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Microchip Technology 1N6319US
- Part No.:
- 1N6319US
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N6319US.pdf
- Description:
- DIODE ZENER 6.2V 500MW SQ-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:3,271
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Product details
Overview
1N6319US from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode in B-SQ MELF package, rated for 0.5 W steady-state power dissipation at 150 °C end-cap temperature, with nominal Zener voltage 6.2 V ±5%, dynamic impedance 3 Ω at 20 mA, and maximum surge current 3.5 A (8.3 ms square wave). It serves as a precision voltage reference or regulator in high-reliability analog power supply monitoring circuits.
For engineers reviewing the 1N6319US datasheet, 1N6319US pinout, 1N6319US application, or 1N6319US equivalent, this page delivers verified electrical characteristics, MIL-PRF-19500/533 qualification level (JAN/JANTXV), thermal resistance (RθJEC = 35 °C/W), reverse leakage (IR ≤ 5 µA at VR = 5.2 V), and radiation-hardened construction per MicroNote 050.
Technical Context
This device operates in reverse breakdown to maintain stable voltage across wide current (250 µA to 68 mA) and temperature (−65 °C to +175 °C) ranges. Its voidless glass encapsulation and internal Category I metallurgical bond ensure long-term stability under thermal cycling and mechanical stress.
The 1N6319US exhibits low dynamic impedance (3 Ω @ 20 mA) and tight voltage regulation (ΔVZ = 0.30 V between 10%–50% IZM), enabling accurate reference performance in low-noise analog subsystems. Its −65 °C to +175 °C junction/storage temperature range supports operation in aerospace and downhole industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 6.2 V ±5% @ 20 mA - defines nominal regulation point for power rail stabilization |
| Dynamic Impedance (ZZT) | 3 Ω @ 20 mA - ensures minimal output voltage variation under load transients |
| Max Power Dissipation (PD) | 0.5 W @ TEC = 150 °C - sets thermal design limit for PCB copper area and heatsinking |
| Reverse Leakage (IR) | ≤5 µA @ VR = 5.2 V - guarantees low standby current in battery-backed reference circuits |
| Temp Coefficient (αVZ) | +0.060 %/°C - enables predictable drift compensation in temperature-critical references |
| Surge Current (IZSM) | 3.5 A (8.3 ms square wave) - withstands short-duration overvoltage events without degradation |
| Junction Temp Range | −65 °C to +175 °C - supports operation in extreme environmental conditions including space and oilfield electronics |
Pinout & Package
Hermetically sealed B-SQ MELF (glass cylindrical) package with axial polarity marking: cathode indicated by black band. End caps are copper with Sn/Pb or RoHS-compliant matte tin finish. Weight: 0.0945 g. Dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side reference node | Connected to ground or lower-potential rail during Zener operation; carries full regulator current in reverse bias |
| Cathode | Zener breakdown terminal / regulated output node | Banded end; supplies stable 6.2 V reference when reverse-biased above VZ; requires current-limiting resistor |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and long-term parameter drift in humid or corrosive environments |
| Category I internal metallurgical bond | Ensures mechanical integrity and thermal cycle reliability up to 1000 cycles between −65 °C and +175 °C |
| MIL-PRF-19500/533 qualification | Validated for JAN/JANTXV reliability levels - includes screening for burn-in, temperature cycling, and hermeticity |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050 - suitable for space-grade applications |
| ESD immunity | Non-sensitive per MIL-STD-750 Method 1020 - eliminates need for external ESD protection in handling and assembly |
Applications
| Aerospace Power Monitoring | Downhole Instrumentation Reference |
|---|---|
Use Scenario: Voltage supervision of 28 V DC bus in satellite power distribution units. IC Role / Device Role / Timing Role: Precision Zener reference for comparator-based undervoltage lockout circuit. Use Value: Stable 6.2 V threshold with <0.3 V regulation error across −55 °C to +125 °C ensures reliable fault detection without calibration drift. |
Use Scenario: Biasing and reference generation in high-temperature logging tools deployed at 175 °C wellbore environments. IC Role / Device Role / Timing Role: Primary voltage reference for ADC front-end and sensor excitation circuitry. Use Value: Guaranteed operation to +175 °C junction temperature and radiation tolerance enable uninterrupted data acquisition in nuclear and geothermal settings. |
| Military Avionics Regulators | Industrial Control System Protection |
Use Scenario: Overvoltage clamp and reference in MIL-STD-704 compliant 270 V DC aircraft power interface. IC Role / Device Role / Timing Role: Zener shunt regulator protecting downstream FPGAs and microcontrollers from transient surges. Use Value: 3.5 A surge rating (8.3 ms) and 0.5 W steady-state dissipation provide robust clamping without thermal runaway. |
Use Scenario: Voltage reference for isolated analog input modules in programmable logic controllers operating in factory automation cabinets. IC Role / Device Role / Timing Role: Stable 6.2 V reference for 16-bit DAC calibration and sensor signal conditioning. Use Value: Low 3 Ω dynamic impedance and +0.060 %/°C tempco minimize gain error across 0–60 °C ambient range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6319 | Same electrical specs but DO-35 axial-leaded package; no MIL-PRF-19500 qualification; commercial grade only | Lacks hermetic seal and military screening; unsuitable for high-reliability or extended temperature use | Select 1N6319US when board space, thermal performance, and mission-critical reliability outweigh cost sensitivity. |
| SMF6.2A | Surface-mount SOD-123 package; 6.2 V ±5%; 1 W PD; higher RθJA (350 °C/W); no MIL qualification or radiation hardening | Higher power rating but inferior thermal resistance and no high-reliability screening | Choose SMF6.2A only for cost-driven commercial designs where 0.5 W rating and radiation tolerance are not required. |
Compared with 1N6319 and SMF6.2A, the 1N6319US uniquely combines MIL-PRF-19500 qualification, voidless hermetic packaging, Category I metallurgical bonding, and radiation hardness - making it irreplaceable in aerospace, defense, and nuclear instrumentation where failure is not an option.
