Microchip Technology 1N6317DUS/TR
- Part No.:
- 1N6317DUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N6317DUS/TR.pdf
- Description:
- DIODE ZENER 5.1V 500MW SQ-MELF
- Quantity:
- Payment:

- Shipping:

Inventory:3,869
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6317DUS/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode in MELF (B-SQ) package, rated for 5.1 V ±1% Zener voltage at 20 mA, 0.5 W power dissipation, and operating from –65 °C to +175 °C. It serves as a precision voltage reference or regulator in high-reliability aerospace, defense, and downhole instrumentation circuits where failure tolerance is critical.
For engineers reviewing the 1N6317DUS/TR datasheet, 1N6317DUS/TR pinout, 1N6317DUS/TR application, or 1N6317DUS/TR equivalent, this part delivers verified MIL-PRF-19500/533 JANTXV-level reliability, low dynamic impedance (14 Ω @ 20 mA), tight 1% voltage tolerance, and radiation-hardened construction suitable for harsh-environment analog signal conditioning and power rail stabilization.
Technical Context
This Zener diode operates in reverse breakdown with a nominal Zener voltage of 5.1 V at IZ = 20 mA, exhibiting a dynamic impedance of 14 Ω and voltage regulation of 0.40 V (ΔVZ) between 10% and 50% of IZM. Its junction-to-end-cap thermal resistance is 35 °C/W (Category I metallurgical bond), enabling stable regulation under transient thermal loads.
The device features non-ESD-sensitive construction per MIL-STD-750 Method 1020, inherent radiation hardness per MicroNote 050, and RoHS-compliant tin finish on copper end caps (commercial grade only). It is not a surface-mount IC but a discrete two-terminal passive regulator requiring no bias circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 5.1 V ±1% at IZ = 20 mA - enables precise 5 V rail clamping or reference generation with minimal calibration drift. |
| Power Dissipation (PD) | 0.5 W @ TEC = 150 °C - supports continuous regulation in compact, thermally constrained layouts without forced cooling. |
| Dynamic Impedance (ZZT) | 14 Ω @ 20 mA - ensures low output impedance for stable voltage under varying load current, critical for analog sensor excitation. |
| Max Reverse Current (IR) | 5 µA @ VR = 3.3 V - guarantees negligible leakage in standby mode, preserving battery life in low-power systems. |
| Junction Temperature Range | –65 °C to +175 °C - validated for operation in extreme environments including jet engine bays and oil-well logging tools. |
| Thermal Resistance (RθJEC) | 35 °C/W - allows direct thermal coupling to metal chassis or heat-spreading PCB pads for predictable derating. |
| Forward Voltage (VF) | 1.4 V @ 1.0 A - defines forward conduction behavior during fault conditions or bidirectional protection configurations. |
Pinout & Package
Hermetically sealed voidless glass MELF (B-SQ) package with copper end caps, tin/lead or RoHS matte tin finish, cathode indicated by band. Weight: 0.0945 g. Dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side connection | Connected to ground or lower potential node; carries full forward current during fault events. |
| Cathode | Zener breakdown terminal / regulated output node | Marked with band; provides stable 5.1 V reference when reverse-biased above VZ with current ≥ IZK. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/533 qualification | JANTXV-level screening ensures zero-defect reliability for mission-critical avionics and satellite subsystems. |
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration, preventing parametric shift over 20+ years in sealed enclosures. |
| Category I metallurgical bond | Validated interfacial integrity for 1N6317US-series devices, supporting shock/vibration survival in launch and flight environments. |
| 1% Zener voltage tolerance | Reduces need for post-assembly trimming in precision reference designs, lowering test time and BOM count. |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID) per MicroNote 050, enabling use in LEO spacecraft without shielding overhead. |
Applications
| Aerospace Power Monitoring | Downhole Instrumentation Reference |
|---|---|
Use Scenario: Voltage supervision of 28 V DC bus in UAV flight control modules under wide temperature swings and EMI exposure. IC Role / Device Role / Timing Role: Zener regulator providing stable 5.1 V reference for ADC biasing and comparator thresholds. Use Value: Maintains <±0.5% reference accuracy across –55 °C to +125 °C ambient, ensuring consistent fault detection thresholds without recalibration. |
Use Scenario: Precision voltage reference in high-temperature pressure transducers deployed at 175 °C in oil/gas wellbores. IC Role / Device Role / Timing Role: Primary Zener reference for bridge amplifier excitation and ratiometric sensor scaling. Use Value: Delivers 5.1 V ±1% stability at 150 °C junction temperature, eliminating need for active temperature compensation circuitry. |
| Defense Radar Bias Supply | Satellite Payload Voltage Clamp |
Use Scenario: Overvoltage protection and bias stabilization for GaN RF amplifier gate drivers in ground-based radar front-ends. IC Role / Device Role / Timing Role: Shunt regulator clamping transient spikes while maintaining steady 5.1 V gate bias under pulsed RF load. Use Value: Withstands 2.0 A surge current (8.3 ms square wave) and exhibits <14 Ω dynamic impedance, minimizing gate voltage droop during fast transients. |
Use Scenario: Radiation-tolerant voltage clamp on 5 V data bus lines in LEO microsatellites exposed to proton flux. IC Role / Device Role / Timing Role: Passive overvoltage limiter protecting FPGA I/O banks from ESD and single-event transients. Use Value: Inherent radiation hardness eliminates need for redundant clamping devices, reducing mass and board area in SWaP-constrained payloads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6317US/TR | Same 5.1 V nominal Zener voltage but ±5% tolerance instead of ±1%; identical package, thermal specs, and MIL qualification level. | Acceptable where system-level calibration compensates for initial voltage variation; lower cost for non-critical references. | Select 1N6317US/TR when absolute voltage accuracy is relaxed and budget constraints dominate. |
| SMF5.0A | Surface-mount SOD-123 package; 5.0 V nominal, ±5% tolerance; 1.0 W PD; no MIL qualification or radiation hardness. | Limited to commercial-grade industrial controls; unsuitable for aerospace, defense, or high-TJ applications. | Choose SMF5.0A only for cost-sensitive, non-mission-critical consumer or automotive ECUs with standard reflow assembly. |
Compared with 1N6317US/TR and SMF5.0A, the 1N6317DUS/TR uniquely combines JANTXV reliability, 1% tolerance, and radiation hardness-making it irreplaceable in space-qualified or safety-critical voltage reference roles where long-term parametric stability is non-negotiable.
