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Semtech Corporation 1N5811US
- Part No.:
- 1N5811US
- Manufacturer:
- Semtech Corporation
- Category:
- Single Diodes
- Package:
- SQ-MELF
- Datasheet:
-
1N5811US.pdf
- Description:
- DIODE GEN PURP 150V 6A
- Quantity:
- Payment:
- Shipping:
Inventory:4,096
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Product details
Overview
1N5811US from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection on single 22V I/O or power lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), 27.5–28V clamping voltage at 40A, and DFN 1.6×1.6×0.55mm 6-lead package. It protects USB Type-C power delivery buses and industrial load switch inputs.
For engineers reviewing the 1N5811US datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, functional pin mapping, real-world use cases in USB PD and load switch protection, and validated alternative parts with documented technical differences.
Technical Context
The 1N5811US uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that turns on the shunt path when transient voltage exceeds breakdown. Unlike conventional TVS diodes, its clamping voltage remains nearly constant across 24–40A (8/20μs) due to decreasing RDS(on), not fixed dynamic resistance.
It operates from −40°C to +125°C with 22V reverse stand-off voltage, 25–27.9V breakdown, and 20mΩ dynamic resistance. Its 175pF junction capacitance at 22V/1MHz and <600nA leakage at VRWM make it suitable for medium-speed bus protection where low capacitance is required but not ultra-low (e.g., <0.5pF).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Stand-Off Voltage | 22 V - Maximum continuous operating voltage before triggering; matches USB PD 20V nominal + margin. |
| Clamping Voltage | 27.5–28 V at 40A (8/20μs) - Limits transient overvoltage to safe level for 24V-tolerant controllers. |
| Peak Pulse Current | 40 A (8/20μs) - Withstands industrial surge standards including ±1kV (1.2/50μs + 8/20μs, RS = 42Ω). |
| ESD Withstand | ±30 kV contact & air (IEC 61000-4-2) - Survives direct human-body ESD events without degradation. |
| Junction Capacitance | 175 pF at 22 V, 1 MHz - Compatible with USB 2.0 and lower-speed industrial interfaces; not for USB 3.x SS lanes. |
| Dynamic Resistance | 20 mΩ - Enables flat clamping curve; ensures VC stays within 0.5V across full 1–40A surge range. |
Pinout & Package
1N5811US is housed in a Pb-free, RoHS-compliant DFN 1.6 mm × 1.6 mm × 0.55 mm 6-lead package with exposed thermal pad (no solder mask defined). All six terminals are electrically active: three GND pins (1–3) and three IN pins (4–6), requiring parallel connection for full 40A rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | GND | Common ground return path; all three must be connected to minimize inductance and maximize surge current handling. |
| 4, 5, 6 | IN | Protected line input; tied together to distribute surge current across parallel paths and reduce trace inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Constant-clamp architecture | Clamping voltage varies ≤0.5V from 24A to 40A (8/20μs), eliminating design margin uncertainty vs. TVS diodes. |
| Temperature-stable protection | Clamping remains stable from −40°C to +125°C - no derating needed for hot industrial environments. |
| Low dynamic resistance | 20 mΩ enables efficient energy diversion; reduces localized heating during multi-pulse transients. |
| High-energy EFT immunity | Withstands ±4 kV burst (IEC 61000-4-4, 5/50 ns) - critical for relay-switched industrial control inputs. |
Applications
| USB Type-C Power Delivery Bus Protection | Industrial Load Switch Input Protection |
|---|---|
|
Use Scenario: Protecting VBus lines in USB-C receptacles supporting up to 20V/5A PD, exposed to ESD and lightning-induced surges. IC Role / Device Role / Timing Role: Transient diverting suppressor placed between connector and load switch or PD controller IC. Use Value: Maintains 27.5–28V clamping at 40A and 125°C - prevents damage to 24V-rated PD controllers where standard TVS would exceed 35V. |
Use Scenario: Shielding enable and input rails of industrial-grade load switches (e.g., HS2950P) in remote meters and robotics. IC Role / Device Role / Timing Role: Primary front-end EOS protector on VIN rail, upstream of OVP/UVLO circuitry. Use Value: Keeps clamping below internal FET drain-source breakdown (typically 30–36V), avoiding catastrophic failure during 1kV surge events. |
| IoT Edge Node Power Rail Protection | Notebook/Tablet DC-DC Input Protection |
|
Use Scenario: Securing 12–24V input rails of battery-powered IoT gateways subjected to field ESD and induced surges. IC Role / Device Role / Timing Role: Single-device solution for both ESD and surge, replacing cascaded TVS + MOV. Use Value: 1.6×1.6mm footprint saves >60% board area vs. discrete TVS+series resistor solutions while delivering higher IPP. |
Use Scenario: Protecting buck converter inputs in thin-client notebooks where space and thermal constraints limit protection options. IC Role / Device Role / Timing Role: Low-leakage (≤600nA) shunt device placed directly at DC jack or USB-C port entry point. Use Value: 130–600nA leakage at 22V ensures minimal standby current impact - critical for always-on system wake logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TDS2211P.C | Identical electrical specs and package; same Semtech die, differentiated only by tape-and-reel packaging (3,000 pcs/reel). | No functional difference; used interchangeably in production where reel quantity matches procurement planning. | Select TDS2211P.C for volume manufacturing; 1N5811US may reflect alternate marking or distribution channel variant. |
| SMAJ22A | Standard unidirectional TVS diode; 22V VRWM, 35.5V VC @ 12.3A (8/20μs); higher clamping, lower IPP (12.3A), larger DO-214AC package. | Limited to lower-energy surges; requires larger layout area and exhibits rising VC with temperature and current. | Choose SMAJ22A only if cost sensitivity outweighs clamping performance and board space constraints. |
Compared with SMAJ22A, 1N5811US delivers 3.2× higher peak pulse current in 75% less area while maintaining ≤28V clamping across temperature and current - making it superior for compact, high-reliability USB PD and industrial power rail designs.
