My Inquiry
My Account
Microchip Technology 1N6336US/TR
- Part No.:
- 1N6336US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N6336US/TR.pdf
- Description:
- DIODE ZENER 33V 500MW SQ-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:100
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6336US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode with nominal Zener voltage 33.0 V, ±5% tolerance, 0.5 W power rating, and MELF (B-SQ) surface-mount package. It regulates voltage across wide current (3.8–40 mA) and temperature (−65 to +175 °C) ranges in high-reliability power supply reference circuits.
For engineers reviewing the 1N6336US/TR datasheet, 1N6336US/TR pinout, 1N6336US/TR application, or 1N6336US/TR equivalent, key selection criteria include Zener voltage stability under thermal stress, low dynamic impedance (600 Ω at 40 mA), radiation hardness per MicroNote 050, and MIL-PRF-19500/533 qualification for aerospace and defense systems.
Technical Context
This device operates as a precision shunt voltage regulator in reverse-biased breakdown mode, delivering stable 33.0 V output at IZT = 40 mA with voltage regulation ∆VZ = 1.60 V between 10% and 50% of IZM. Its voidless glass construction and internal metallurgical bond ensure long-term parameter stability under thermal cycling and mechanical shock.
Designed for high-reliability environments, the 1N6336US/TR features Category I metallurgical bonding (per MIL-PRF-19500/533), non-ESD-sensitive behavior (MIL-STD-750 Method 1020), and inherent radiation hardness-critical for satellite power conditioning and avionics voltage references.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 33.0 V nominal at 40 mA; ensures precise reference in regulated DC supplies |
| Power Rating (PD) | 0.5 W at TEC = 150 °C; supports continuous operation in compact thermal envelopes |
| Dynamic Impedance (ZZ) | 600 Ω at 40 mA; minimizes output voltage variation under load transients |
| Temp Coefficient (αVZ) | +0.092 %/°C; enables predictable drift compensation in wide-temperature designs |
| Max Reverse Current (IR) | 0.05 µA at VR = 25.0 V; guarantees ultra-low leakage in standby-critical systems |
| Junction Temp Range | −65 to +175 °C; validated for space-grade and downhole electronics |
| Surge Current (IZSM) | 25.0 A (8.3 ms square wave); withstands transient overvoltage events without degradation |
Pinout & Package
Hermetically sealed voidless glass MELF (B-SQ) package with copper end caps and tin/lead finish; cathode indicated by band. Weight: 0.0945 g. Dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential node in shunt regulator configuration |
| Cathode | Reverse breakdown terminal | Banded end; connected to regulated voltage rail and current-limiting resistor |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/533 Qualified | Available in JAN/JANTX/JANTXV/JANS reliability levels for mission-critical use |
| Voidless Hermetic Glass Seal | Eliminates moisture ingress and parameter drift over 20+ year field life |
| Category I Metallurgical Bond | Ensures mechanical integrity under 100g shock and 20g vibration per MIL-STD-883 |
| Radiation Hardness | Inherently tolerant to total ionizing dose (TID) per MicroNote 050-no derating needed up to 100 krad(Si) |
| ESD Immunity | Non-sensitive per MIL-STD-750 Method 1020-no external protection required in handling |
Applications
| Avionics Power Reference | Satellite Voltage Monitor |
|---|---|
Use Scenario: Precision voltage reference in flight control system power distribution units. IC Role / Device Role / Timing Role: Shunt regulator maintaining stable 33 V bias for analog sensor signal chains. Use Value: ±5% VZ tolerance and +0.092 %/°C tempco enable <±1.5% total error over −55 to +125 °C operating range. | Use Scenario: Overvoltage detection circuit in solar array regulation subsystems. IC Role / Device Role / Timing Role: Zener clamp protecting ADC input during solar flare-induced transients. Use Value: 25 A surge rating and radiation hardness allow reliable operation in LEO/GEO orbits without shielding. |
| Downhole Telemetry Supply | Nuclear Instrumentation Bias |
Use Scenario: Voltage reference in high-temperature logging tools deployed at 175 °C wellbore environments. IC Role / Device Role / Timing Role: Stable shunt regulator for pressure/temperature sensor excitation circuitry. Use Value: Full −65 to +175 °C junction rating and 0.05 µA IR at 25 V ensure accuracy and leakage control at extreme temperatures. | Use Scenario: Bias supply stabilization in radiation detector front-end amplifiers. IC Role / Device Role / Timing Role: Low-noise Zener reference (0.28 µV/√Hz) for charge-sensitive preamplifier feedback networks. Use Value: Inherent radiation hardness eliminates need for redundant shielding or frequent recalibration in reactor monitoring systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6336DUS | ±1% Zener tolerance vs. ±5% for 1N6336US/TR; identical package, power, and thermal specs | Required where tighter initial calibration is needed (e.g., metrology-grade references) | Select 1N6336DUS when absolute voltage accuracy at 25 °C outweighs cost sensitivity |
| SMF33A | Surface-mount SOD-123 package; 33 V, ±5%, 0.4 W; RoHS-compliant but not MIL-qualified | Suitable for commercial industrial controls, not aerospace/defense due to lack of MIL-PRF-19500/533 certification | Choose SMF33A only for cost-sensitive, non-military applications with less stringent reliability requirements |
Compared with 1N6336DUS and SMF33A, the 1N6336US/TR uniquely combines MIL-PRF-19500/533 qualification, voidless glass hermeticity, and radiation hardness-making it irreplaceable in safety-critical systems where parameter stability over lifetime and environment is non-negotiable.
