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Microchip Technology 1N6314US/TR
- Part No.:
- 1N6314US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N6314US/TR.pdf
- Description:
- DIODE ZENER 3.9V 500MW SQ-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:7
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Product details
Overview
1N6314US/TR from Microsemi is a military-qualified, hermetically sealed glass Zener diode with nominal 3.9 V regulation at 20 mA, ±5% tolerance, 0.5 W power rating, and voidless MELF (B-SQ) package. It delivers stable voltage reference in high-reliability aerospace, defense, and downhole instrumentation where failure is unacceptable.
For engineers reviewing the 1N6314US/TR datasheet, 1N6314US/TR pinout, 1N6314US/TR application, or 1N6314US/TR equivalent, key selection criteria include its MIL-PRF-19500/533 qualification (JAN/JANTXV levels), -65°C to +175°C operating range, low dynamic impedance (23 Ω @ 20 mA), and radiation-hardened construction per MicroNote 050.
Technical Context
This device operates as a precision shunt voltage regulator in reverse breakdown mode, maintaining 3.9 V across its terminals over a broad current range (250 µA to 108 mA). Its internal metallurgical bond (Category I per MIL-PRF-19500/533) ensures mechanical robustness and long-term stability under thermal cycling and vibration stress.
The 1N6314US/TR exhibits a negative temperature coefficient of -0.060 %/°C, enabling predictable drift compensation in temperature-critical references. Its 21 °C/W junction-to-end-cap thermal resistance supports reliable power dissipation up to 0.5 W at TEC = 150 °C, with derating required above that temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.9 V nominal at 20 mA test current - defines primary regulation point for reference design |
| Power Dissipation (PD) | 0.5 W at TEC = 150 °C - sets maximum continuous DC power handling without derating |
| Dynamic Impedance (ZZT) | 23 Ω at 20 mA - determines output voltage variation under load current changes |
| Max Regulator Current (IZM) | 108 mA - maximum safe DC current before exceeding PD limit at rated TEC |
| Junction Temp Range | -65°C to +175°C - enables operation in extreme environments including space and oilfield tools |
| Temp Coefficient (αVZ) | -0.060 %/°C - quantifies voltage drift with temperature for accuracy budgeting |
| Reverse Leakage (IR) | 2 µA max at 1.0 V - ensures minimal parasitic current in high-impedance bias networks |
Pinout & Package
Hermetically sealed voidless glass MELF (B-SQ) package with copper end caps and cathode band marking. Dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side reference node | Connected to circuit ground or lowest potential node in shunt regulator configuration |
| Cathode | Zener breakdown terminal / regulated output node | Provides stable 3.9 V referenced to anode; marked by visible band on glass body |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/533 qualification | Available in JAN, JANTX, JANTXV, and JANS reliability levels - meets stringent screening and lot traceability for flight-critical systems |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - ensures >20-year parametric stability in sealed enclosures |
| Category I metallurgical bond | Internal tungsten-copper bond structure - withstands 100,000+ thermal cycles (-65°C/+175°C) without parameter shift |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per MicroNote 050 - suitable for low-earth orbit and nuclear instrumentation |
| ESD immunity | Non-sensitive per MIL-STD-750 Method 1020 - survives >4 kV HBM without degradation, simplifying handling |
Applications
| Aerospace Power Monitoring | Downhole Drilling Sensors |
|---|---|
Use Scenario: Voltage reference for analog front-end ADCs in satellite power management units exposed to thermal vacuum and radiation. IC Role / Device Role / Timing Role: Shunt voltage reference providing stable 3.9 V bias for precision op-amps and comparators. Use Value: Maintains ±0.5% regulation over -65°C to +125°C and 10 krad(Si) TID, ensuring data integrity across mission lifetime. |
Use Scenario: Reference source in high-temperature pressure transducers deployed at 175°C bottom-hole environments. IC Role / Device Role / Timing Role: Primary Zener reference in Wheatstone bridge excitation circuitry. Use Value: Stable 3.9 V output with -0.060 %/°C TC enables <±2 mV drift over full temperature range, meeting API RP17N accuracy requirements. |
| Military Radio RF Biasing | Nuclear Instrumentation |
Use Scenario: Bias voltage generation for GaAs FET amplifiers in secure HF/VHF transceivers subjected to shock and humidity. IC Role / Device Role / Timing Role: Low-noise shunt regulator supplying gate bias to RF power stages. Use Value: 1 µV/√Hz noise density at 250 µA and hermetic seal prevent signal degradation and corrosion-induced failure. |
Use Scenario: Reference element in gamma spectroscopy pulse-height analyzers operating in high-radiation containment zones. IC Role / Device Role / Timing Role: Radiation-hardened voltage standard for calibration DACs and threshold comparators. Use Value: No parametric shift after 50 krad(Si) exposure per MicroNote 050 - eliminates recalibration during reactor maintenance cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5226B | 3.3 V nominal, 0.5 W, DO-35 package, commercial-grade only, no MIL qualification | Lacks hermetic seal, radiation hardness, and extended temperature range - limited to benign industrial environments | Select when cost sensitivity outweighs reliability requirements and MIL-PRF-19500 compliance is not mandated. |
| CMZ5335B | 3.9 V nominal, 5 W, DO-214AC package, automotive AEC-Q200 qualified, ±5% tolerance | Higher power, surface-mount, non-hermetic - suited for automotive ECU power rails but not space-grade reference circuits | Choose for high-current shunt regulation in engine control modules where thermal mass and PCB footprint are prioritized over hermeticity. |
Compared with 1N6314US/TR, the 1N5226B offers lower cost but sacrifices military reliability and radiation tolerance, while the CMZ5335B provides higher power and automotive qualification at the expense of hermetic sealing and ultra-wide temperature capability.