Availability
1N6319US is available at Aetrix Electronics and suitable for aerospace power monitoring, downhole instrumentation reference, and military avionics regulators requiring stable component supply, long-term obsolescence management, and traceable sourcing.
Supply support for 1N6319US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified analog and mixed-signal components.
The 1N6319US belongs to Microsemi's legacy MIL-PRF-19500/533 qualified Zener diode family, designed specifically for voltage regulation and reference applications in mission-critical systems where parametric stability, hermetic integrity, and environmental survivability are mandatory.
FAQ
What is the Zener voltage tolerance and test current for the 1N6319US?
The 1N6319US has a nominal Zener voltage of 6.2 V with a standard tolerance of ±5%, measured at a test current (IZ2) of 20 mA. This tolerance is confirmed in the Electrical Characteristics table on page 3 of the official datasheet T4-LDS-0193-1 Rev. 1. Tighter tolerances (±1% or ±2%) are available under different part number suffixes, but the 1N6319US specifically uses the base 5% variant.
Is the 1N6319US suitable for high-temperature environments like downhole drilling tools?
Yes, the 1N6319US is explicitly rated for junction and storage temperatures from −65 °C to +175 °C, and its voidless hermetic glass construction ensures stability under thermal shock and prolonged high-temperature exposure. The 1N6319US is routinely deployed in downhole instrumentation where sustained operation above 150 °C is required, and its Category I metallurgical bond supports reliability across repeated thermal cycles.
Does the 1N6319US meet MIL-PRF-19500/533 requirements, and what qualification levels are offered?
Yes, the 1N6319US is qualified per MIL-PRF-19500/533 and available in JAN, JANTX, and JANTXV reliability levels. These levels include rigorous screening such as burn-in, temperature cycling, and hermeticity testing. The 1N6319US falls within the 1N6321US–1N6355US group that uses Category I internal metallurgical bonds, confirming its suitability for high-integrity military and aerospace applications.
What is the thermal resistance from junction to end cap (RθJEC) for the 1N6319US?
The 1N6319US has a thermal resistance of 35 °C/W from junction to end cap (RθJEC), as specified in the Maximum Ratings table on page 1 of the datasheet. This value applies to the 1N6309US–1N6320US series, which includes the 1N6319US. It directly informs PCB pad design and thermal derating curves shown in Figure 1 of the same document.
How does the radiation hardness of the 1N6319US compare to commercial Zener diodes?
The 1N6319US is inherently radiation-hardened per Microsemi MicroNote 050, exhibiting tolerance to total ionizing dose (TID) far exceeding standard commercial Zeners. Unlike non-radiation-hardened devices that degrade rapidly under gamma or proton exposure, the 1N6319US maintains stable VZ, IR, and ZZT parameters after irradiation - a key reason it is selected for satellite power systems and nuclear facility instrumentation where the 1N6319US must operate reliably in high-radiation zones.
1N6319US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 6.2 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 3 Ohms
- Current - Reverse Leakage @ Vr:
- 5 µA @ 3.5 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
1N6319US FAQ
1.How can I place an order for 1N6319US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6319US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6319US reliable?
The price and inventory of 1N6319US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6319US is usually 5 days.
3.What payment methods are accepted for 1N6319US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6319US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6319US?
1N6319US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6319US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6319US?
For technical support, including 1N6319US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6319US requirements.
6.How does Aetrix verify that 1N6319US is sourced from the original manufacturer or authorized distributors?
All 1N6319US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6319US meets industry standards.
7.What is the process for return or replacement of 1N6319US?
All 1N6319US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6319US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6319US part is unused and in its original packaging.
Return procedure for 1N6319US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6319US Tags
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