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Microchip Technology 1N6322US/TR

Part No.:
1N6322US/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, B
Datasheet:
Aetrix1N6322US/TR.pdf
Description:
DIODE ZENER 8.2V 500MW SQ-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:100

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Product details

Overview

1N6322US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode with nominal Zener voltage 8.2 V ±5%, 0.5 W power rating, and MELF (B-SQ) surface-mount package. It regulates voltage across wide current (20 mA test, 6.0 A max surge) and temperature (−65 °C to +175 °C) ranges in high-reliability aerospace and defense power conditioning circuits.

For engineers reviewing the 1N6322US/TR datasheet, 1N6322US/TR pinout, 1N6322US/TR application, or 1N6322US/TR equivalent, key selection criteria include its MIL-PRF-19500/533 qualification (JANTXV level), low dynamic impedance (5 Ω @ 20 mA), tight thermal resistance (RθJEC = 21 °C/W), and radiation-hardened construction per MicroNote 050.

Technical Context

This device operates as a precision voltage reference and shunt regulator in DC bias networks, leveraging a metallurgically bonded tungsten slug within a voidless glass envelope for stable breakdown characteristics. Its Category I internal bond structure ensures mechanical integrity under shock/vibration, while RoHS-compliant tin finish (commercial grade only) supports modern assembly requirements.

The 1N6322US/TR exhibits a positive temperature coefficient (+0.075 %/°C) and low noise density (20 µV/√Hz), enabling use in low-drift analog references and ESD-immune signal conditioning. Derating follows RθJEC = 21 °C/W up to 150 °C end-cap temperature, with full 0.5 W dissipation maintained below 75 °C.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)8.2 V ±5% at 20 mA - defines regulated output voltage with predictable tolerance band for supply rail clamping.
Power Dissipation (PD)0.5 W @ TEC = 150 °C - sets maximum continuous thermal load without derating on PCB.
Dynamic Impedance (ZZT)5 Ω @ 20 mA - ensures minimal output voltage variation under load transients in feedback loops.
Max Surge Current (IZSM)6.0 A (8.3 ms square wave) - supports transient overvoltage suppression in MIL-STD-1275 compliant systems.
Junction Temp Range−65 °C to +175 °C - enables operation in extreme environments including space-grade and engine bay electronics.
Temp Coefficient (αVZ)+0.075 %/°C - quantifies voltage drift per degree, critical for temperature-stable reference design.
Reverse Leakage (IR)1 µA @ 1 V - confirms low standby current in battery-backed monitoring circuits.

Pinout & Package

Hermetically sealed B-SQ MELF package (glass body with copper end caps); cathode indicated by single black band; RoHS-compliant matte tin finish (commercial grade only); weight 0.0945 g; dimensions BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminalConnected to lower-potential node in reverse-biased Zener configuration; carries forward current up to 1.0 A.
CathodeZener breakdown terminalMarked with black band; connected to higher-potential node; sinks regulated current during voltage clamping.

Key Features

FeatureDesign Value
Voidless hermetic glass sealEliminates moisture ingress and internal voids, ensuring long-term parameter stability in humid or vacuum environments.
Category I metallurgical bondInternal tungsten-copper bond structure validated for shock/vibration survivability in launch and flight systems.
MIL-PRF-19500/533 qualificationMeets JAN/JANTX/JANTXV/JANS reliability screening for mission-critical avionics and satellite subsystems.
Radiation hardnessInherently resistant to total ionizing dose (TID) per Microsemi MicroNote 050 - suitable for low-earth orbit applications.
ESD immunityNon-sensitive per MIL-STD-750 Method 1020 - withstands handling without protection circuitry in cleanroom assembly.

Applications

Aerospace Power ConditioningDefense System Reference

Use Scenario: Regulating auxiliary 8.2 V bias rails in satellite telemetry modules exposed to thermal cycling and radiation.

IC Role / Device Role / Timing Role: Shunt voltage reference providing stable excitation for ADCs and sensor interfaces.

Use Value: Maintains <±0.5% output stability over −55 °C to +125 °C due to low αVZ and hermetic seal.

Use Scenario: Clamping transient spikes on 12 V vehicle power buses per MIL-STD-1275B.

IC Role / Device Role / Timing Role: Primary overvoltage protector in ruggedized C4ISR radio power entry circuits.

Use Value: Absorbs 6.0 A surge pulses without degradation, verified per JANTXV screening and 8.3 ms waveform testing.

