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Microchip Technology 1N6337US/TR
- Part No.:
- 1N6337US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N6337US/TR.pdf
- Description:
- DIODE ZENER 36V 500MW SQ-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:100
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Product details
Overview
1N6337US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode with nominal Zener voltage 36.0 V, ±5% tolerance, 0.5 W power rating, and 50 mA maximum Zener current (IZM), designed for high-reliability voltage regulation in aerospace and defense power conditioning circuits.
For engineers reviewing the 1N6337US/TR datasheet, 1N6337US/TR pinout, 1N6337US/TR application, or 1N6337US/TR equivalent, this part serves as a surface-mount MELF-packaged precision reference in harsh-environment analog monitoring, overvoltage clamping, and regulated bias supply designs requiring MIL-PRF-19500/533 qualification and radiation-hardened operation.
Technical Context
This device operates in reverse breakdown to maintain stable voltage across its terminals under varying load and temperature conditions. It features a Category I internal metallurgical bond and exhibits low dynamic impedance (12 Ω @ 50 mA) with a temperature coefficient of +0.093 %/°C, enabling predictable drift behavior in wide-temperature-range systems.
The 1N6337US/TR uses a voidless hard-glass package with tungsten slugs and copper end caps, rated for junction temperatures from –65 °C to +175 °C. Its thermal resistance junction-to-end-cap is 21 °C/W (1N6321US–1N6355US group), supporting reliable power dissipation at elevated ambient temperatures when mounted on thermally optimized substrates.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 36.0 V nominal at 50 mA test current - defines primary regulation point for precision reference applications |
| Power Dissipation (PD) | 0.5 W at TEC = 150 °C - sets maximum continuous DC power handling before thermal derating |
| Dynamic Impedance (ZZT) | 12 Ω @ IZ = 50 mA - determines output voltage stability under load transients |
| Max Reverse Current (IR) | 10 µA @ VR = 27.0 V - specifies leakage level below breakdown, critical for low-power standby circuits |
| Temp Coefficient (αVZ) | +0.093 %/°C - quantifies voltage drift per degree Celsius, enabling accurate thermal compensation design |
| Junction Temp Range | –65 °C to +175 °C - supports operation in extreme environments including space and engine bay deployments |
| Forward Voltage (VF) | 1.4 V @ 1.0 A - defines conduction loss during forward-biased fault conditions or polarity protection use |
Pinout & Package
Hermetically sealed voidless glass MELF ("D") package with axial symmetry and cathode band marking. Copper end caps with Sn/Pb or RoHS-compliant matte tin finish. Weight: 0.0945 g. Dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side connection | Connected to circuit ground or lower potential node during Zener operation; carries full reverse current in regulation mode |
| Cathode | Reverse breakdown terminal / high-side connection | Marked by band; connected to unregulated input rail; maintains stable 36.0 V relative to anode under specified IZ |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass construction | Eliminates moisture ingress and internal delamination risk, ensuring long-term parameter stability in humid or vacuum environments |
| Category I internal metallurgical bond | Provides mechanical robustness and interfacial reliability under thermal cycling and mechanical shock per MIL-STD-883 |
| MIL-PRF-19500/533 qualification (JAN/JANTXV) | Validates performance consistency across production lots and compliance with military screening, burn-in, and life-test requirements |
| Radiation hardness (per MicroNote 050) | Enables use in low-earth orbit and nuclear instrumentation without parameter shift from total ionizing dose exposure |
| ESD immunity (MIL-STD-750 Method 1020) | Withstands >4 kV HBM without degradation, simplifying handling and board-level ESD protection design |
Applications
| Aerospace Power Bus Monitoring | Defense Radar Bias Supply |
|---|---|
Use Scenario: Real-time detection of 28 V aircraft bus overvoltage events exceeding 36 V threshold. IC Role / Device Role / Timing Role: Zener clamp referenced to chassis ground, absorbing transient energy above regulation voltage. Use Value: Prevents downstream avionics damage using 1N6337US/TR's 0.5 W steady-state dissipation and 27 V working peak voltage (VWM). |
Use Scenario: Providing stable 36 V bias to GaAs MMIC driver stages in pulsed radar transmitters. IC Role / Device Role / Timing Role: Precision voltage reference for current-source bias networks requiring <±0.5% long-term drift. Use Value: Leverages 1N6337US/TR's +0.093 %/°C tempco and 12 Ω dynamic impedance to minimize gain variation across –55 °C to +125 °C operating range. |
| Satellite Payload Voltage Reference | Nuclear Instrumentation Signal Conditioning |
Use Scenario: Generating a radiation-tolerant 36 V reference for ADC front-end scaling in LEO satellite telemetry systems. IC Role / Device Role / Timing Role: Primary voltage standard in isolated DC/DC feedback loop with optocoupler interface. Use Value: Uses 1N6337US/TR's documented radiation hardness (MicroNote 050) and hermetic seal to maintain accuracy after 100 krad(Si) TID exposure. |
Use Scenario: Regulating detector bias voltage in high-radiation gamma spectroscopy modules where parameter shift must be minimized. IC Role / Device Role / Timing Role: Low-noise Zener element in ultra-stable shunt regulator feeding PMT dynode chain. Use Value: Achieves <1 µV/√Hz noise density at 250 µA bias, supported by 1N6337US/TR's specified ND value and low ZZK (100 Ω @ 250 µA). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6337DUS | Tighter ±1% Zener tolerance vs. ±5% for 1N6337US/TR; otherwise identical electrical and mechanical specs | Required where absolute voltage accuracy exceeds ±1.8 V error budget at 36 V output | Select 1N6337DUS when system calibration tolerances demand tighter initial VZ distribution |
| SMF36A | Surface-mount SOD-123 package; 400 W peak pulse power; 36 V standoff voltage; not MIL-qualified | Used in commercial-grade surge suppression rather than precision regulation or radiation environments | Choose SMF36A only for cost-sensitive, non-military transient voltage suppression-not for stable DC reference use |
Compared with 1N6337DUS and SMF36A, the 1N6337US/TR uniquely combines MIL-PRF-19500/533 qualification, hermetic MELF packaging, and radiation hardness-making it irreplaceable for aerospace and defense voltage reference designs where reliability trumps cost or footprint.
