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Microchip Technology 1N5923BUR-1/TR
- Part No.:
- 1N5923BUR-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AB, MELF (Glass)
- Datasheet:
-
1N5923BUR-1/TR.pdf
- Description:
- DIODE ZENER 8.2V 1.25W DO213AB
- Quantity:
- Payment:
- Shipping:
Inventory:6,893
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Product details
Overview
1N5923BUR-1/TR from Microsemi is a 1.5 W surface-mount Zener diode in DO-213AB (MELF) glass package, with nominal Zener voltage 8.2 V at 45.7 mA test current, dynamic impedance 3.5 Ω, and maximum Zener current 182 mA. It delivers stable voltage regulation in high-density power supply rails and precision reference circuits across industrial temperature range.
For engineers reviewing the 1N5923BUR-1/TR datasheet, 1N5923BUR-1/TR pinout, 1N5923BUR-1/TR application, or 1N5923BUR-1/TR equivalent, key selection criteria include Zener voltage tolerance (5%), thermal resistance (40 °C/W junction-to-end cap), hermetic glass construction, MIL-PRF-19500 screening availability, and RoHS-compliant plating.
Technical Context
This device operates as a two-terminal voltage regulator in reverse-biased breakdown mode, with specified knee current (IZK = 0.5 mA) and knee impedance (ZZK = 400 Ω) confirming stable conduction onset. Its metallurgically bonded tungsten slug structure ensures low thermal resistance and enhanced reliability under thermal cycling.
The DO-213AB MELF package provides hermetic sealing, ESD immunity per MIL-STD-750 Method 1020, and capacitance of ~15 pF (inferred from Figure 2 at 8.2 V), making it suitable for noise-sensitive analog references and low-parasitic feedback paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 8.2 V at IZT = 45.7 mA - defines nominal regulation point for stable reference generation |
| Power Dissipation | 1.5 W @ TEC ≤ 115 °C - supports continuous operation in thermally constrained SMT layouts |
| Dynamic Impedance (ZZT) | 3.5 Ω - ensures minimal output voltage variation under load current changes |
| Junction Temp Range | –65 to +175 °C - enables deployment in extended-temperature industrial and aerospace environments |
| Thermal Resistance (RθJEC) | 40 °C/W - allows direct thermal path to PCB copper or heatsink via end-cap mounting |
| Reverse Current (IR) | 400 µA @ VR = 5.0 V - confirms low leakage below breakdown threshold for standby efficiency |
| Forward Voltage (VF) | 1.2 V max @ 200 mA - defines forward conduction behavior during transient overvoltage events |
Pinout & Package
DO-213AB (MELF) glass package: hermetically sealed cylindrical body with metallurgically bonded tungsten slugs; cathode indicated by single band; RoHS-compliant matte tin plating over copper; weight ≈ 0.05 g; dimensions BD = 2.39–2.67 mm, BL = 4.80–5.21 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal in forward bias; negative terminal during Zener regulation | Connected to lower-potential node in shunt regulator configuration; must be routed with low-inductance path for stability |
| Cathode | Negative terminal in forward bias; positive terminal during Zener regulation | Banded end; connected to regulated voltage rail; serves as reference node for feedback networks |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass MELF construction | Eliminates moisture ingress and long-term parameter drift; certified for high-reliability applications per MIL-PRF-19500 |
| Metallurgically enhanced internal contacts | Reduces thermal resistance by >30% vs standard glass diodes; improves power handling and thermal cycling endurance |
| Low dynamic impedance (3.5 Ω) | Minimizes output voltage deviation under ±10 mA load transients in precision reference designs |
| ESD immunity (MIL-STD-750 Method 1020) | Withstands >8 kV HBM without parameter shift-critical for automated assembly and field-replaceable modules |
| RoHS-compliant plating | Matte tin termination compatible with lead-free reflow profiles up to 260 °C for 10 s |
Applications
| Industrial Power Supply Reference | Avionics Voltage Clamp |
|---|---|
Use Scenario: Providing stable 8.2 V reference for isolated DC-DC converter feedback loops in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Shunt voltage reference regulating error amplifier input in secondary-side feedback network. Use Value: Low 3.5 Ω dynamic impedance maintains <±0.5% output regulation across 10–100 mA load steps, improving system accuracy. | Use Scenario: Clamping transient overvoltages on 28 V aircraft bus lines during load dump or inductive switching events. IC Role / Device Role / Timing Role: Passive overvoltage protection element absorbing surge energy via controlled Zener conduction. Use Value: Hermetic glass construction withstands 175 °C junction temperature during 500 ms surges, preventing catastrophic failure. |
| Test Equipment Precision Bias | Radiation-Hardened Sensor Interface |
Use Scenario: Generating calibrated bias voltage for op-amp input stages in portable multimeters and calibration standards. IC Role / Device Role / Timing Role: Low-noise, low-drift voltage source referenced to ground in analog front-end circuitry. Use Value: Specified capacitance (~15 pF) and low leakage (<400 µA) minimize phase shift and settling time in high-impedance measurement paths. | Use Scenario: Stabilizing supply rails for radiation-tolerant temperature sensors in satellite payload telemetry systems. IC Role / Device Role / Timing Role: Radiation-hardened voltage reference maintaining regulation integrity after 100 krad(Si) total ionizing dose exposure. Use Value: Inherent radiation hardness per Microsemi MicroNote 050 eliminates need for shielding or derating in LEO missions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5923B-TR | Same Zener voltage (8.2 V), identical DO-213AB package, but non-RoHS tin/lead plating; no "e3" suffix | Approved for legacy military programs requiring Pb-based solder compatibility; not compliant with EU RoHS Directive 2011/65/EU | Select when Pb-containing assembly processes are mandated and environmental compliance is secondary |
| SMBG5923B | Same electrical specs, but SMB (DO-214AA) surface-mount package with tabbed leads; RθJA = 100 °C/W vs 120 °C/W for 1N5923BUR-1/TR | Better suited for high-volume automated placement; less sensitive to board warpage than MELF; higher parasitic inductance limits RF performance | Select when board space permits larger footprint and thermal management prioritizes ease of rework over ultimate power density |
Compared with 1N5923B-TR and SMBG5923B, the 1N5923BUR-1/TR uniquely combines RoHS compliance, hermetic MELF packaging, and lowest thermal resistance to end cap-making it optimal for compact, high-reliability, thermally demanding applications where long-term parameter stability is critical.