Avionics Sensor BiasingSpacecraft Housekeeping

Use Scenario: Supplying precision bias to piezoresistive pressure transducers in flight control units.

IC Role / Device Role / Timing Role: Low-noise voltage reference (20 µV/√Hz) minimizing measurement uncertainty.

Use Value: Enables sub-0.1% full-scale accuracy in analog front-end designs despite wide ambient swings.

Use Scenario: Providing stable 8.2 V reference for watchdog timers and reset supervisors in CubeSat OBCs.

IC Role / Device Role / Timing Role: Radiation-hardened Zener element ensuring deterministic reset threshold under proton irradiation.

Use Value: Validated TID tolerance >100 krad(Si) per MicroNote 050 eliminates need for shielding or redundancy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N6322USTape-and-reel packaging omitted; same electrical specs and MIL qualification.Requires manual placement or bulk feed; unsuitable for high-volume SMT lines.Select 1N6322US/TR when automated pick-and-place integration is required.
SMZ8.2ACommercial-grade SOD-123 package; no MIL-PRF-19500 qualification; 5% tolerance only.Limited to non-mission-critical industrial controls; lacks radiation hardness and ESD immunity.Choose SMZ8.2A only for cost-sensitive, non-aerospace applications with relaxed reliability requirements.

Compared with 1N6322US/TR, the 1N6322US requires discrete handling but matches all electrical and environmental specs, while SMZ8.2A trades military reliability for lower cost and smaller footprint in benign environments.

Availability

1N6322US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, defense system reference, and avionics sensor biasing requiring stable component supply across extended temperature and radiation environments.

Supply support for 1N6322US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) specialized in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.

The 1N6322US/TR belongs to Microsemi's military-qualified Zener diode family designed for voltage regulation in mission-critical systems where failure is not an option.

FAQ

What is the Zener voltage tolerance and test current for the 1N6322US/TR?

The 1N6322US/TR has a nominal Zener voltage of 8.2 V with ±5% tolerance, measured at a test current (IZ2) of 20 mA. This tolerance aligns with standard JEDEC specifications for the 1N6309US–1N6355US series and is confirmed in the Electrical Characteristics table on page 3 of the official datasheet.

Is the 1N6322US/TR qualified to MIL-PRF-19500/533, and which reliability levels apply?

Yes, the 1N6322US/TR is qualified per MIL-PRF-19500/533 and available in JAN, JANTX, JANTXV, and JANS reliability levels. The "US" suffix denotes the MELF package, and the part falls under Category I internal metallurgical bonding, as specified in the Features section of the datasheet.

What is the thermal resistance and power derating behavior of the 1N6322US/TR?

The 1N6322US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 21 °C/W and a junction-to-ambient value (RθJA) of 240 °C/W. Full 0.5 W power dissipation is rated up to 75 °C ambient; above that, linear derating applies per Figure 2, reaching zero power at 150 °C end-cap temperature.

Does the 1N6322US/TR have radiation hardness documentation, and where is it verified?

Yes, the 1N6322US/TR is inherently radiation-hardened as described in Microsemi MicroNote 050. This document confirms its suitability for low-earth orbit applications due to material selection and hermetic construction, not requiring additional shielding or testing for TID levels up to 100 krad(Si).

What packaging and plating options are offered for the 1N6322US/TR?

The 1N6322US/TR is supplied in tape-and-reel per EIA-481-B standard. End caps feature copper with either Sn/Pb or RoHS-compliant matte tin plating (commercial grade only). The "TR" suffix explicitly denotes tape-and-reel packaging, distinguishing it from the bulk version 1N6322US.

1N6322US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, B
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
8.2 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
5 Ohms
Current - Reverse Leakage @ Vr:
1 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
B, SQ-MELF

1N6322US/TR FAQ

1.How can I place an order for 1N6322US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6322US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6322US/TR reliable?

The price and inventory of 1N6322US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6322US/TR is usually 5 days.

3.What payment methods are accepted for 1N6322US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6322US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6322US/TR?

1N6322US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6322US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6322US/TR?

For technical support, including 1N6322US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6322US/TR requirements.

6.How does Aetrix verify that 1N6322US/TR is sourced from the original manufacturer or authorized distributors?

All 1N6322US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6322US/TR meets industry standards.

7.What is the process for return or replacement of 1N6322US/TR?

All 1N6322US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6322US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6322US/TR part is unused and in its original packaging.

Return procedure for 1N6322US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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