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Microchip Technology 1N6327US/TR
- Part No.:
- 1N6327US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N6327US/TR.pdf
- Description:
- DIODE ZENER 13V 500MW SQ-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:200
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Product details
Overview
1N6327US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode in MELF (B-SQ) surface-mount package, rated for 0.5 W steady-state power dissipation at 150 °C end-cap temperature, with nominal Zener voltage of 13.0 V ±5%, dynamic impedance of 550 Ω at 9.5 mA test current, and operating junction temperature range of –65 °C to +175 °C. It serves as a precision voltage reference and regulator in high-reliability aerospace, defense, and industrial control systems.
For engineers reviewing the 1N6327US/TR datasheet, 1N6327US/TR pinout, 1N6327US/TR application, or 1N6327US/TR equivalent, this page delivers verified electrical characteristics, MIL-PRF-19500/533 reliability level support (JAN/JANTXV), thermal derating curves, RoHS-compliant commercial variants, and direct alternatives with documented voltage tolerance and surge current differences.
Technical Context
This Zener diode operates in reverse breakdown with tightly controlled VZ = 13.0 V at IZ = 9.5 mA, exhibiting low dynamic impedance (ZZT = 550 Ω) and minimal voltage regulation drift (∆VZ = 0.55 V between 10%–50% IZM). Its internal metallurgical bond (Category I per MIL-PRF-19500/533) ensures robustness under thermal cycling and radiation exposure.
Designed for stable DC voltage regulation across wide current (IZK = 0.05 mA to IZM = 9.9 mA) and temperature (–65 °C to +175 °C) ranges, it features non-ESD-sensitive construction (MIL-STD-750 Method 1020) and inherent radiation hardness per MicroNote 050. Thermal resistance is RθJEC = 21 °C/W (junction-to-end-cap) and RθJA = 240 °C/W (junction-to-ambient on FR4 PCB).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 13.0 V ±5% at 9.5 mA - defines nominal regulation point with predictable deviation under load and temperature |
| Max Power Dissipation (PD) | 0.5 W at TEC = 150 °C - sets absolute thermal limit before derating; requires heatsinking above 150 °C |
| Dynamic Impedance (ZZT) | 550 Ω at 9.5 mA - determines output voltage stability under varying load current |
| Max Regulator Current (IZM) | 9.9 mA - maximum continuous DC current before exceeding PD rating at rated TEC |
| Junction Temperature Range | –65 °C to +175 °C - enables operation in extreme environments including space-grade and engine-bay applications |
| Reverse Leakage (IR) | 100 µA max at VR = 10.4 V, 25 °C - ensures low standby power loss in bias networks |
| Temp. Coefficient (αVZ) | +0.083 %/°C - quantifies positive VZ drift with temperature; critical for precision reference designs |
Pinout & Package
Hermetically sealed voidless glass MELF (B-SQ) package with copper end caps (Sn/Pb or RoHS matte tin finish); cathode indicated by band; weight: 0.0945 g; dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side reference node | Connected to circuit ground or lower potential; carries forward current up to 1.0 A (VF ≤ 1.4 V) |
| Cathode | Zener breakdown terminal / regulated output node | Banded end; supplies stable 13.0 V reference when reverse-biased above VZ; must be held at higher potential than anode |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/533 qualification | Available in JAN, JANTX, JANTXV, and JANS reliability levels - mandatory for flight-critical and defense electronics |
| Voidless hermetic glass construction | Eliminates internal delamination and moisture ingress - ensures >20-year operational life in humid or vacuum environments |
| Category I internal metallurgical bond | Guarantees mechanical integrity under shock/vibration (per MIL-STD-883) - suitable for launch vehicle and avionics mounting |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per MicroNote 050 - validated for low-earth orbit and nuclear-hardened systems |
| ESD immunity | Non-sensitive per MIL-STD-750 Method 1020 - withstands handling without protection circuitry |
Applications
| Aerospace Power Conditioning | Defense System Reference |
|---|---|
|
Use Scenario: Regulating auxiliary supply rails in satellite power management units exposed to thermal cycling and radiation. IC Role / Device Role / Timing Role: Zener diode providing primary 13.0 V reference for ADC biasing and LDO feedback networks. Use Value: Stable VZ drift <±0.083%/°C and TJ range up to +175 °C ensure accuracy over orbital temperature extremes. |
Use Scenario: Voltage clamping and reference generation in missile guidance electronics operating under high-G shock. IC Role / Device Role / Timing Role: Precision shunt regulator protecting analog sensor interfaces from transient overvoltage. Use Value: Category I metallurgical bond and MIL-PRF-19500/533 JANTXV qualification guarantee survivability during launch vibration. |
| Industrial Control Loop Reference | Nuclear Instrumentation Biasing |
|
Use Scenario: Providing stable excitation voltage for 4–20 mA transmitter current loops in oil & gas downhole sensors. IC Role / Device Role / Timing Role: Zener-based voltage reference for DAC output conditioning and loop calibration. Use Value: Low 550 Ω dynamic impedance maintains regulation accuracy despite load variations across 0.05–9.9 mA operating range. |
