onsemi 1N6009B

Overview

1N6009B from Fairchild Semiconductor is a 22.8 V ±5% Zener diode in DO-35 glass package, rated for 500 mW power dissipation at TL ≤ 75°C with 4.0 mW/°C derating, 62 mA maximum Zener current (IZM), and 600 Ω typical Zener impedance (ZZ) at 5 mA test current - used for precision voltage regulation in low-power analog reference and overvoltage protection circuits.

For engineers reviewing the 1N6009B datasheet, pinout, applications, or equivalent options, key selection criteria include its 22.8 V nominal Zener voltage, DO-35 axial leaded package, 5% tolerance, 600 Ω dynamic impedance at 5 mA, and 0.1 mA leakage current at 18 V reverse bias - all critical for stable reference design and clamp circuit validation.

Technical Context

The 1N6009B operates as a silicon planar Zener diode with sharp reverse breakdown at 22.8 V, designed for stable DC voltage reference and transient suppression in linear power supplies and sensor signal conditioning. Its thermal equilibrium Zener voltage measurement uses 3/8″ lead length at TL = 30°C ±1°C per JEDEC standards.

It exhibits 600 Ω Zener impedance at IZ = 5 mA and 600 Ω knee impedance (ZZK) at IZK = 250 μA, with 0.1 mA leakage current at VR = 18 V. The device supports operation across -65°C to +200°C junction and storage temperature range, enabling use in industrial and automotive under-hood environments.

Key Specifications

Pinout & Package

DO-35 glass axial-leaded package with cathode indicated by color band; two-terminal device with anode and cathode leads. No internal bonding wires or substrate connections beyond standard diode terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N6009B, 1N4749A offers higher power and lower impedance but requires mechanical redesign, while BZX55C22 provides superior leakage and impedance at the cost of 0.8 V lower nominal voltage - making 1N6009B optimal for applications requiring exact 22.8 V regulation in space-constrained DO-35 layouts.

Availability

1N6009B is available at Aetrix Electronics and suitable for industrial power supply reference, overvoltage clamp for sensor inputs, and automotive body control module applications requiring stable component supply and long-term lifecycle support.

Supply support for 1N6009B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016; its legacy Zener diodes remain widely deployed in industrial and automotive systems.

The 1N6009B belongs to Fairchild's 1N5985B–1N6025B Zener diode family, engineered for precision voltage regulation and transient suppression in cost-sensitive, high-reliability applications across extended temperature ranges.

FAQ

What is the nominal Zener voltage and tolerance of the 1N6009B?

The 1N6009B has a nominal Zener voltage of 22.8 V with a ±5% tolerance, meaning its actual breakdown voltage falls between 21.66 V and 23.94 V at 5 mA test current. This specification is measured under thermal equilibrium conditions with 3/8″ lead length at TL = 30°C ±1°C, as defined in the Fairchild 1N5985B–1N6025B datasheet Rev. C2.

What is the maximum power dissipation and thermal derating behavior of the 1N6009B?

The 1N6009B is rated for 500 mW power dissipation at lead temperature (TL) ≤ 75°C, with linear derating of 4.0 mW/°C above that temperature. This means at TL = 100°C, its usable power drops to 400 mW. The derating curve ensures safe operation within the -65°C to +200°C junction temperature range specified for the device.

What is the Zener impedance of the 1N6009B and how does it affect regulation performance?

The 1N6009B has a typical Zener impedance (ZZ) of 600 Ω at IZ = 5 mA, which directly impacts its ability to maintain stable output voltage under varying load currents. Lower ZZ values yield tighter regulation; this value makes the 1N6009B suitable for moderate-precision references where load current changes are limited to <1 mA for sub-1% voltage deviation.

How does the leakage current of the 1N6009B compare to other Zener diodes in its voltage class?

The 1N6009B specifies 0.1 mA leakage current (IR) at VR = 18 V, which is typical for 22 V-class Zeners in the DO-35 package. This is higher than low-leakage variants like BZX55C22 (100 nA at 17.6 V) but acceptable for non-battery-critical applications where standby current is not the primary constraint.

Is the 1N6009B suitable for automotive under-hood applications?

Yes, the 1N6009B supports an operating temperature range of -65°C to +200°C and is constructed in a DO-35 glass package qualified for industrial and automotive environments. Its parameters are characterized across this full range, and it has been widely used in body control modules and engine control subsystems where reliability under thermal cycling is essential.