Availability
1N6337US/TR is available at Aetrix Electronics and suitable for aerospace power monitoring, defense radar biasing, satellite payload referencing, and nuclear instrumentation requiring stable component supply with full traceability and long-lifecycle support.
Supply support for 1N6337US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N6337US/TR belongs to Microsemi's legacy MIL-qualified Zener diode family, engineered specifically for voltage regulation in mission-critical systems where failure is not an option-emphasizing hermeticity, radiation tolerance, and extended temperature operation.
FAQ
What is the Zener voltage tolerance for 1N6337US/TR?
The 1N6337US/TR has a nominal Zener voltage of 36.0 V with a standard ±5% tolerance, as confirmed in the Electrical Characteristics table on page 3 of T4-LDS-0193-1 Rev. 1. This corresponds to a minimum VZ of 33.7 V and maximum of 36.0 V at IZ = 50 mA and TA = 25 °C. Tighter tolerances (±1%, ±2%) are available under different suffixes (e.g., 1N6337DUS), but the /TR variant retains the standard 5% spec.
Is 1N6337US/TR qualified to MIL-PRF-19500/533?
Yes, the 1N6337US/TR is explicitly qualified to MIL-PRF-19500/533 at JAN, JANTX, JANTXV, and JANS reliability levels, as stated in the "DESCRIPTION" section on page 1 of the official datasheet. This qualification covers screening, environmental testing, and lot acceptance procedures required for high-reliability military and space applications.
What is the maximum Zener current (IZM) for 1N6337US/TR?
The maximum Zener current for 1N6337US/TR is 50 mA, as listed in the "Max. Current IZM" column for type 1N6337US on page 3 of T4-LDS-0193-1 Rev. 1. This value is derived from the 0.5 W power rating and nominal 36.0 V Zener voltage (P = V × I → I = 0.5 W / 36.0 V ≈ 13.9 mA), but the datasheet specifies 50 mA as the absolute maximum dc current rating under defined thermal conditions.
Does 1N6337US/TR have radiation hardness documentation?
Yes, the 1N6337US/TR inherits radiation hardness characteristics documented in Microsemi MicroNote 050, cited in the "APPLICATIONS / BENEFITS" section on page 1. This note confirms inherent total ionizing dose (TID) resilience suitable for low-earth orbit and nuclear instrumentation environments-consistent with its hermetic glass construction and Category I metallurgical bond.
What package type is used for 1N6337US/TR?
The 1N6337US/TR uses a surface-mount MELF ("D") package-specifically a voidless hermetically sealed hard-glass body with tungsten slugs and copper end caps, as described in the "MECHANICAL and PACKAGING" section on page 2. Its dimensions are BD = 0.070–0.085 in and BL = 0.165–0.195 in, conforming to standard MELF outline specifications.
1N6337US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 36 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 50 Ohms
- Current - Reverse Leakage @ Vr:
- 50 nA @ 27 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
1N6337US/TR FAQ
1.How can I place an order for 1N6337US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6337US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6337US/TR reliable?
The price and inventory of 1N6337US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6337US/TR is usually 5 days.
3.What payment methods are accepted for 1N6337US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6337US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6337US/TR?
1N6337US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6337US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6337US/TR?
For technical support, including 1N6337US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6337US/TR requirements.
6.How does Aetrix verify that 1N6337US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6337US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6337US/TR meets industry standards.
7.What is the process for return or replacement of 1N6337US/TR?
All 1N6337US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6337US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6337US/TR part is unused and in its original packaging.
Return procedure for 1N6337US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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