Semtech Corporation 1N6079

Overview

1N6079 from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection of 22V-rated power or I/O lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), and stable 27.5–28V clamping across temperature and current range. It protects USB PD, Type-C VBus, and load switch inputs in industrial and portable electronics.

For engineers reviewing the 1N6079 datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage stability under surge, low dynamic resistance (20 mΩ), junction capacitance (175 pF at 22V), thermal robustness (−40°C to +125°C), and DFN 1.6×1.6mm package compatibility with high-density PCB layouts.

Technical Context

The 1N6079 uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that turns on the shunt path when transient voltage exceeds breakdown. Unlike conventional TVS diodes, its clamping voltage remains nearly constant-27.5–28V-across 24A to 40A peak pulse current and −40°C to +125°C operating temperature.

This behavior stems from the FET's decreasing R_DS(on) under surge, yielding ultra-low dynamic resistance (20 mΩ) and eliminating the linear VC = VBR + IPP × RDYN dependency. The device handles unsymmetrical surges per IEC 61000-4-5 (±1kV, 1.2/50μs + 8/20μs, RS = 42Ω) and EFT up to ±4kV (IEC 61000-4-4).

Key Specifications

Pinout & Package

1N6079 is housed in a Pb-free, RoHS-compliant DFN package measuring 1.6 mm × 1.6 mm × 0.55 mm with six terminals. The package features three parallel ground pins (1, 2, 3) and three parallel input pins (4, 5, 6), requiring all six pins to be connected for full 40A surge rating and minimal parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMAJ22A and TDS2211P, the 1N6079 delivers superior clamping stability and thermal resilience-critical for USB PD and industrial load switch protection-while sharing identical form, fit, and function with TDS2211P, making it a direct replacement in existing designs.

Availability

1N6079 is available at Aetrix Electronics and suitable for USB Power Delivery interfaces, industrial load switch inputs, and IoT device power rails requiring stable component supply, long-term lifecycle support, and guaranteed RoHS/WEEE compliance.

Supply support for 1N6079 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semtech Corporation is a U.S.-based fabless semiconductor company specializing in analog and mixed-signal ICs for precision sensing, protection, and connectivity.

The 1N6079 belongs to Semtech's Transient Diverting Suppressor (TDS) product line, engineered to replace conventional TVS diodes in high-reliability 22V power and interface protection applications where clamping voltage stability across temperature and current is critical.

FAQ

What is the primary protection function of the 1N6079?

The 1N6079 functions as a transient diverting suppressor that shunts high-energy electrical overstress (EOS) events-including ESD, lightning-induced surges, and EFT-to ground using an integrated surge-rated FET. Its core purpose is to clamp the protected line at a stable 27.5–28V during 40A 8/20μs transients, safeguarding downstream ICs such as USB PD controllers and load switches. This mechanism differs fundamentally from standard TVS diodes by maintaining consistent clamping across temperature and current.

Does the 1N6079 require external bias or control signals to operate?

No, the 1N6079 operates autonomously without external bias, enable signals, or configuration. It integrates a precision trigger circuit that activates the internal shunt FET when transient voltage exceeds its breakdown threshold (~25–27.9V). Once triggered, the FET conducts surge current directly to ground through pins 1–3. No PCB-level control logic, pull-up resistors, or timing components are needed-making the 1N6079 a true plug-and-protect solution.

How does the 1N6079 compare to traditional TVS diodes in clamping performance?

Unlike traditional TVS diodes whose clamping voltage rises linearly with peak pulse current (VC = VBR + IPP × RDYN), the 1N6079 maintains a nearly flat clamping voltage of 27.5–28V from 24A to 40A and across −40°C to +125°C. This results from its FET-based architecture and ultra-low 20 mΩ dynamic resistance. At 125°C, a typical 22V TVS may clamp above 38V-exceeding safe margins for many 24V-tolerant ICs-whereas the 1N6079 clamping remains unchanged.

Can the 1N6079 be used on high-speed data lines like USB SuperSpeed or PCIe?

No, the 1N6079 is not suitable for high-speed data lines due to its 175 pF junction capacitance at 22V, which would severely degrade signal integrity on differential pairs operating above ~100 Mbps. It is specifically designed for 22V power rails (e.g., USB PD VBus, load switch inputs) and low-speed control lines. For USB SS, DP/DM, or PCIe lanes, Semtech recommends low-capacitance TVS devices like RClamp3371ZC (<0.25 pF) instead of the 1N6079.

What PCB layout practices maximize the 1N6079's surge-handling capability?

To achieve the full 40A rating, all three GND pins (1, 2, 3) must connect to a solid ground plane using ≥3 thermal vias each, and all three IN pins (4, 5, 6) must route in parallel with minimal trace length-ideally <2 mm-from the protected connector. Place the 1N6079 within 3 mm of the entry point. Avoid stubs, right-angle bends, or shared return paths. These practices minimize parasitic inductance, ensuring transient energy is diverted efficiently rather than coupled into adjacent nets.