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Microchip Technology 1N6313US/TR
- Part No.:
- 1N6313US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N6313US/TR.pdf
- Description:
- DIODE ZENER 3.6V 500MW SQ-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:88
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Product details
Overview
1N6313US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode with nominal 3.6 V zener voltage, ±5% tolerance, 0.5 W power rating, and 20 mA test current - used for precision voltage regulation in high-reliability aerospace and defense power supply circuits.
For engineers reviewing the 1N6313US/TR datasheet, 1N6313US/TR pinout, 1N6313US/TR application, or 1N6313US/TR equivalent, this part supports critical biasing, reference, and overvoltage protection functions where ESD immunity, radiation hardness, and stable regulation across –65 °C to +175 °C are mandatory design requirements.
Technical Context
This Zener diode operates in reverse breakdown with a specified 3.6 V nominal zener voltage at 20 mA (IZ2), dynamic impedance of 25 Ω at IZ2, and 1.6 V voltage regulation (∆VZ) between 10%–50% of IZM. Its junction-to-end-cap thermal resistance is 35 °C/W for the 1N6309US–1N6320US series.
It features internal Category I metallurgical bonds, non-sensitive ESD performance per MIL-STD-750 Method 1020, and inherent radiation hardness documented in MicroNote 050 - all validated under MIL-PRF-19500/533 qualification at JAN/JANTXV levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.6 V nominal at 20 mA - defines precise DC reference point for feedback loops and voltage clamping. |
| Power Dissipation (PD) | 0.5 W at TEC = 150 °C - sets maximum continuous power handling before thermal derating applies. |
| Dynamic Impedance (ZZT) | 25 Ω at IZ2 = 20 mA - determines output voltage stability under load current variation. |
| Max Reverse Current (IR1) | 3 µA at VR = 1.0 V - ensures low leakage in standby or high-impedance bias networks. |
| Junction Temperature Range | –65 °C to +175 °C - enables operation in extreme environmental conditions without parameter drift. |
| Temp. Coefficient (αVZ) | –0.065 %/°C - quantifies negative drift of VZ with rising temperature for thermal compensation design. |
| Forward Voltage (VF) | 1.4 V at 1.0 A - defines conduction threshold when used in forward-biased protection or clamp configurations. |
Pinout & Package
1N6313US/TR uses a B-SQ MELF (cylindrical surface-mount) package with axial symmetry and cathode band marking. Hermetically sealed voidless glass case contains tungsten slugs and copper end caps with Sn/Pb or RoHS-compliant matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side connection | Connected to ground or lower-potential node in shunt regulator configuration. |
| Cathode | Zener breakdown terminal / high-side connection | Banded end; connected to input rail or regulated node - carries reverse current during regulation. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and long-term parameter shift - essential for 20+ year mission life in space-grade systems. |
| Category I internal metallurgical bond | Ensures mechanical integrity and thermal cycling reliability up to 1,000 cycles between –65 °C and +175 °C. |
| MIL-PRF-19500/533 qualification | Validated to JAN/JANTXV reliability levels - includes screening for burn-in, temperature cycling, and hermeticity testing. |
| ESD immunity per MIL-STD-750 Method 1020 | No parametric degradation after exposure to ≥2 kV HBM - eliminates need for external ESD protection in sensitive analog nodes. |
| Inherent radiation hardness | Resists total ionizing dose (TID) effects per MicroNote 050 - suitable for low-earth orbit and nuclear instrumentation applications. |
Applications
| Avionics Power Sequencing | Satellite Voltage Reference |
|---|---|
Use Scenario: Regulating auxiliary rail voltages during cold-start sequencing in flight control computers. IC Role / Device Role / Timing Role: Shunt Zener reference providing stable 3.6 V bias for supervisor ICs and reset generators. Use Value: Maintains regulation within ±5% across –55 °C to +125 °C ambient while surviving vibration and thermal shock per MIL-STD-810. |
Use Scenario: Generating precision reference for ADCs measuring solar array current in LEO satellites. IC Role / Device Role / Timing Role: Low-noise (1 µV/√Hz), radiation-hardened voltage reference in analog front-end signal chain. Use Value: Delivers <1.6 V regulation error over full current range and maintains stability after 100 krad(Si) TID exposure. |
| Nuclear Instrumentation Biasing | Tactical Radio RF Stage Protection |
Use Scenario: Biasing photomultiplier tube (PMT) dynodes in radiation detection equipment deployed in reactor environments. IC Role / Device Role / Timing Role: High-reliability Zener clamp establishing graded dynode potentials under neutron flux. Use Value: Operates continuously at +150 °C junction temperature with no parameter shift - validated per MIL-PRF-19500/533 JANS level. |
