZ = 250 µA - suitable for precision analog references where spectral purity affects ADC performance. |
Applications
| High-Voltage Reference Source | Aerospace Power Monitoring |
|---|---|
Use Scenario: Provides stable 30 V reference for 16-bit SAR ADC biasing in satellite telemetry subsystems. IC Role / Device Role / Timing Role: Zener voltage reference establishing absolute scale for analog-to-digital conversion. Use Value: ±5% tolerance and 13 Ω ∆VZ ensure <0.02% full-scale error drift over -55°C to +125°C operating range. |
Use Scenario: Monitors 28 V bus voltage in launch vehicle power distribution units using comparator threshold detection. IC Role / Device Role / Timing Role: Precision overvoltage clamp protecting downstream FET drivers from transient surges. Use Value: 0.01 µA IR at 24 V prevents false triggering during nominal operation while clamping >30 V faults within 100 ns. |
| Radiation-Hardened Sensor Interface | Military Radio Bias Network |
Use Scenario: Supplies regulated bias to radiation-tolerant op-amps in nuclear reactor neutron flux sensors. IC Role / Device Role / Timing Role: Low-noise, radiation-immune voltage source maintaining signal integrity in high-dose environments. Use Value: Inherent radiation hardness (per MicroNote 050) and <1.5 pF capacitance preserve bandwidth and SNR above 1 Mrad(Si). |
Use Scenario: Sets gate threshold for RF power amplifier MOSFETs in manpack tactical radios operating across desert and arctic climates. IC Role / Device Role / Timing Role: Temperature-stable Zener shunt regulating local VDD for RF front-end ICs. Use Value: -65°C to +175°C junction rating and 100 °C/W RθJEC enable reliable operation without derating in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5545US-1 | Same 30 V/±5%/0.5 W spec but in DO-35 axial package; no MIL-PRF-19500 qualification; higher RθJA (300 °C/W vs. 100 °C/W). | Preferred for through-hole prototyping or legacy board rework where surface-mount footprint is unavailable. | Select when manual assembly or socket-based testing is required; avoid in high-reliability SMT production. |
| SMF30A | 30 V TVS diode (not Zener); 600 W peak power; ±5% VBR tolerance; 100 ns response; no DC regulation capability. | Used only for transient suppression-not for steady-state voltage reference or biasing. | Choose only for surge protection; never as functional replacement for 1N5545BUR-1/TR's precision regulation role. |
Compared with 1N5545US-1 and SMF30A, the 1N5545BUR-1/TR uniquely combines MIL-qualified reliability, MELF thermal performance, and true Zener regulation-making it irreplaceable in applications demanding simultaneous precision, stability, and ruggedness.
Availability
1N5545BUR-1/TR is available at Aetrix Electronics and suitable for aerospace power monitoring, radiation-hardened sensor interfaces, military radio bias networks, and high-voltage reference source designs requiring stable component supply across extended temperature and lifecycle requirements.
Supply support for 1N5545BUR-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and mixed-signal components.
The 1N55xxBUR-1 series was developed to meet stringent MIL-PRF-19500/437 requirements for Zener regulation in aerospace, defense, and industrial control systems where long-term parametric stability and environmental resilience are mandatory.
FAQ
What is the Zener voltage tolerance for 1N5545BUR-1/TR?
The 1N5545BUR-1/TR has a ±5% Zener voltage tolerance, indicated by the "B" suffix in its nomenclature. This means its nominal 30 V Zener voltage is guaranteed between 28.5 V and 31.5 V at IZT = 1 mA and TA = 25°C, per MIL-PRF-19500/437 test conditions.
Is 1N5545BUR-1/TR suitable for surface-mount automated assembly?
Yes, the 1N5545BUR-1/TR uses a DO-213AA (MELF) glass package compatible with standard SMT pick-and-place equipment. Its 12 mm tape-and-reel packaging (indicated by "TR") and tin-lead or matte-tin end-cap plating meet MIL-STD-750 solderability requirements for reflow up to 260°C for 10 seconds.
Does 1N5545BUR-1/TR have radiation hardness certification?
Yes, the 1N5545BUR-1/TR is inherently radiation-hardened as documented in Microsemi's MicroNote 050. Its hermetic glass MELF construction and metallurgical bond provide proven resilience to total ionizing dose (TID) exceeding 100 krad(Si), making it suitable for space and nuclear applications.
What is the maximum reverse leakage current for 1N5545BUR-1/TR?
The maximum reverse leakage current (IR) for 1N5545BUR-1/TR is 0.01 µA at VR = 24 V and TA = 25°C. This ultra-low leakage supports high-impedance reference networks and minimizes error in precision analog circuits where bias current must remain below 100 pA.
Can 1N5545BUR-1/TR replace 1N5545B-1 in existing designs?
No-1N5545BUR-1/TR is a surface-mount MELF device (DO-213AA), whereas 1N5545B-1 is an axial-leaded DO-35 package. While electrically identical, their footprints, thermal paths, and assembly processes differ. Direct substitution requires PCB layout revision and requalification per MIL-PRF-19500/437.
1N5545BUR-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 30 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 100 Ohms
- Current - Reverse Leakage @ Vr:
- 10 nA @ 27 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AA
1N5545BUR-1/TR FAQ
1.How can I place an order for 1N5545BUR-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5545BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5545BUR-1/TR reliable?
The price and inventory of 1N5545BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5545BUR-1/TR is usually 5 days.
3.What payment methods are accepted for 1N5545BUR-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5545BUR-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5545BUR-1/TR?
1N5545BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5545BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5545BUR-1/TR?
For technical support, including 1N5545BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5545BUR-1/TR requirements.
6.How does Aetrix verify that 1N5545BUR-1/TR is sourced from the original manufacturer or authorized distributors?
All 1N5545BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5545BUR-1/TR meets industry standards.
7.What is the process for return or replacement of 1N5545BUR-1/TR?
All 1N5545BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5545BUR-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5545BUR-1/TR part is unused and in its original packaging.
Return procedure for 1N5545BUR-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5545BUR-1/TR Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

