onsemi 1N6016B

Overview

1N6016B from Fairchild Semiconductor is a 47 V ±5% Zener diode in DO-35 glass package, rated for 500 mW power dissipation at TL ≤ 75°C with 4.0 mW/°C derating, 2 mA test current, and 170 mA maximum Zener current (IZM), used for precision voltage regulation in low-power analog reference and overvoltage protection circuits.

For engineers reviewing the 1N6016B datasheet, pinout, applications, or equivalent options, key selection factors include its 47 V nominal Zener voltage, 1000 Ω dynamic impedance at IZ, 0.1 mA leakage current at 36 V reverse bias, and DO-35 mechanical compatibility with legacy through-hole designs.

Technical Context

The 1N6016B operates as a two-terminal voltage-reference device with sharp Zener breakdown at 47 V, exhibiting 1000 Ω Zener impedance (ZZ) at 2 mA test current and 1300 Ω knee impedance (ZZK) at 250 μA, ensuring stable regulation under light-load conditions. Its thermal design relies on 3/8″ lead length for power derating compliance.

It features a glass-passivated DO-35 package with cathode band marking, supports operation from –65°C to +200°C, and maintains 5% voltage tolerance across temperature and aging-critical for unregulated DC supply clamping and feedback-sense reference applications.

Key Specifications

Pinout & Package

DO-35 glass axial package with cathode indicated by color band; two-terminal device requiring no external biasing or control signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4756A and BZX55-C47, the 1N6016B offers identical DO-35 form factor and 500 mW rating but delivers verified 1000 Ω impedance at 2 mA-making it optimal for low-current reference designs where board space and thermal constraints match legacy DO-35 layouts.

Availability

1N6016B is available at Aetrix Electronics and suitable for voltage reference circuits, overvoltage protection systems, and feedback sensing applications requiring stable component supply and long-lifecycle support.

Supply support for 1N6016B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The 1N6016B belongs to Fairchild's legacy 1N5985B–1N6025B Zener diode family, engineered for general-purpose voltage regulation and transient suppression in cost-sensitive, high-reliability industrial and telecom equipment.

FAQ

What is the nominal Zener voltage and tolerance of the 1N6016B?

The 1N6016B has a nominal Zener voltage of 47 V with a tolerance of ±5%, meaning its actual breakdown voltage falls between 44.65 V and 49.35 V at 2 mA test current and 25°C ambient. This tolerance is guaranteed across the full operating temperature range and is measured per Fairchild's Rev. C2 specification. The 1N6016B maintains this specification without requiring binning or sorting.

What is the maximum power dissipation and derating behavior of the 1N6016B?

The 1N6016B is rated for 500 mW power dissipation at lead temperature (T_L) ≤ 75°C with 3/8″ lead length. Above 75°C, it derates linearly at 4.0 mW/°C, reaching zero dissipation at 200°C junction temperature. This derating curve is defined in the Absolute Maximum Ratings table and must be applied in thermal design calculations for PCB layout and ambient conditions. The 1N6016B does not specify a separate surface-mount thermal resistance.

How does the Zener impedance of the 1N6016B affect regulation performance?

The 1N6016B exhibits 1000 Ω Zener impedance (Z_Z) at 2 mA test current, which directly impacts output voltage variation under changing load current. For example, a 1 mA load shift causes ~1 V deviation-critical in precision references. Its 1300 Ω knee impedance (Z_ZK) at 250 μA further defines minimum usable current. These values are measured and published in the Electrical Characteristics table of the 1N6016B datasheet.

What is the leakage current specification for the 1N6016B, and at what reverse voltage is it measured?

The 1N6016B specifies a maximum leakage current (I_R) of 0.1 mA at a reverse voltage (V_R) of 36 V, measured at 25°C. This parameter ensures minimal parasitic current draw in high-impedance bias networks-such as those feeding op-amp inputs or comparator thresholds. Leakage remains below 0.1 mA up to 36 V, well below its 44.65 V minimum Zener voltage, confirming sharp breakdown onset.

Is the 1N6016B compatible with automated through-hole assembly processes?

Yes, the 1N6016B uses the standard DO-35 glass axial package with 0.40–0.50 mm lead diameter and 2.0–2.5 mm body diameter, fully compatible with industry-standard wave soldering, selective soldering, and axial insertion equipment. Its cathode band marking is machine-readable, and the device meets JEDEC DO-35 mechanical specifications. No special tooling or process adjustments are required for 1N6016B placement or soldering.