onsemi 1N6000B_T50A

Overview

1N6000B_T50A from Fairchild Semiconductor is a 9.5 V ±5% Zener diode in DO-35 glass package, rated for 500 mW power dissipation at TL ≤ 75°C, with 15 Ω zener impedance at 5 mA test current and 0.1 mA leakage current at 8 V reverse bias. It provides precision voltage regulation in low-power analog reference and overvoltage protection circuits.

For engineers reviewing the 1N6000B_T50A datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal derating behavior, cathode identification per DO-35 marking convention, and direct alternative options for voltage reference design.

Technical Context

The 1N6000B_T50A operates as a silicon planar Zener diode with sharp reverse breakdown at 9.5 V nominal, specified under thermal equilibrium at lead temperature of 30°C ±1°C with 3/8″ lead length. Its 15 Ω dynamic impedance at 5 mA ensures stable regulation across moderate load variations.

Zener voltage tolerance is tightly controlled at ±5%, and leakage current remains ≤0.1 mA up to 8 V reverse bias. Power dissipation is thermally derated at 4.0 mW/°C above 75°C ambient, supporting reliable operation in compact PCB layouts with limited heatsinking.

Key Specifications

Pinout & Package

DO-35 glass axial package with cathode identified by single black band; anode and cathode terminals are unmarked leads, with cathode band positioned within 1.5 mm of end cap. Lead length standard is 3/8″ (9.5 mm) for thermal rating compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with 1N6000B_T50A, the 1N4739A offers double the power rating in a larger DO-41 package-suitable for higher-current regulation-but the BZX55-C9V1 matches the DO-35 footprint while trading 0.4 V lower Zener voltage and reduced regulation precision for equivalent thermal performance.

Availability

1N6000B_T50A is available at Aetrix Electronics and suitable for voltage reference design, overvoltage protection, and microcontroller reset circuitry requiring stable component supply and consistent ±5% Zener tolerance.

Supply support for 1N6000B_T50A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, signal conditioning, and discrete components before its acquisition by ON Semiconductor in 2016.

The 1N6000B_T50A belongs to Fairchild's legacy 1N5985B–1N6025B Zener diode family, engineered for general-purpose voltage regulation in cost-sensitive industrial and consumer electronics where DO-35 reliability and ±5% tolerance meet design requirements.

FAQ

What is the nominal Zener voltage of the 1N6000B_T50A?

The 1N6000B_T50A has a nominal Zener voltage of 9.5 V, with a guaranteed minimum of 9.5 V and maximum of 10.5 V at 5 mA test current and ±5% tolerance. This value is measured under thermal equilibrium conditions at lead temperature of 30°C ±1°C with 3/8″ lead length, as defined in the Fairchild 1N5985B–1N6025B datasheet Rev. C2.

Does the 1N6000B_T50A have a cathode marking, and how is it identified?

Yes, the 1N6000B_T50A uses a DO-35 glass axial package with a single black cathode band located within 1.5 mm of the end cap. The cathode terminal is the lead adjacent to this band; the opposite lead is the anode. This marking follows Fairchild's standard top-marking convention for the 1Nxx series, confirmed in the "Top Mark Information" section of the datasheet.

What is the maximum allowable Zener current for the 1N6000B_T50A?

The maximum Zener current (I_ZM) for the 1N6000B_T50A is 50 mA, calculated from its 500 mW power rating and minimum Zener voltage of 9.5 V. This value represents worst-case current handling under thermal equilibrium and is validated in the "Electrical Characteristics" table on page 2 of the Fairchild datasheet.

How does the 1N6000B_T50A behave at elevated temperatures?

The 1N6000B_T50A is rated for operation from –65°C to +200°C, with power dissipation derated linearly at 4.0 mW/°C above 75°C lead temperature. At 100°C lead temperature, its usable power drops to 400 mW, preserving safe junction operation without requiring external heatsinking in typical through-hole layouts.

Is the 1N6000B_T50A suitable for use in automotive under-hood applications?

Yes, the 1N6000B_T50A supports operating temperatures up to +200°C and is constructed in a hermetically sealed DO-35 glass package, making it suitable for under-hood automotive applications such as engine control module voltage references or sensor signal conditioning-provided board-level thermal design maintains lead temperature ≤75°C for full 500 mW rating.