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Microchip Technology 1N6309US/TR
- Part No.:
- 1N6309US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N6309US/TR.pdf
- Description:
- DIODE ZENER 2.4V 500MW SQ-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:86
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Product details
Overview
1N6309US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode with nominal 2.4 V Zener voltage, ±5% tolerance, 0.5 W power rating, and B-SQ MELF surface-mount package. It serves as a precision voltage reference and regulator in high-reliability analog circuits operating across –65 °C to +175 °C, such as avionics power supervision and radiation-hardened sensor signal conditioning.
For engineers reviewing the 1N6309US/TR datasheet, 1N6309US/TR pinout, 1N6309US/TR application, or 1N6309US/TR equivalent, key selection criteria include its MIL-PRF-19500/533 qualification (JAN/JANTXV levels), 35 °C/W junction-to-end-cap thermal resistance, low 1.4 V forward voltage at 1.0 A, and robust ESD immunity per MIL-STD-750 Method 1020.
Technical Context
This device operates in reverse-biased breakdown mode with a specified Zener test current IZ2 of 20 mA and dynamic impedance ZZT of 30 Ω at that point. Its regulation performance is characterized by ∆VZ = 1.50 V over 10–50% of IZM and a temperature coefficient αVZ of –0.085 %/°C, indicating stable low-voltage reference behavior under thermal stress.
The 1N6309US/TR uses Category III internal metallurgical bonds per MIL-PRF-19500/533, optimized for reliability in 2.4–6.8 V Zener range devices. Its voidless glass construction and copper end caps with Sn/Pb finish ensure hermeticity and solderability up to 260 °C for 10 seconds, supporting high-integrity reflow assembly in aerospace-grade PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 2.4 V nominal at 20 mA - defines precise clamping/reference level for low-voltage analog rails. |
| Power Rating (PD) | 0.5 W at TEC = 150 °C - supports continuous regulation in compact, thermally constrained layouts. |
| Dynamic Impedance (ZZT) | 30 Ω at IZ2 = 20 mA - ensures minimal output voltage variation under load transients. |
| Temp Coefficient (αVZ) | –0.085 %/°C - enables predictable, low-drift performance across –65 °C to +175 °C operating range. |
| Junction-to-End Cap Rθ | 35 °C/W - allows accurate thermal modeling when mounted on metal-core or thermally enhanced substrates. |
| Max Surge Current (IZSM) | 177 A (8.3 ms square wave) - withstands transient overvoltage events without degradation. |
| Reverse Leakage (IR1) | 100 µA at VR = 1.0 V - guarantees low standby power loss in always-on monitoring circuits. |
Pinout & Package
Package: B-SQ MELF (glass cylindrical surface-mount) per Microsemi T4-LDS-0193-1, with cathode indicated by band. Dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side connection | Connected to circuit ground or lower potential node during Zener operation; carries full forward current if biased forward. |
| Cathode | Zener breakdown terminal / regulated output node | Connected to voltage rail requiring stabilization; maintains 2.4 V relative to anode when reverse-biased above knee voltage. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/533 qualification | Available in JAN, JANTX, JANTXV, and JANS reliability levels - meets stringent screening and lot traceability for defense/aerospace deployment. |
| Voidless hermetic glass seal | Eliminates internal delamination and moisture ingress - ensures >20-year operational life in humid, high-vibration environments. |
| Category III metallurgical bond | Optimized interfacial strength for 1N6309US–1N6320US series - prevents bond fatigue under thermal cycling between –65 °C and +175 °C. |
| ESD immunity | Non-sensitive per MIL-STD-750 Method 1020 - survives direct electrostatic discharge without parameter shift or failure. |
| Radiation hardness | Inherently resistant per MicroNote 050 - suitable for low-dose-rate space applications without additional shielding. |
Applications
| Avionics Power Supervision | Satellite Sensor Biasing |
|---|---|
Use Scenario: Monitoring 3.3 V and 2.5 V supply rails in flight control computers to trigger fault shutdown before undervoltage lockout. IC Role / Device Role / Timing Role: Precision shunt reference providing stable 2.4 V threshold for comparator input. Use Value: Tight 5% VZ tolerance and –0.085 %/°C TC enable reliable trip-point accuracy across –55 °C to +125 °C operational envelope. | Use Scenario: Establishing bias voltage for radiation-tolerant CMOS image sensor front-end amplifiers in LEO satellites. IC Role / Device Role / Timing Role: Low-noise Zener reference (1 µV/√Hz @ 250 µA) stabilizing amplifier DC operating point. Use Value: Inherent radiation hardness and 177 A surge rating protect against single-event transients and launch-induced voltage spikes. |
| Downhole Oilfield Instrumentation | Nuclear Reactor Control Interface |
Use Scenario: Regulating excitation voltage for piezoresistive pressure transducers exposed to 175 °C wellbore temperatures. IC Role / Device Role / Timing Role: High-temperature-stable shunt regulator maintaining 2.4 V reference despite extreme thermal gradients. Use Value: 35 °C/W RθJEC and –65 °C to +175 °C TJ rating allow direct mounting on heat-sinking metal housings without derating penalties. | Use Scenario: Providing fail-safe voltage clamp on safety-critical I/O lines interfacing reactor neutron flux monitors. IC Role / Device Role / Timing Role: MIL-qualified transient suppressor preventing false tripping due to EMI or switching noise. Use Value: JANTXV-level screening, hermetic glass seal, and 100 µA IR1 at 1.0 V ensure zero latent defects and long-term parametric stability in safety-grade systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5221B | 0.5 W, 2.4 V, ±5%, DO-35 axial package - lacks MIL qualification and hermetic glass seal. | Commercial industrial controls only; not suitable for aerospace or nuclear environments. | Select when cost sensitivity outweighs reliability requirements and through-hole assembly is preferred. |
| CMHZ5221B-TR | 0.25 W, 2.4 V, ±5%, SOD-123 - lower power, plastic package, no military screening. | Consumer electronics and non-critical automotive modules where radiation hardness is irrelevant. | Choose for high-volume, RoHS-compliant surface-mount designs with relaxed lifetime and environmental specs. |
Compared with 1N6309US/TR, both alternatives offer identical nominal Zener voltage but lack MIL-PRF-19500/533 qualification, hermetic sealing, and high-temperature capability - making them unsuitable for mission-critical systems requiring guaranteed 20+ year field life under thermal, mechanical, and radiation stress.
Availability
1N6309US/TR is available at Aetrix Electronics and suitable for avionics power supervision, satellite sensor biasing, and downhole oilfield instrumentation requiring stable component supply with full traceability and extended lifecycle support.
Supply support for 1N6309US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified analog and mixed-signal components.
The 1N6309US/TR belongs to Microsemi's legacy MIL-PRF-19500/533 qualified Zener diode family, designed specifically for voltage regulation in defense, aerospace, and nuclear applications where failure is not an option.
FAQ
What is the Zener voltage tolerance for 1N6309US/TR?
The 1N6309US/TR has a nominal Zener voltage of 2.4 V with a standard tolerance of ±5%, as confirmed in the Electrical Characteristics table on page 3 of Microsemi T4-LDS-0193-1 Rev. 1. Tighter tolerances (±1% and ±2%) are available under different part number suffixes (e.g., D or C), but the /TR variant corresponds to the standard ±5% version. This tolerance applies at 25 °C with IZ2 = 20 mA.
Is 1N6309US/TR suitable for surface-mount reflow assembly?
Yes, the 1N6309US/TR is qualified for surface-mount reflow assembly with a maximum solder temperature of 260 °C for 10 seconds, per the Maximum Ratings table. Its B-SQ MELF package and tin/lead (Sn/Pb) or RoHS-compliant matte tin end cap finish ensure reliable wetting and joint integrity on FR4 PCBs under standard reflow profiles.
Does 1N6309US/TR meet MIL-PRF-19500/533 requirements?
Yes, the 1N6309US/TR is explicitly qualified per MIL-PRF-19500/533 and available in JAN, JANTX, JANTXV, and JANS reliability levels. The datasheet states it is "Qualified per MIL-PRF-19500/533" and specifies Category III internal metallurgical bonds for this part number group (1N6309US–1N6320US), confirming full compliance with military screening and testing standards.
What is the maximum steady-state power dissipation for 1N6309US/TR?
The 1N6309US/TR has a steady-state power dissipation (PD) rating of 0.5 W at an end-cap temperature (TEC) of 150 °C. Derating is required above this temperature, following the curve in Figure 1 (RθJEC = 35 °C/W). At 25 °C ambient, the usable power remains near 0.5 W due to its low thermal resistance and hermetic construction.
How does the temperature coefficient affect 1N6309US/TR performance?
The 1N6309US/TR exhibits a Zener voltage temperature coefficient (αVZ) of –0.085 %/°C, meaning its 2.4 V Zener voltage decreases by approximately 2.04 mV per °C rise in junction temperature. This negative TC is typical for low-voltage Zeners and must be factored into precision reference designs operating across wide thermal ranges, especially in unregulated environments like avionics bays or downhole tools.
1N6309US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 2.4 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 30 Ohms
- Current - Reverse Leakage @ Vr:
- 100 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
1N6309US/TR FAQ
1.How can I place an order for 1N6309US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6309US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6309US/TR reliable?
The price and inventory of 1N6309US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6309US/TR is usually 5 days.
3.What payment methods are accepted for 1N6309US/TR?
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Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6309US/TR?
1N6309US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6309US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6309US/TR?
For technical support, including 1N6309US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6309US/TR requirements.
6.How does Aetrix verify that 1N6309US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6309US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6309US/TR meets industry standards.
7.What is the process for return or replacement of 1N6309US/TR?
All 1N6309US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6309US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6309US/TR part is unused and in its original packaging.
Return procedure for 1N6309US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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