Availability
1N6317DUS/TR is available at Aetrix Electronics and suitable for aerospace power monitoring, downhole instrumentation reference, defense radar bias supply, and satellite payload voltage clamp applications requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 1N6317DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified components for aerospace, defense, and industrial markets.
The 1N6309US–1N6355DUS series was designed specifically to replace legacy axial-leaded Zeners with surface-mount MELF equivalents while meeting MIL-PRF-19500/533 requirements for extreme environment operation.
FAQ
What is the Zener voltage tolerance of the 1N6317DUS/TR?
The 1N6317DUS/TR has a Zener voltage tolerance of ±1% at 20 mA test current, corresponding to a nominal 5.1 V rating ranging from 5.049 V to 5.151 V. This tight tolerance is achieved via post-process screening and is specified in the part nomenclature by the "D" suffix. The 1N6317DUS/TR maintains this accuracy across its full operating temperature range when used within derated power limits.
Is the 1N6317DUS/TR qualified to MIL-PRF-19500/533?
Yes, the 1N6317DUS/TR is qualified to MIL-PRF-19500/533 at the JANTXV reliability level, including full screening for burn-in, temperature cycling, and hermeticity. This qualification is documented in Microsemi's T4-LDS-0193-1 datasheet and applies specifically to the "DUS" variant. The 1N6317DUS/TR is not a commercial-only part-it carries full military traceability and lot-level certification.
What is the maximum surge current rating for the 1N6317DUS/TR?
The 1N6317DUS/TR is rated for a non-repetitive peak Zener surge current (IZSM) of 2.0 A for an 8.3 ms square wave pulse, as specified in the Electrical Characteristics table on page 3 of the datasheet. This rating assumes proper thermal management and is validated for single-event overvoltage suppression in defense and aerospace power systems where transient energy must be safely absorbed without parametric shift.
Does the 1N6317DUS/TR have radiation hardness documentation?
Yes, the 1N6317DUS/TR exhibits inherent radiation hardness as described in Microsemi MicroNote 050, which documents total ionizing dose (TID) survivability for this family of voidless-glass Zeners. While not individually tested per MIL-STD-883 method 1019, the 1N6317DUS/TR's construction and material system provide proven resilience in LEO and MEO orbital environments without additional shielding or redundancy.
What is the thermal resistance junction-to-end-cap for the 1N6317DUS/TR?
The 1N6317DUS/TR has a thermal resistance junction-to-end-cap (RθJEC) of 35 °C/W, as confirmed in the Maximum Ratings table on page 1 of the datasheet. This value applies to the 1N6309US–1N6320US group (Category I bond), and enables accurate thermal modeling when the end cap is mounted to a heatsink or metal chassis. Derating follows Figure 1 in the datasheet.
1N6317DUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 5.1 V
- Tolerance:
- ±1%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 14 Ohms
- Current - Reverse Leakage @ Vr:
- 5 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
1N6317DUS/TR FAQ
1.How can I place an order for 1N6317DUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6317DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6317DUS/TR reliable?
The price and inventory of 1N6317DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6317DUS/TR is usually 5 days.
3.What payment methods are accepted for 1N6317DUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6317DUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6317DUS/TR?
1N6317DUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6317DUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6317DUS/TR?
For technical support, including 1N6317DUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6317DUS/TR requirements.
6.How does Aetrix verify that 1N6317DUS/TR is sourced from the original manufacturer or authorized distributors?
All 1N6317DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6317DUS/TR meets industry standards.
7.What is the process for return or replacement of 1N6317DUS/TR?
All 1N6317DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6317DUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6317DUS/TR part is unused and in its original packaging.
Return procedure for 1N6317DUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6317DUS/TR Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