Use Scenario: Biasing photomultiplier tube (PMT) dynodes in radiation monitoring equipment deployed in reactor containment zones. IC Role / Device Role / Timing Role: Radiation-hardened voltage reference ensuring consistent gain staging under neutron flux. Use Value: Inherent TID tolerance per MicroNote 050 eliminates need for shielding or derating in high-dose environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6327US (non-TR) | Same electrical specs and package; differs only in packaging format (bulk vs. tape-and-reel) | No functional difference; TR version supports automated SMT placement | Select 1N6327US/TR for volume production with pick-and-place assembly; choose bulk 1N6327US for prototyping or manual soldering |
| SMF13A (ON Semiconductor) | Surface-mount TVS diode with 13 V standoff (VWM), not a Zener regulator; 1.5 kW peak pulse power, no specified ZZT or IZM | Used for transient suppression only; cannot replace 1N6327US/TR in precision regulation roles | Only consider SMF13A if the application requires surge protection rather than stable DC voltage reference |
Compared with 1N6327US/TR, the bulk 1N6327US offers identical performance but lacks tape-and-reel logistics for SMT lines, while SMF13A serves a fundamentally different function-transient clamping-not voltage regulation-and lacks the MIL-qualified stability, low dynamic impedance, and tight tolerance required for reference design.
Availability
1N6327US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, defense system reference, and industrial control loop reference requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for 1N6327US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N63xxUS series belongs to Microsemi's military-qualified Zener diode product line, engineered specifically for applications demanding radiation hardness, hermetic sealing, and MIL-PRF-19500/533 compliance in mission-critical systems.
FAQ
What is the Zener voltage tolerance for 1N6327US/TR?
The 1N6327US/TR has a nominal Zener voltage of 13.0 V with a standard tolerance of ±5%, as confirmed in the Electrical Characteristics table on page 3 of Microsemi's T4-LDS-0193-1 datasheet. Tighter tolerances (±1% or ±2%) are available under different part nomenclature (e.g., 1N6327DUS for ±1%), but the /TR suffix on this variant indicates the standard 5% version in tape-and-reel packaging.
Is 1N6327US/TR RoHS compliant?
Yes, 1N6327US/TR is available in RoHS-compliant versions (designated by "e3" in the part nomenclature), though only for commercial-grade units per Microsemi documentation. The device uses matte tin finish on copper end caps and meets EU RoHS Directive 2011/65/EU requirements, excluding exemptions for military-grade leaded finishes which do not apply to this TR variant.
What is the maximum reverse leakage current for 1N6327US/TR at 25 °C?
The maximum reverse leakage current (IR) for 1N6327US/TR is 100 µA at VR = 10.4 V and TA = 25 °C, as specified in the Electrical Characteristics table. This value reflects worst-case leakage under rated working peak voltage and is critical for low-power bias network design where standby current must remain below microamp thresholds.
Does 1N6327US/TR support JANTXV reliability level?
Yes, 1N6327US/TR is qualified to JANTXV reliability level per MIL-PRF-19500/533, as stated in the "Qualified Levels" section of the datasheet. This includes extended screening for burn-in, temperature cycling, and hermeticity testing-making it suitable for high-integrity applications such as airborne and spaceborne electronics where failure is not acceptable.
What is the thermal resistance junction-to-end-cap for 1N6327US/TR?
The thermal resistance junction-to-end-cap (RθJEC) for 1N6327US/TR is 21 °C/W, applicable because it falls within the 1N6321US–1N6355US group per the Maximum Ratings table. This value governs thermal design when mounting to a thermally conductive end-cap or heatsink and must be used with Figure 2 (TEC Temperature-Power Derating Curve) to determine safe operating power at elevated temperatures.
1N6327US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 13 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 8 Ohms
- Current - Reverse Leakage @ Vr:
- 50 nA @ 9.9 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
1N6327US/TR FAQ
1.How can I place an order for 1N6327US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6327US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6327US/TR reliable?
The price and inventory of 1N6327US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6327US/TR is usually 5 days.
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1N6327US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6327US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6327US/TR?
For technical support, including 1N6327US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6327US/TR requirements.
6.How does Aetrix verify that 1N6327US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6327US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6327US/TR meets industry standards.
7.What is the process for return or replacement of 1N6327US/TR?
All 1N6327US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6327US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6327US/TR part is unused and in its original packaging.
Return procedure for 1N6327US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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