Semtech Corporation 1N5807

Overview

1N5807 from ON Semiconductor is a 100V, 3A axial-lead Schottky rectifier diode optimized for high-efficiency DC/DC conversion and low-voltage power supplies. It features a typical forward voltage of 0.55V at 3A, reverse leakage current of 0.5mA at 100V, and junction-to-ambient thermal resistance of 40°C/W in free air. It is commonly used in switch-mode power supplies, battery chargers, and OR-ing circuits where low conduction loss and fast recovery are critical.

For engineers reviewing the 1N5807 datasheet, pinout, applications, or equivalent options, key selection considerations include its 100V reverse voltage rating, 3A average forward current capability, 0.55V forward voltage drop at rated current, thermal performance in TO-204AA (DO-41) package, and suitability for high-frequency rectification without minority-carrier recovery delay.

Technical Context

The 1N5807 operates as a unidirectional metal–semiconductor junction rectifier with no minority-carrier storage delay. Its low forward voltage arises from the Schottky barrier structure, enabling reduced conduction losses compared to PN-junction diodes. The device exhibits soft reverse recovery behavior and negligible reverse recovery time (trr), making it suitable for frequencies up to several hundred kHz.

Thermal design relies on its TO-204AA (DO-41) axial-lead package, which provides a defined junction-to-ambient path. At 3A DC, self-heating is dominated by I²R conduction loss; derating is required above 75°C ambient to maintain junction temperature below 125°C. Reverse leakage increases exponentially with temperature but remains within specification up to 125°C.

Key Specifications

Pinout & Package

Package: TO-204AA (DO-41), axial-lead, glass-passivated case with cathode band marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with STPS3L100A and SB3100, the 1N5807 offers superior mechanical reliability in harsh environments due to its axial-leaded DO-41 construction, while maintaining identical voltage/current ratings and near-equivalent forward loss-making it preferred for industrial controls, legacy designs, and field-serviceable equipment.

Availability

1N5807 is available at Aetrix Electronics and suitable for switch-mode power supplies, battery chargers, and solar charge controllers requiring stable component supply and long-term industrial availability.

Supply support for 1N5807 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 1N5807 belongs to ON Semiconductor's general-purpose Schottky rectifier product line, designed for cost-sensitive, high-reliability DC/DC conversion where low VF, fast switching, and proven DO-41 ruggedness are essential.

FAQ

What is the maximum junction temperature rating for the 1N5807?

The 1N5807 has a maximum junction temperature (TJ) of +125°C. This rating is validated across its full operating range and defines the upper thermal limit for reliable long-term operation. Exceeding this temperature accelerates parametric drift and reduces lifetime. Derating curves in the official ON Semiconductor datasheet specify allowable average forward current versus ambient temperature, with full 3A rating limited to ≤75°C ambient in free air.

Is the 1N5807 suitable for high-frequency switching applications like 500 kHz DC/DC converters?

Yes, the 1N5807 is well-suited for high-frequency switching applications up to 500 kHz due to its Schottky architecture, which eliminates minority-carrier storage delay and reverse recovery time (trr ≈ 0). Unlike PN-junction rectifiers, it introduces no recovery-related switching loss or EMI. However, its 0.55V forward voltage and thermal resistance require careful attention to layout and heatsinking at full 3A load in such topologies.

Does the 1N5807 have a specified reverse recovery time (trr)?

No-the 1N5807 does not specify reverse recovery time (trr) because it is a Schottky diode with a metal–semiconductor junction. It lacks minority carriers and therefore exhibits no stored charge or measurable trr. Datasheets list "soft recovery" and "negligible reverse recovery charge (Qrr)" instead. This absence of trr makes the 1N5807 inherently compatible with high-speed synchronous rectification and zero-voltage-switching topologies.

Can the 1N5807 be used as a freewheeling diode in an inductive load circuit with 24V supply and 2A peak current?

Yes, the 1N5807 is appropriate for freewheeling in 24V/2A inductive circuits. Its 100V VRRM comfortably exceeds the 24V supply plus expected inductive kick (typically <50V), and its 3A IF(AV) rating covers 2A peak with margin. The low VF minimizes power dissipation during flyback conduction, and its soft recovery prevents voltage spikes that could damage driving transistors. Ensure adequate PCB copper area for thermal management during repetitive duty cycles.

How does the 1N5807 compare to the 1N5817 in terms of voltage rating and application scope?

The 1N5807 is rated for 100V repetitive reverse voltage (VRRM), whereas the 1N5817 is rated for only 20V. This makes the 1N5807 suitable for higher-voltage applications such as 48V telecom systems, 36V battery packs, or industrial 24V+ supplies with surge margins, while the 1N5817 is restricted to low-voltage logic supplies (3.3V–12V). Both share the same DO-41 package and 3A current rating, but their voltage classes are not interchangeable without risk of breakdown.