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Microchip Technology 1N6333US/TR

Part No.:
1N6333US/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, B
Datasheet:
Aetrix1N6333US/TR.pdf
Description:
DIODE ZENER 24V 500MW SQ-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:100

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Product details

Overview

1N6333US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode with nominal Zener voltage 24.0 V ±5%, 0.5 W power rating, and 24 mA test current (IZ2), designed for high-reliability voltage regulation in aerospace, defense, and radiation-hardened systems.

For engineers reviewing the 1N6333US/TR datasheet, 1N6333US/TR pinout, 1N6333US/TR application, or 1N6333US/TR equivalent, this part delivers stable breakdown performance across -65 °C to +175 °C, low dynamic impedance (18 Ω @ 24 mA), tight thermal coefficient (+0.088 %/°C), and ESD immunity per MIL-STD-750 Method 1020.

Technical Context

This Zener diode operates in reverse breakdown to maintain precise DC reference voltage under varying load and temperature conditions. Its voidless glass package with internal metallurgical bond ensures long-term stability and hermetic reliability per MIL-PRF-19500/533.

It exhibits 1.15 V voltage regulation (∆VZ) between 10% and 50% of IZM, 0.39 V maximum working peak voltage (VWM) at 18.0 V, and 100 µA max reverse leakage at 18.0 V and 150 °C - confirming suitability for critical biasing and protection circuits in harsh environments.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ)24.0 V ±5% @ 24 mA - defines stable regulation point for precision reference design
Power Dissipation (PD)0.5 W @ TEC = 150 °C - sets maximum continuous thermal load on end cap
Dynamic Impedance (ZZ)18 Ω @ 24 mA - determines output voltage variation under load transients
Junction Temperature Range-65 °C to +175 °C - enables operation in extreme aerospace/defense thermal environments
Reverse Leakage (IR2)100 µA @ 18.0 V, 150 °C - confirms low drift in high-temp bias networks
Thermal Resistance (RθJEC)21 °C/W - applies to 1N6321US–1N6355US series; governs end-cap cooling efficiency
Temp. Coefficient (αVZ)+0.088 %/°C - quantifies voltage drift vs. temperature for system-level compensation

Pinout & Package

Hermetically sealed B-SQ MELF ("D") package with copper end caps (Sn/Pb or RoHS matte tin finish); cathode indicated by band; weight 0.0945 g; dimensions BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).

Pin/Terminal Circuit Role Design Meaning
AnodeForward conduction terminal / low-side reference nodeConnected to ground or lower-potential rail in shunt regulator configuration
CathodeZener breakdown terminal / regulated output nodeProvides stable 24 V reference when reverse-biased above VZ; marked by band

Key Features

Feature Design Value
Voidless hermetic glass constructionEliminates internal voids to prevent moisture ingress and ensure >20-year shelf life in sealed assemblies
Category I metallurgical bondInternal tungsten-copper bond structure rated for JANTXV/JANS reliability levels per MIL-PRF-19500/533
Radiation hardnessInherently radiation-tolerant per Microsemi MicroNote 050 - suitable for space-grade LEO/MEO missions
ESD immunityNon-sensitive per MIL-STD-750 Method 1020 - withstands >4 kV HBM without parameter shift
RoHS-compliant optionAvailable in commercial grade only with matte tin finish - supports lead-free assembly without derating

Applications

Aerospace Power Conditioning Defense System Reference

Use Scenario: Regulating auxiliary supply rails in satellite power management units exposed to thermal cycling and total ionizing dose.

IC Role / Device Role / Timing Role: Shunt voltage reference providing stable 24 V bias for ADCs, op-amps, and FPGA configuration circuitry.

Use Value: Maintains <±1.2% regulation over -55 °C to +125 °C ambient due to +0.088 %/°C αVZ and 18 Ω ZZ.

Use Scenario: Precision voltage clamping in radar receiver front-end protection circuits operating under EMP stress.

IC Role / Device Role / Timing Role: Transient voltage suppressor and DC clamp protecting RF amplifier bias lines.

Use Value: Withstands 18 A surge (8.3 ms square wave) and limits clamping voltage to ≤27.0 V at 18.0 V working peak.

Nuclear Instrumentation High-Reliability Industrial Control

Use Scenario: Biasing photomultiplier tube (PMT) gain stages in radiation monitoring equipment deployed in reactor containment zones.

IC Role / Device Role / Timing Role: High-stability Zener reference enabling sub-0.1% gain calibration accuracy over 15+ year service life.

Use Value: Zero parametric drift after 100 krad(Si) exposure confirmed per MicroNote 050; hermetic seal prevents humidity-induced degradation.