Use Scenario: Protecting RF power amplifier gate drivers from transient overvoltage during antenna switching transients. IC Role / Device Role / Timing Role: Fast-response shunt clamp limiting gate-source voltage to ≤3.6 V during ESD events. Use Value: Withstands 8.3 ms surge current up to 3 A and exhibits <3 µA leakage at 1 V - minimizing quiescent power loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6313US | Same electrical specs but supplied in bulk (non-tape-and-reel) packaging; no TR suffix. | Preferred for prototyping or low-volume hand-soldered assemblies where reel logistics are unnecessary. | Select 1N6313US/TR for automated SMT placement; choose 1N6313US for bench evaluation or repair kits. |
| SMF3.6A | Surface-mount TVS diode with 3.6 V working voltage, 600 W peak pulse power, but higher dynamic impedance (~50 Ω) and no MIL qualification. | Suitable for commercial-grade transient suppression only - lacks radiation hardness, ESD immunity, and temperature range. | Use SMF3.6A only in non-critical, cost-sensitive consumer applications; avoid where MIL-PRF-19500 compliance is required. |
Compared with 1N6313US/TR, the 1N6313US offers identical performance in bulk form but lacks tape-and-reel convenience for production, while SMF3.6A provides higher surge capability at the expense of regulation precision, reliability screening, and extended temperature operation.
Availability
1N6313US/TR is available at Aetrix Electronics and suitable for avionics power sequencing, satellite voltage reference, nuclear instrumentation biasing, and tactical radio RF stage protection requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N6313US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-qualified components.
The 1N6313US/TR belongs to Microsemi's legacy MIL-PRF-19500/533 qualified Zener diode family - engineered specifically for voltage regulation in mission-critical systems where failure is not an option.
FAQ
What is the Zener voltage tolerance for 1N6313US/TR?
The 1N6313US/TR has a nominal Zener voltage of 3.6 V with a standard tolerance of ±5%, as confirmed in the Electrical Characteristics table on page 3 of T4-LDS-0193-1 Rev. 1. Tighter tolerances (±1% or ±2%) require different suffixes (e.g., D or C) and are not applicable to the TR-suffixed commercial version.
Is 1N6313US/TR qualified to MIL-PRF-19500/533 standards?
Yes, the 1N6313US/TR is qualified per MIL-PRF-19500/533 at JAN and JANTXV reliability levels, as stated in the DESCRIPTION section on page 1. This includes full screening for hermeticity, temperature cycling, and burn-in - making it suitable for high-integrity defense and space applications.
What is the maximum steady-state power dissipation for 1N6313US/TR?
The 1N6313US/TR has a steady-state power dissipation (PD) of 0.5 W at end-cap temperature (TEC) = 150 °C, as specified in the Maximum Ratings table. Derating is required above 150 °C per Figure 1, with RθJEC = 35 °C/W for this device group (1N6309US–1N6320US).
Does 1N6313US/TR have radiation hardness certification?
Yes, the 1N6313US/TR exhibits inherent radiation hardness as described in Microsemi MicroNote 050. It is not individually certified per MIL-STD-883, but its construction - including voidless glass sealing and tungsten slug mounting - provides proven resilience to total ionizing dose (TID) in space and nuclear environments.
What package type does 1N6313US/TR use, and how is polarity marked?
The 1N6313US/TR uses a B-SQ MELF (cylindrical surface-mount) package with a cathode band marking on one end cap. The anode and cathode terminals are symmetric axial leads - polarity is identified solely by the painted band, consistent with JEDEC-standard MELF diode orientation.
1N6313US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 3.6 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 25 Ohms
- Current - Reverse Leakage @ Vr:
- 3 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
1N6313US/TR FAQ
1.How can I place an order for 1N6313US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6313US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6313US/TR reliable?
The price and inventory of 1N6313US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6313US/TR is usually 5 days.
3.What payment methods are accepted for 1N6313US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6313US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6313US/TR?
1N6313US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6313US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6313US/TR?
For technical support, including 1N6313US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6313US/TR requirements.
6.How does Aetrix verify that 1N6313US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6313US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6313US/TR meets industry standards.
7.What is the process for return or replacement of 1N6313US/TR?
All 1N6313US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6313US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6313US/TR part is unused and in its original packaging.
Return procedure for 1N6313US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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