Availability
1N6314US/TR is available at Aetrix Electronics and suitable for aerospace avionics, downhole instrumentation, military radio subsystems, and nuclear monitoring equipment requiring stable component supply across extended product lifecycles.
Supply support for 1N6314US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) specialized in high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets.
The 1N6314US/TR belongs to Microsemi's legacy MIL-qualified Zener diode family, engineered specifically for voltage reference stability in mission-critical systems where parametric drift, radiation effects, and thermal extremes must be rigorously controlled.
FAQ
What is the Zener voltage tolerance of the 1N6314US/TR?
The 1N6314US/TR has a nominal Zener voltage of 3.9 V with a standard tolerance of ±5%, as confirmed in the Electrical Characteristics table on page 3 of T4-LDS-0193-1 Rev. 1. Tighter tolerances (±1% and ±2%) are available under different part number suffixes (e.g., D or C), but the /TR variant corresponds to the standard ±5% grade. This tolerance directly impacts reference accuracy in precision analog circuits using the 1N6314US/TR.
Is the 1N6314US/TR RoHS compliant?
The 1N6314US/TR is not RoHS compliant, as indicated by the absence of the "e3" suffix in its nomenclature and explicit documentation stating RoHS versions are available "commercial grade only." The 1N6314US/TR is a military-grade part with Sn/Pb finish on copper end caps, consistent with MIL-PRF-19500/533 requirements. For RoHS-compliant alternatives, consult Microchip's commercial-grade derivatives of the same series.
What does the "US" suffix mean in 1N6314US/TR?
The "US" suffix in 1N6314US/TR denotes the MELF (B-SQ) surface-mount package with voidless hermetic glass construction, distinguishing it from axial-leaded DO-35 variants (e.g., 1N6314). The "TR" indicates tape-and-reel packaging per EIA-481-B. This packaging format ensures automated placement compatibility and preserves the hermetic seal integrity during SMT assembly - a critical requirement for the 1N6314US/TR's target high-reliability applications.
What is the maximum reverse leakage current for the 1N6314US/TR at 150°C?
The maximum reverse leakage current (IR2) for the 1N6314US/TR at 150°C is 12 µA, as specified in the Electrical Characteristics table under "Max. Reverse Current IR2 @ VR." This value is measured at the working peak voltage (VWM) of 1.0 V and reflects the device's ability to maintain low off-state current under elevated temperature - essential for battery-powered or low-power sensor nodes where quiescent current must be minimized.
Can the 1N6314US/TR be used in place of a 1N4730A?
No, the 1N6314US/TR is not a direct substitute for the 1N4730A. While both are 3.9 V Zeners, the 1N6314US/TR is a hermetically sealed, MIL-qualified MELF device with Category I metallurgical bonding, -65°C to +175°C operation, and radiation hardness - whereas the 1N4730A is a commercial DO-41 device rated only to +175°C junction temperature, with no military screening or radiation specifications. Substituting the 1N6314US/TR into a 1N4730A design requires layout adaptation (MELF vs. axial), thermal analysis (RθJEC = 21 °C/W vs. RθJA ~ 100 °C/W), and qualification revalidation.
1N6314US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 3.9 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 23 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
1N6314US/TR FAQ
1.How can I place an order for 1N6314US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6314US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6314US/TR reliable?
The price and inventory of 1N6314US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6314US/TR is usually 5 days.
3.What payment methods are accepted for 1N6314US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6314US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6314US/TR?
1N6314US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6314US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6314US/TR?
For technical support, including 1N6314US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6314US/TR requirements.
6.How does Aetrix verify that 1N6314US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6314US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6314US/TR meets industry standards.
7.What is the process for return or replacement of 1N6314US/TR?
All 1N6314US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6314US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6314US/TR part is unused and in its original packaging.
Return procedure for 1N6314US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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