Use Scenario: Providing fault-tolerant reference voltage for safety PLC analog input modules in oil & gas control cabinets.

IC Role / Device Role / Timing Role: Redundant shunt regulator backing up active references in SIL-2 certified subsystems.

Use Value: Qualified to JAN/JANTXV levels with 100% lot testing - meets IEC 61508 hardware fault tolerance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N6333USSame die, identical electrical specs; differs only in packaging - bulk vs. tape-and-reel (TR)No functional difference; TR version optimized for automated SMT placementSelect 1N6333US/TR when using pick-and-place machines with EIA-481-B compliant feeders
1N6333DUSSame package and Zener voltage, but ±1% tolerance (D suffix) vs. ±5% (no suffix)Higher initial accuracy required for metrology-grade references; tighter tempco not guaranteedChoose 1N6333DUS where absolute voltage accuracy at 25 °C outweighs cost sensitivity

Compared with 1N6333US/TR, the 1N6333US offers identical performance in bulk form but lacks tape-and-reel logistics support, while 1N6333DUS trades wider tolerance band for higher precision - making it preferable for calibration-critical designs despite higher unit cost.

Availability

1N6333US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, defense system reference, and nuclear instrumentation requiring stable component supply with full traceability and long-lifecycle assurance.

Supply support for 1N6333US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified analog and mixed-signal components.

The 1N63xxUS series belongs to Microsemi's legacy MIL-PRF-19500/533 qualified Zener diode product line, engineered specifically for mission-critical voltage regulation in defense, space, and nuclear applications where failure is not an option.

FAQ

What is the Zener voltage tolerance for 1N6333US/TR?

The 1N6333US/TR has a nominal Zener voltage of 24.0 V with a standard tolerance of ±5%, as defined in the Electrical Characteristics table on page 3 of the T4-LDS-0193-1 datasheet. This tolerance applies at 24 mA test current and 25 °C ambient. Tighter tolerances (±1% or ±2%) are available under different part number suffixes (e.g., D or C), but 1N6333US/TR specifically uses the base 5% variant.

Is 1N6333US/TR RoHS compliant?

Yes, 1N6333US/TR is available in RoHS-compliant versions with matte tin finish on the copper end caps, but only for commercial-grade units. The RoHS designation is indicated by the "e3" suffix in the full part nomenclature (e.g., JAN 1N6333US e3). Military-grade variants (JAN/JANTXV/JANS) retain Sn/Pb terminations per qualification requirements.

What is the maximum surge current rating for 1N6333US/TR?

The 1N6333US/TR is rated for a non-repetitive peak Zener surge current (IZSM) of 18.0 A under an 8.3 ms square-wave pulse, as specified in the Electrical Characteristics table. This value reflects its robustness against transient overvoltage events in protection circuits, consistent with the 1N6321US–1N6355US thermal resistance class (RθJEC = 21 °C/W).

Does 1N6333US/TR require derating above 150 °C end-cap temperature?

Yes, 1N6333US/TR must be derated linearly above 150 °C end-cap temperature (TEC), as shown in Figure 2 of the datasheet. Its steady-state power dissipation drops from 0.5 W at 150 °C to zero at 175 °C, following a slope of -21 °C/W (RθJEC). Derating is mandatory to avoid junction overheating and parametric shift.

How is polarity identified on the 1N6333US/TR package?

Polarity on the 1N6333US/TR is indicated by a visible cathode band located near one end cap of the B-SQ MELF glass body. The banded end is the cathode; the opposite end is the anode. This marking aligns with JEDEC-standard MELF diode orientation and is verified in the Mechanical and Packaging section (page 2) of the T4-LDS-0193-1 datasheet.

1N6333US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, B
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
24 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
24 Ohms
Current - Reverse Leakage @ Vr:
50 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
B, SQ-MELF

1N6333US/TR FAQ

1.How can I place an order for 1N6333US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6333US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6333US/TR reliable?

The price and inventory of 1N6333US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6333US/TR is usually 5 days.

3.What payment methods are accepted for 1N6333US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6333US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6333US/TR?

1N6333US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6333US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6333US/TR?

For technical support, including 1N6333US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6333US/TR requirements.

6.How does Aetrix verify that 1N6333US/TR is sourced from the original manufacturer or authorized distributors?

All 1N6333US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6333US/TR meets industry standards.

7.What is the process for return or replacement of 1N6333US/TR?

All 1N6333US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6333US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6333US/TR part is unused and in its original packaging.

Return procedure for 1N6333US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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