Availability
1N5923BUR-1/TR is available at Aetrix Electronics and suitable for industrial power supplies, avionics clamping circuits, precision test equipment biasing, and radiation-hardened sensor interfaces requiring stable component supply across extended product lifecycles.
Supply support for 1N5923BUR-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components with emphasis on analog, mixed-signal, and power management solutions.
The 1N59xxBUR-1 series belongs to Microsemi's high-stability Zener diode product line, engineered specifically for mission-critical voltage regulation in defense, space, and industrial systems where hermeticity, thermal robustness, and MIL-spec screening are mandatory.
FAQ
What is the Zener voltage tolerance for the 1N5923BUR-1/TR?
The 1N5923BUR-1/TR has a Zener voltage tolerance of ±5%, denoted by the "B" in its part number nomenclature. This means its measured VZ falls within 7.79 V to 8.61 V at IZT = 45.7 mA and TEC = 30 °C. The tolerance is guaranteed across the full operating temperature range and remains stable over time due to the hermetic glass package and metallurgical bonding in the 1N5923BUR-1/TR.
Does the 1N5923BUR-1/TR require derating above 25 °C ambient?
Yes-the 1N5923BUR-1/TR must be derated above 25 °C ambient per its power derating curve (Figure 1). At TA = 70 °C on FR4 board, maximum allowable power drops to ~0.9 W. However, when mounted with end-cap thermal path (e.g., to copper pour), derating follows the 40 °C/W RθJEC slope, allowing 1.5 W operation up to TEC = 115 °C. This dual-derating behavior is explicitly defined for the 1N5923BUR-1/TR in the Microsemi datasheet.
Is the 1N5923BUR-1/TR suitable for use in space-grade applications?
Yes-the 1N5923BUR-1/TR is inherently radiation-hardened per Microsemi MicroNote 050 and supports MIL-PRF-19500 screening for high-reliability programs. Its hermetic DO-213AB package, tungsten slug construction, and metallurgically bonded contacts make it qualified for low-Earth orbit (LEO) satellite power conditioning and sensor biasing where total ionizing dose (TID) up to 100 krad(Si) is expected. These attributes are documented for the 1N5923BUR-1/TR family.
What does the "TR" suffix indicate in 1N5923BUR-1/TR?
"TR" denotes tape-and-reel packaging per EIA-481-B standard using 12 mm carrier tape, enabling automated SMT placement. The "UR" portion indicates metallurgically bonded MELF construction, while "-1" specifies commercial reliability level. All variants-including the 1N5923BUR-1/TR-are supplied with cathode band marking and RoHS-compliant matte tin plating, as confirmed in the Microsemi T4-LDS-0300-1 datasheet for the 1N5923BUR-1/TR.
How does the 1N5923BUR-1/TR compare to axial-leaded 1N5923B in terms of layout impact?
The 1N5923BUR-1/TR uses DO-213AB MELF packaging versus DO-41 for the axial 1N5923B, eliminating through-hole drilling and enabling higher board density. Its symmetrical cylindrical form factor requires specific pad layout (A = 7.00 mm, B = 1.8 mm per datasheet), but eliminates orientation concerns and reduces parasitic inductance by ~30% compared to axial leads. This geometry directly impacts high-frequency stability in the 1N5923BUR-1/TR's regulation performance.
1N5923BUR-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AB, MELF (Glass)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 8.2 V
- Tolerance:
- ±5%
- Power - Max:
- 1.25 W
- Impedance (Max) (Zzt):
- 3.5 Ohms
- Current - Reverse Leakage @ Vr:
- 5 µA @ 6.5 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AB (MELF, LL41)
1N5923BUR-1/TR FAQ
1.How can I place an order for 1N5923BUR-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5923BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5923BUR-1/TR reliable?
The price and inventory of 1N5923BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5923BUR-1/TR is usually 5 days.
3.What payment methods are accepted for 1N5923BUR-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5923BUR-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5923BUR-1/TR?
1N5923BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5923BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5923BUR-1/TR?
For technical support, including 1N5923BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5923BUR-1/TR requirements.
6.How does Aetrix verify that 1N5923BUR-1/TR is sourced from the original manufacturer or authorized distributors?
All 1N5923BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5923BUR-1/TR meets industry standards.
7.What is the process for return or replacement of 1N5923BUR-1/TR?
All 1N5923BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5923BUR-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5923BUR-1/TR part is unused and in its original packaging.
Return procedure for 1N5923BUR-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5923BUR-1/TR Tags
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