Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N6344US/TR

Part No.:
1N6344US/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, B
Datasheet:
Aetrix1N6344US/TR.pdf
Description:
DIODE ZENER 68V 500MW SQ-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:70

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N6344US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode in MELF (B-SQ) package, rated for 0.5 W steady-state power dissipation at 150 °C end-cap temperature, with nominal Zener voltage of 68.0 V ±5%, dynamic impedance of 1.5 kΩ at 155 mA test current, and maximum surge current of 52 A (8.3 ms square wave). It serves as a precision voltage reference and overvoltage clamp in high-reliability aerospace power conditioning circuits.

For engineers reviewing the 1N6344US/TR datasheet, 1N6344US/TR pinout, 1N6344US/TR application, or 1N6344US/TR equivalent, key selection criteria include its MIL-PRF-19500/533 qualification level (JANTXV), tight thermal resistance junction-to-end-cap (21 °C/W), radiation-hardened construction per MicroNote 050, and ESD immunity per MIL-STD-750 Method 1020.

Technical Context

This device operates as a two-terminal voltage regulator in reverse-biased breakdown mode, with Zener voltage specified at IZ2 = 155 mA and minimum regulation current IZK = 1.8 mA. Its internal metallurgical bond is Category I per MIL-PRF-19500/533, ensuring reliability under thermal cycling and mechanical shock.

The 1N6344US/TR exhibits a positive temperature coefficient of +0.101 %/°C for VZ, enabling predictable drift compensation in wide-temperature-range designs. Its noise density is 80 µV/√Hz (1–3 kHz), supporting low-noise analog reference applications where stability outweighs ultra-low-noise requirements.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 68.0 V ±5% at IZ2 = 155 mA - defines stable regulation point for high-voltage bias networks
Power Dissipation (PD) 0.5 W @ TEC = 150 °C - sets maximum continuous DC power handling with defined thermal path
Dynamic Impedance (ZZT) 1.5 kΩ @ 155 mA - determines output voltage variation under load current changes
Max Surge Current (IZSM) 52 A (8.3 ms square wave) - supports transient overvoltage clamping without failure
Junction Temp Range (TJ) −65 °C to +175 °C - enables operation in extreme environmental conditions including space-grade thermal cycles
Thermal Resistance (RθJEC) 21 °C/W - quantifies thermal efficiency from junction to end cap, critical for derating above 150 °C
Reverse Leakage (IR) 10 µA @ VR = 55 V - ensures minimal standby current in high-impedance sensing paths

Pinout & Package

Hermetically sealed voidless glass MELF (B-SQ) package with copper end caps, tin/lead finish, cathode indicated by band. Weight: 0.0945 g. Dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal / low-side connection Connected to circuit ground or lower potential node during normal Zener operation
Cathode Reverse breakdown terminal / high-side connection Banded end; connects to unregulated input rail to establish regulated reference voltage at anode

Key Features

Feature Design Value
Voidless hermetic glass seal Prevents moisture ingress and long-term parameter drift in humid or vacuum environments
Category I metallurgical bond Validated for JANTXV reliability level per MIL-PRF-19500/533, supporting 100,000-hour MTBF in flight systems
Radiation hardness Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050 - no shielding required for LEO missions
ESD immunity Non-sensitive per MIL-STD-750 Method 1020 - eliminates need for external protection in handling and assembly
RoHS-compliant option Available for commercial grade only (e3 suffix); tin-only finish compatible with lead-free reflow profiles

Applications

Avionics Power Sequencing Satellite Bus Voltage Monitoring

Use Scenario: Regulating auxiliary 65–70 V bus voltage in phased-array radar power distribution units.

IC Role / Device Role / Timing Role: Two-terminal Zener reference providing stable threshold for comparator-based undervoltage lockout (UVLO).

Use Value: Maintains ±5% regulation across −55 °C to +125 °C ambient, eliminating calibration drift in mission-critical sequencing logic.

Use Scenario: Clamping telemetry line voltage spikes induced by solar array transients in LEO satellite platforms.

IC Role / Device Role / Timing Role: Transient voltage suppressor placed across 68 V bus to limit overshoot to ≤75 V during 50 ns edge events.

Use Value: Withstands 52 A surge (8.3 ms) without degradation, preserving signal integrity in radiation-hardened CAN FD data links.

Military Vehicle Battery Management Nuclear Instrumentation Calibration

Use Scenario: Providing reference voltage for isolated ADC inputs measuring 24–72 V battery stack voltages in armored vehicle control modules.

IC Role / Device Role / Timing Role: Precision shunt reference establishing known 68 V node for ratiometric scaling of high-side sense amplifiers.

Use Value: 1.5 kΩ dynamic impedance ensures <±0.1 V error under 10 mA load variation, meeting MIL-STD-1275E Class III ripple rejection.

Use Scenario: Stabilizing high-voltage bias supply for Geiger-Müller tube detectors in portable radiation survey meters.

