onsemi 1N5917BRL

Overview

1N5917BRL from onsemi is a 3 W, 4.7 V ±5% Zener diode in DO-41 axial package, designed for precision voltage regulation and overvoltage protection in DC power supplies, reference circuits, and surge-clamping applications. It delivers 319 mA maximum DC zener current, 79.8 Ω zener impedance at 5 mA test current, and supports steady-state dissipation up to 3 W at 75°C lead temperature.

For engineers reviewing the 1N5917BRL datasheet, pinout, applications, or equivalent options, key selection criteria include its tight ±5% tolerance, 98 W surge rating at 1 ms, Class 3 ESD robustness (>16 kV HBM), and compatibility with Pb-free reflow and hand-soldering processes per J-STD-020.

Technical Context

This device uses silicon-oxide passivated junction technology to achieve stable reverse breakdown characteristics and low leakage across −65°C to +200°C operating range. Its thermal design centers on junction-to-lead conduction (primary path via cathode lead), with transient thermal resistance θ_JL dependent on pulse width and duty cycle per Figure 2.

The 1N5917BRL operates under strict test conditions: zener voltage guaranteed at TL = 30°C ±1°C measured 3/8″ from body after 90 s; zener impedance derived from 60 s AC superimposed on DC bias (IZT = 5 mA); and leakage current specified at VR = 1.5 V (IR ≤ 1 μA).

Key Specifications

Pinout & Package

Package: DO-41 (Case 59-10), axial-leaded, transfer-molded thermosetting plastic. Cathode indicated by polarity band. Lead diameter uncontrolled within 0.71–0.86 mm (0.028–0.034″). Mounting position unrestricted.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with 1N5917BRL, the 1N4733A offers superior regulation at higher currents but lacks surge and thermal robustness; the BZX55-C4V7 reduces size and cost but sacrifices reliability in harsh environments and high-energy transients.

Availability

1N5917BRL is available at Aetrix Electronics and suitable for DC power supply regulation, overvoltage clamp circuits, temperature-stable reference generation, and current-limited bias source applications requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for 1N5917BRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, medical, and IoT applications.

The 1N5913B Series belongs to onsemi's legacy Zener regulator portfolio, engineered for high-reliability voltage reference and protection in cost-sensitive, high-volume power systems where robustness and process consistency are critical.

FAQ

What is the zener voltage tolerance of the 1N5917BRL?

The 1N5917BRL has a ±5% zener voltage tolerance, meaning its nominal 4.7 V rating falls between 4.47 V and 4.94 V when measured at I_ZT = 5 mA and lead temperature TL = 30°C ±1°C. This tolerance is guaranteed by onsemi and applies across the full operating temperature range, making the 1N5917BRL suitable for applications requiring predictable regulation without post-production trimming.

Can the 1N5917BRL be used in surface-mount designs?

No - the 1N5917BRL is manufactured exclusively in the axial-leaded DO-41 (Case 59-10) package and is not available in SMD variants. Its mechanical outline requires through-hole mounting with leads extending 25.4 mm (1.0″) minimum. For surface-mount alternatives, engineers should consider the SMAZ4.7 or NZ9F4V7, which offer comparable electrical specs but require layout redesign and thermal validation.

What is the maximum surge power the 1N5917BRL can withstand?

The 1N5917BRL is rated for 98 W nonrepetitive surge power at 1 ms pulse width, as defined in Figure 3 of the onsemi datasheet. This rating assumes TJ = 25°C prior to the pulse and applies only to single, isolated events. Exceeding this limit risks irreversible junction degradation, even if average power remains within 3 W limits. The 1N5917BRL must never be subjected to repetitive surges above 10% of this value without verifying thermal recovery time.

How does the 1N5917BRL perform at elevated temperatures?

The 1N5917BRL maintains full functionality from −65°C to +200°C junction temperature. At 125°C ambient, its power dissipation must be derated to ~1.3 W (per Figure 1), and zener voltage shifts predictably per its temperature coefficient curve (Figure 5). The 1N5917BRL's oxide-passivated junction ensures minimal parameter drift and no parametric failure up to maximum rated temperature, supporting use in under-hood automotive modules.

Is the 1N5917BRL RoHS-compliant and halogen-free?

Yes - the 1N5917BRL carries the "G" suffix indicating Pb-free construction and full compliance with EU RoHS Directive 2011/65/EU. Its transfer-molded plastic package contains no halogenated flame retardants, meeting IPC-4101D/126 requirements. Soldering is qualified per J-STD-020, with peak reflow temperature up to 260°C for 10 seconds at 1/16″ from the case, confirming suitability for modern lead-free manufacturing lines.