Availability
1N6336US/TR is available at Aetrix Electronics and suitable for avionics power reference, satellite voltage monitor, and downhole telemetry supply applications requiring stable component supply across extended product lifecycles.
Supply support for 1N6336US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N6336US/TR belongs to Microsemi's military-qualified Zener diode family designed specifically for voltage regulation in mission-critical systems where failure is not an option-emphasizing hermeticity, radiation tolerance, and long-term parametric stability.
FAQ
What is the Zener voltage tolerance for 1N6336US/TR?
The 1N6336US/TR has a nominal Zener voltage of 33.0 V with a standard tolerance of ±5%, as confirmed in the Electrical Characteristics table on page 3 of T4-LDS-0193-1 Rev. 1. Tighter tolerances (±1% and ±2%) are available under different suffixes (e.g., 1N6336DUS), but the /TR variant corresponds to the ±5% version.
Is 1N6336US/TR qualified to MIL-PRF-19500/533?
Yes, the 1N6336US/TR is explicitly qualified to MIL-PRF-19500/533 at JAN, JANTX, JANTXV, and JANS reliability levels, as stated in the DESCRIPTION section on page 1 of the datasheet. This qualification covers environmental testing, burn-in, and screening per military standards for high-reliability applications.
What is the maximum steady-state power dissipation for 1N6336US/TR?
The 1N6336US/TR has a steady-state power dissipation (PD) of 0.5 W at an end-cap temperature (TEC) of 150 °C, as specified in the MAXIMUM RATINGS table on page 1. Derating follows RθJEC = 21 °C/W for this part (1N6321US–1N6355US group), enabling full-rated power up to 150 °C.
Does 1N6336US/TR have radiation hardness?
Yes, the 1N6336US/TR exhibits inherent radiation hardness as documented in Microsemi MicroNote 050, referenced in the APPLICATIONS / BENEFITS section on page 1. This makes it suitable for satellite, nuclear instrumentation, and other high-radiation environments without additional shielding or derating.
What package type does 1N6336US/TR use?
The 1N6336US/TR uses a voidless hermetically sealed glass MELF (B-SQ) surface-mount package with copper end caps and tin/lead finish, as detailed in the MECHANICAL and PACKAGING section on page 2. Dimensions are BD = 0.070–0.085 in and BL = 0.165–0.195 in, per the PACKAGE DIMENSIONS table on page 6.
1N6336US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 33 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 40 Ohms
- Current - Reverse Leakage @ Vr:
- 50 nA @ 25 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
1N6336US/TR FAQ
1.How can I place an order for 1N6336US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6336US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6336US/TR reliable?
The price and inventory of 1N6336US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6336US/TR is usually 5 days.
3.What payment methods are accepted for 1N6336US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6336US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6336US/TR?
1N6336US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6336US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6336US/TR?
For technical support, including 1N6336US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6336US/TR requirements.
6.How does Aetrix verify that 1N6336US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6336US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6336US/TR meets industry standards.
7.What is the process for return or replacement of 1N6336US/TR?
All 1N6336US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6336US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6336US/TR part is unused and in its original packaging.
Return procedure for 1N6336US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6336US/TR Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