Availability
1N5811US is available at Aetrix Electronics and suitable for USB Type-C power delivery systems, industrial load switch inputs, IoT edge node power rails, and notebook DC-DC input protection requiring stable component supply and long-term lifecycle support.
Supply support for 1N5811US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Semtech Corporation is a U.S.-based fabless semiconductor company specializing in high-performance analog and mixed-signal semiconductors for power management, protection, and signal integrity.
The 1N5811US belongs to Semtech's Transient Diverting Suppressor (TDS) product line, engineered to replace conventional TVS diodes in high-energy EOS applications where stable clamping and temperature resilience are critical.
FAQ
What is the maximum operating temperature for the 1N5811US?
The 1N5811US is rated for continuous operation from −40°C to +125°C ambient temperature. Its clamping voltage remains stable across this full range, with no derating required - confirmed by characterization data showing ≤0.3V variation in VC from −40°C to +125°C at 40A (8/20μs). This makes 1N5811US suitable for under-hood automotive modules and industrial motor drives.
Does the 1N5811US require a thermal pad or heatsink?
No, the 1N5811US does not require an external thermal pad or heatsink. Its DFN package dissipates surge energy through low RDS(on) conduction rather than junction heating, and the datasheet explicitly states "no thermal pad is needed" under transient conditions. PCB layout should prioritize low-inductance grounding via multiple vias to pins 1–3, not copper pour area.
Can the 1N5811US protect high-speed data lines like USB 3.2 SuperSpeed?
No, the 1N5811US is not suitable for USB 3.2 SuperSpeed (5–10 Gbps) differential lanes. Its 175pF junction capacitance at 22V introduces excessive signal distortion and insertion loss. It is intended for VBus, CC, SBU, or power-rail protection - not high-speed data. For SuperSpeed lines, Semtech recommends RClamp3371ZC (<0.25pF).
How does the 1N5811US differ from a standard TVS diode like SMAJ22A?
The 1N5811US uses an active FET-based shunt architecture with a precision trigger circuit, resulting in flat clamping (27.5–28V) across 1–40A and temperature. SMAJ22A is a passive pn-junction TVS with linear VC = VBR + IPP × RDYN, causing clamping to rise from ~32V to >38V as current or temperature increases - a key reliability gap addressed by 1N5811US.
Is the 1N5811US pin-compatible with TDS2211P.C?
Yes, 1N5811US and TDS2211P.C share identical pin configuration (GND on pins 1–3, IN on pins 4–6), mechanical dimensions (1.6×1.6×0.55mm DFN), and electrical specifications. They differ only in packaging and marking - TDS2211P.C is the standard tape-and-reel variant with "T22" date-code marking; 1N5811US reflects an alternate distribution channel or marking scheme but is functionally and physically interchangeable.
1N5811US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Series:
- -
- Package/Case:
- SQ-MELF
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io):
- 6A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 150 V
- Capacitance @ Vr, F:
- 60pF @ 5V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
1N5811US FAQ
1.How can I place an order for 1N5811US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5811US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5811US reliable?
The price and inventory of 1N5811US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5811US is usually 5 days.
3.What payment methods are accepted for 1N5811US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5811US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5811US?
1N5811US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5811US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5811US?
For technical support, including 1N5811US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5811US requirements.
6.How does Aetrix verify that 1N5811US is sourced from the original manufacturer or authorized distributors?
All 1N5811US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5811US meets industry standards.
7.What is the process for return or replacement of 1N5811US?
All 1N5811US units undergo pre-shipment inspection (PSI). If there is an issue with 1N5811US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5811US part is unused and in its original packaging.
Return procedure for 1N5811US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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