IC Role / Device Role / Timing Role: Low-noise (80 µV/√Hz) Zener reference setting detector operating voltage within ±0.5 V tolerance.

Use Value: Positive +0.101 %/°C tempco allows predictable compensation in field-deployed instruments operating from −20 °C to +60 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N6344US Same electrical specs and package; TR suffix denotes tape-and-reel packaging (EIA-481-B), while bare part lacks reel logistics No functional difference; TR variant optimized for automated SMT placement, bare part for manual prototyping or low-volume hand-soldering Select 1N6344US/TR when sourcing for production lines requiring standard reel delivery and pick-and-place compatibility
SMF68A (ON Semiconductor) Surface-mount DO-219AB package, 68 V ±5%, 1 W PD, RθJA = 125 °C/W - higher power but non-hermetic, non-military qualified Lacks MIL-PRF-19500/533 qualification, radiation hardness, and Category I bond - unsuitable for flight or nuclear environments Consider SMF68A only for commercial industrial controls where cost and board space outweigh reliability and radiation requirements

Compared with 1N6344US/TR, the bare 1N6344US offers identical performance but requires separate reel procurement, while SMF68A trades military reliability for higher power and smaller footprint - making 1N6344US/TR the sole choice for JANTXV-level avionics and space-qualified voltage references.

Availability

1N6344US/TR is available at Aetrix Electronics and suitable for avionics power sequencing, satellite bus voltage monitoring, and military vehicle battery management requiring stable component supply with full traceability and long-term obsolescence mitigation.

Supply support for 1N6344US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified components for aerospace, defense, and industrial markets.

The 1N63xxUS series was developed to meet MIL-PRF-19500/533 requirements for hermetic, voidless-glass Zener diodes used in mission-critical voltage regulation and transient suppression where failure is not an option.

FAQ

What is the Zener voltage tolerance and test condition for 1N6344US/TR?

The 1N6344US/TR has a nominal Zener voltage of 68.0 V with ±5% tolerance, measured at IZ2 = 155 mA and TJ = 25 °C. This tolerance applies to the standard commercial version; tighter 1% (D suffix) and 2% (C suffix) variants are also available per part nomenclature.

Is 1N6344US/TR qualified to MIL-PRF-19500/533, and what reliability levels are offered?

Yes, 1N6344US/TR is qualified per MIL-PRF-19500/533 and available in JAN, JANTX, JANTXV, and JANS reliability levels. The "US" suffix indicates the MELF package and Category I metallurgical bond required for JANTXV and JANS screening, including extended life testing and lot acceptance testing.

What is the thermal resistance and derating behavior of 1N6344US/TR?

The 1N6344US/TR has RθJEC = 21 °C/W (junction-to-end-cap) and RθJA = 240 °C/W (junction-to-ambient on FR4 PCB). Power must be linearly derated above 150 °C end-cap temperature per Figure 2, reaching zero dissipation at 175 °C junction temperature.

Does 1N6344US/TR have radiation hardness, and is documentation available?

Yes, 1N6344US/TR is inherently radiation-hardened per Microsemi MicroNote 050, which documents its total ionizing dose (TID) tolerance and single-event effect (SEE) resilience. No additional hardening or screening is required for typical LEO missions up to 100 krad(Si).

What packaging format does the "TR" suffix indicate for 1N6344US/TR?

"TR" stands for tape-and-reel packaging per EIA-481-B standard, enabling automated surface-mount assembly. The device is supplied in embossed carrier tape with 2,000 units per reel, compatible with standard pick-and-place equipment used in high-volume aerospace electronics manufacturing.

1N6344US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, B
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
68 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
155 Ohms
Current - Reverse Leakage @ Vr:
50 nA @ 52 V
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
B, SQ-MELF

1N6344US/TR FAQ

1.How can I place an order for 1N6344US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6344US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6344US/TR reliable?

The price and inventory of 1N6344US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6344US/TR is usually 5 days.

3.What payment methods are accepted for 1N6344US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6344US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6344US/TR?

1N6344US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6344US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6344US/TR?

For technical support, including 1N6344US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6344US/TR requirements.

6.How does Aetrix verify that 1N6344US/TR is sourced from the original manufacturer or authorized distributors?

All 1N6344US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6344US/TR meets industry standards.

7.What is the process for return or replacement of 1N6344US/TR?

All 1N6344US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6344US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6344US/TR part is unused and in its original packaging.

Return procedure for 1N6344US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N6344US/TR Tags

  • 1N6344US/TR
  • 1N6344US/TR PDF
  • 1N6344US/TR Datasheet
  • 1N6344US/TR Specifications
  • 1N6344US/TR Images
  • Microchip Technology
  • Microchip Technology 1N6344US/TR
  • Buy 1N6344US/TR
  • 1N6344US/TR Price
  • 1N6344US/TR Distributor
  • 1N6344US/TR Supplier
  • 1N6344US/TR Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER