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Microchip Technology 1N6310US/TR
- Part No.:
- 1N6310US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N6310US/TR.pdf
- Description:
- DIODE ZENER 2.7V 500MW SQ-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:70
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Product details
Overview
1N6310US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode with nominal 2.7 V zener voltage, ±5% tolerance, 0.5 W power rating, and MELF (B-SQ) surface-mount package. It delivers stable voltage regulation in high-reliability aerospace, defense, and downhole instrumentation systems where failure is unacceptable.
For engineers reviewing the 1N6310US/TR datasheet, 1N6310US/TR pinout, 1N6310US/TR application, or 1N6310US/TR equivalent, this part supports precision biasing, reference stabilization, and overvoltage clamping in temperature-critical, radiation-exposed, and ESD-hostile environments requiring MIL-PRF-19500/533 compliance.
Technical Context
This Zener diode operates in reverse breakdown with a specified test current IZT of 20 mA and exhibits a dynamic impedance ZZT of 30 Ω at that point. Its junction-to-end-cap thermal resistance is 35 °C/W for the 1N6309US–1N6320US group, enabling reliable power dissipation up to 0.5 W at TEC = 150 °C.
The device features internal Category I metallurgical bonds, RoHS-compliant tin/lead or matte-tin terminations, and inherent radiation hardness per MicroNote 050. It is non-sensitive to ESD per MIL-STD-750 Method 1020 and rated for operation from –65 °C to +175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 2.7 V nominal at 20 mA - defines precise DC reference or clamp threshold under stable bias conditions. |
| Power Rating (PD) | 0.5 W at TEC = 150 °C - sets maximum continuous dissipation without derating on thermally anchored end caps. |
| Dynamic Impedance (ZZT) | 30 Ω at IZT = 20 mA - determines output voltage stability under small-signal AC load variations. |
| Max Reverse Current (IR1) | 60 µA at VR = 1.0 V - ensures low leakage in standby or high-impedance sensing circuits. |
| Junction Temperature Range | –65 °C to +175 °C - enables deployment in extreme environmental conditions including space and oilfield applications. |
| Temp. Coefficient (αVZ) | –0.080 %/°C - quantifies voltage drift with temperature, critical for precision reference design. |
| Noise Density (ND) | 1 µV/√Hz @ 1–3 kHz - specifies low-frequency noise floor for analog reference and sensor conditioning. |
Pinout & Package
Hermetically sealed voidless glass MELF (B-SQ) package with copper end-cap terminals; cathode indicated by band. Weight: 0.0945 g. Dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side connection | Connected to circuit ground or lower potential node during forward bias; serves as return path in Zener regulation. |
| Cathode | Reverse breakdown terminal / high-side connection | Banded end; connected to regulated voltage node; carries Zener current when reverse-biased above VZ. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass construction | Eliminates internal delamination and moisture ingress, ensuring long-term parameter stability in harsh environments. |
| MIL-PRF-19500/533 qualification | Validated reliability levels (JAN/JANTX/JANTXV/JANS) support mission-critical designs requiring zero-failure tolerance. |
| Category I metallurgical bond | Ensures mechanical integrity and thermal cycling robustness for 1N6309US–1N6320US series including 1N6310US/TR. |
| ESD immunity per MIL-STD-750 Method 1020 | Enables safe handling and integration into unshielded or high-static industrial assembly lines without special precautions. |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050 - suitable for low-dose-rate space and nuclear instrumentation applications. |
Applications
| Aerospace Power Conditioning | Downhole Sensor Reference |
|---|---|
Use Scenario: Regulating bias voltage for radiation-tolerant ADC drivers in satellite telemetry modules. IC Role / Device Role / Timing Role: Precision voltage reference and overvoltage clamp protecting downstream analog front-end circuitry. Use Value: Maintains 2.7 V reference stability across –65 °C to +125 °C with <±0.08%/°C drift and <30 Ω dynamic impedance. |
Use Scenario: Providing stable excitation voltage for piezoresistive pressure transducers in oil/gas well logging tools. IC Role / Device Role / Timing Role: Low-noise, high-temperature-stable Zener reference source operating continuously at 175 °C ambient. Use Value: Delivers 1 µV/√Hz noise density and 60 µA max IR at 1 V VR - critical for sub-mV signal integrity in millivolt-level sensor outputs. |
| Defense System Voltage Clamping | Nuclear Instrumentation Biasing |
Use Scenario: Protecting FPGA I/O banks from transient overvoltage events in ruggedized battlefield radios. IC Role / Device Role / Timing Role: Fast-response shunt clamp activated during ESD or lightning-induced surges. Use Value: Withstands 2.2 A non-repetitive 8.3 ms surge current and exhibits no parametric shift after MIL-STD-750 ESD testing. |
Use Scenario: Supplying stable bias to gamma-ray detector preamplifiers in reactor monitoring systems. IC Role / Device Role / Timing Role: Radiation-hardened voltage reference maintaining accuracy under cumulative ionizing dose exposure. Use Value: Validated radiation hardness per MicroNote 050 ensures <1% VZ shift after 100 krad(Si), eliminating recalibration cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6310US | Same electrical specs and package; TR suffix denotes tape-and-reel packaging - identical die and construction. | No functional difference; both meet MIL-PRF-19500/533 JANTX level and share identical thermal, noise, and reliability characteristics. | Select 1N6310US/TR for automated SMT placement; choose 1N6310US for manual or low-volume prototyping. |
| 1N6310DUS | Same 2.7 V nominal Zener voltage but ±1% tolerance (D suffix) vs. ±5% (blank suffix); otherwise identical package, power, and thermal specs. | Used where tighter initial voltage accuracy is required - e.g., calibration references or metrology-grade circuits - at higher cost. | Choose 1N6310DUS only if system-level tolerance budget requires <±1% VZ; otherwise 1N6310US/TR provides optimal cost/reliability balance. |
Compared with 1N6310US/TR, 1N6310US offers identical performance in bulk packaging, while 1N6310DUS trades wider tolerance for higher initial accuracy - neither is pin-compatible with non-US variants due to differing metallurgical bond categories and thermal resistance profiles.
Availability
1N6310US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, downhole sensor reference, and defense system voltage clamping requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N6310US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified components.
The 1N6309US–1N6355DUS series was designed for mission-critical voltage regulation in aerospace, defense, and energy exploration systems demanding MIL-PRF-19500/533 compliance and extreme environmental resilience.
FAQ
What is the Zener voltage tolerance of 1N6310US/TR?
The 1N6310US/TR has a nominal Zener voltage of 2.7 V with a standard tolerance of ±5%, as indicated by the absence of a tolerance suffix (C = ±2%, D = ±1%). This tolerance applies at 25 °C with IZT = 20 mA and is validated per MIL-PRF-19500/533 test requirements.
Is 1N6310US/TR qualified to MIL-PRF-19500/533?
Yes, 1N6310US/TR is qualified to MIL-PRF-19500/533 and available in JAN, JANTX, JANTXV, and JANS reliability levels. The "US" suffix denotes the MELF package variant meeting all screening, testing, and documentation requirements of that specification.
What is the maximum steady-state power dissipation for 1N6310US/TR?
The 1N6310US/TR has a steady-state power dissipation rating of 0.5 W at an end-cap temperature (TEC) of 150 °C. Derating follows a linear curve with RθJEC = 35 °C/W for the 1N6309US–1N6320US group, reaching zero power at 167.5 °C TEC.
Does 1N6310US/TR have radiation hardness certification?
Yes, 1N6310US/TR exhibits inherent radiation hardness validated per Microsemi MicroNote 050. It maintains Zener voltage stability under total ionizing dose (TID) exposure, making it suitable for low-dose-rate space and nuclear instrumentation applications without additional shielding.
What is the cathode identification method on 1N6310US/TR?
The cathode of 1N6310US/TR is identified by a visible band on the glass body of the MELF package. This band marks the copper end-cap terminal that must be connected to the higher-potential node during reverse-bias Zener operation.
1N6310US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 2.7 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 30 Ohms
- Current - Reverse Leakage @ Vr:
- 60 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
1N6310US/TR FAQ
1.How can I place an order for 1N6310US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6310US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6310US/TR reliable?
The price and inventory of 1N6310US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6310US/TR is usually 5 days.
3.What payment methods are accepted for 1N6310US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6310US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6310US/TR?
1N6310US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6310US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6310US/TR?
For technical support, including 1N6310US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6310US/TR requirements.
6.How does Aetrix verify that 1N6310US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6310US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6310US/TR meets industry standards.
7.What is the process for return or replacement of 1N6310US/TR?
All 1N6310US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6310US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6310US/TR part is unused and in its original packaging.
Return procedure for 1N6310US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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