Microchip Technology 1N6015UR/TR

Overview

1N6015UR/TR from Microsemi is a surface-mount 43 V, 5% tolerance Zener diode in DO-213AA (SOD80) MELF package, rated for 500 mW power dissipation at 25°C, with 2.0 mA test current, 150 Ω dynamic impedance at IZT, and 0.1 µA reverse leakage at 33 V. It serves as a precision voltage reference or shunt regulator in low-power analog circuits.

For engineers reviewing the 1N6015UR/TR datasheet, 1N6015UR/TR pinout, 1N6015UR/TR application, or 1N6015UR/TR equivalent, key selection criteria include Zener voltage accuracy (±5%), thermal resistance (300°C/W), junction temperature range (–65°C to +175°C), RoHS compliance status, and DO-213AA mechanical compatibility with automated SMT placement.

Technical Context

This device operates in reverse breakdown mode with cathode-banded polarity, requiring the banded end to be held positive relative to the anode for regulation. Its Zener voltage is specified at 2.0 mA test current (IZT), with dynamic impedance measured at 10% rms AC modulation superimposed on IZT.

It exhibits a +0.095%/°C temperature coefficient and minimal capacitance (typical ~12 pF), making it suitable for stable DC reference generation rather than high-frequency signal clamping. The hermetically sealed glass package ensures reliability under thermal cycling and humidity exposure.

Key Specifications

Pinout & Package

DO-213AA (SOD80) is a hermetically sealed glass MELF package with two metallized end caps serving as anode and cathode terminals. Polarity is marked by a single cathode band; the banded end is the cathode and must be biased positive for Zener operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with BZX55-C43 and MMBZ5255B, the 1N6015UR/TR offers superior thermal robustness (300°C/W vs. ~400°C/W for DO-35 and ~500°C/W for SOT-23), hermetic sealing for long-term stability, and proven radiation hardness-making it the preferred choice for mission-critical industrial and aerospace voltage references.

Availability

1N6015UR/TR is available at Aetrix Electronics and suitable for industrial sensor conditioning, avionics monitoring, and medical instrumentation requiring stable component supply with guaranteed long-term continuity.

Supply support for 1N6015UR/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and RF components for aerospace, defense, and industrial markets.

The 1N6015UR/TR belongs to Microsemi's legacy DO-213AA Zener diode family, engineered for precision voltage regulation in environments demanding radiation tolerance, wide temperature operation, and hermetic reliability.

FAQ

What is the Zener voltage tolerance and test current for 1N6015UR/TR?

The 1N6015UR/TR has a nominal Zener voltage of 43 V with a ±5% tolerance, specified at a test current (I_ZT) of 2.0 mA. This tolerance ensures predictable regulation within 40.85 V to 45.15 V under standard operating conditions, supporting accurate reference design in analog circuits where tight voltage control is required. The 2.0 mA I_ZT reflects the optimal bias point for measuring both V_Z and dynamic impedance.

Is 1N6015UR/TR RoHS compliant?

Yes, the 1N6015UR/TR is RoHS compliant, featuring matte-tin end-cap plating suitable for lead-free reflow soldering per JEDEC J-STD-020. This compliance applies to the commercial-grade version only, as indicated by the "e3" suffix in Microsemi's nomenclature system. The device meets EU Directive 2011/65/EU requirements without exemption, and its RoHS status is verified through material declarations and process audits.

What is the maximum reverse leakage current for 1N6015UR/TR and at what voltage is it measured?

The maximum reverse leakage current for 1N6015UR/TR is 0.1 µA, measured at a reverse voltage (V_R) of 33 V. This low leakage ensures minimal parasitic current draw in high-impedance reference circuits, preserving accuracy in battery-powered or low-power sensor interfaces. The value is guaranteed across the full operating temperature range (–65°C to +175°C) and reflects the device's stable junction characteristics.

Can 1N6015UR/TR be used in high-reliability aerospace applications?

Yes, 1N6015UR/TR can be used in high-reliability aerospace applications when procured with appropriate screening levels (e.g., JAN, JANTX, JANTXV, or JANS prefixes per MIL-PRF-19500). While the base 1N6015UR/TR is commercial-grade, its hermetic DO-213AA package, radiation-hardened design per MicroNote 050, and wide junction temperature range make it suitable for qualification into flight-critical systems with proper upscreening and lot traceability.

What is the thermal resistance and how does it affect PCB layout for 1N6015UR/TR?

The thermal resistance junction-to-ambient (R_θJA) for 1N6015UR/TR is 300°C/W when mounted on a standard FR4 board with 1 oz copper and Microsemi's recommended footprint. This means that at full 500 mW dissipation, the junction temperature rises 150°C above ambient-so layout must include adequate copper area around end caps and avoid thermal isolation. Use of thermal vias and larger pads significantly improves heat transfer and extends safe operating life.