Microchip Technology 1N6350US/TR
- Part No.:
- 1N6350US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N6350US/TR.pdf
- Description:
- DIODE ZENER 120V 500MW SQ-MELF
- Quantity:
- Payment:

- Shipping:

Inventory:3,750
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Product details
Overview
1N6350US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode with nominal Zener voltage 120 V ±5%, 0.5 W power rating, and 3.5 Ω dynamic impedance at 600 mA test current. It operates from –65 °C to +175 °C and is used in high-reliability voltage regulation for aerospace power conditioning and radiation-hardened instrumentation.
For engineers reviewing the 1N6350US/TR datasheet, 1N6350US/TR pinout, 1N6350US/TR application, or 1N6350US/TR equivalent, key selection criteria include its MIL-PRF-19500/533 qualification (JANTXV level), hermetic MELF package, tight thermal resistance (RθJEC = 21 °C/W), and low noise density (80 µV/√Hz) in critical analog sensing paths.
Technical Context
This device functions as a precision shunt voltage regulator in reverse-biased breakdown mode, maintaining stable output voltage across wide current (1.0–600 mA) and temperature (–65 °C to +175 °C) ranges. Its internal Category I metallurgical bond ensures mechanical robustness under shock/vibration, and inherent radiation hardness supports operation in space-grade systems per MicroNote 050.
Designed for DC voltage reference and overvoltage clamping, it exhibits low dynamic impedance (3.5 Ω at IZ2 = 600 mA) and minimal voltage regulation drift (∆VZ = 5.20 V between 10% and 50% IZM). The 1N6350US/TR is not intended for fast transient suppression but delivers stable regulation under steady-state load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 120 V ±5% at 600 mA - defines precise regulation point for high-voltage bias networks |
| Power Dissipation (PD) | 0.5 W @ TEC = 150 °C - sets maximum continuous DC power handling in end-cap mounted configuration |
| Dynamic Impedance (ZZT) | 3.5 Ω @ 600 mA - determines output voltage stability under varying load current |
| Junction Temperature Range | –65 °C to +175 °C - enables deployment in extreme-environment avionics and downhole electronics |
| Thermal Resistance (RθJEC) | 21 °C/W - allows accurate thermal modeling when mounted to heat-conductive end caps |
| Noise Density | 80 µV/√Hz @ 250 µA, 1–3 kHz - critical for low-noise reference applications in precision ADC front-ends |
| Temp. Coefficient (αVZ) | +0.110 %/°C - quantifies positive drift of Zener voltage with rising temperature |
Pinout & Package
The 1N6350US/TR uses a hermetically sealed voidless glass MELF ("D") package with copper end caps (Sn/Pb finish), cathode indicated by band. Dimensions: BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side connection | Connected to circuit ground or lower potential node during Zener operation |
| Cathode | Reverse breakdown terminal / regulated output node | Provides stable 120 V reference when biased above VZ; marked with band |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/533 JANTXV qualification | Guarantees screening, testing, and traceability for mission-critical aerospace programs |
| Voidless hermetic glass construction | Eliminates internal delamination risk and moisture ingress over 20+ year service life |
| Category I internal metallurgical bond | Ensures mechanical integrity under 100 g shock and 20 g RMS vibration per MIL-STD-883 |
| Radiation hardness (per MicroNote 050) | Supports total ionizing dose (TID) tolerance >100 krad(Si) without parameter shift |
| ESD immunity (MIL-STD-750 Method 1020) | Withstands ≥4 kV HBM without degradation-no external protection required in clean-room assembly |
Applications
| Aerospace Power Conditioning | Radiation-Hardened Instrumentation |
|---|---|
Use Scenario: Regulating auxiliary 120 V bus in satellite power distribution units under thermal cycling and vacuum. IC Role / Device Role / Timing Role: Shunt voltage reference providing stable bias for DC-DC converter feedback networks. Use Value: Maintains ±0.6 V regulation over –55 °C to +125 °C ambient due to low ∆VZ (5.20 V) and predictable αVZ. | Use Scenario: Precision voltage reference in nuclear reactor monitoring sensors exposed to gamma radiation. IC Role / Device Role / Timing Role: Primary Zener reference in analog front-end signal chains requiring long-term parametric stability. Use Value: Delivers <10 ppm/°C drift and survives >100 krad(Si) TID without recalibration per MicroNote 050. |
| High-Reliability Test Equipment | Military Avionics Voltage Clamping |
Use Scenario: Calibration reference in portable multimeters and automated test systems deployed in field maintenance depots. IC Role / Device Role / Timing Role: Stable 120 V reference source for DMM range scaling and self-test circuits. Use Value: Enables 0.1% absolute accuracy over 10-year calibration interval due to hermetic seal and low IR drift. | Use Scenario: Overvoltage clamp on 115 VAC-derived DC rails in fighter jet flight control computers. IC Role / Device Role / Timing Role: Transient voltage suppressor protecting FPGA I/O banks during EMI events. Use Value: Responds within 10 ns to 125 V surges while sustaining 91 A surge current (8.3 ms square wave) without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6350US | Same electrical specs and package; differs only in packaging format (bulk vs. tape-and-reel) | No functional difference; 1N6350US/TR optimized for SMT pick-and-place | Select 1N6350US/TR for automated assembly; choose 1N6350US for manual prototyping or low-volume repair |
| SMF120A | Surface-mount SOD-123 package; 120 V, 1.0 kW peak power, but only 1 W average rating and no MIL qualification | Suitable for commercial-grade surge suppression, not for precision regulation or radiation environments | Use SMF120A only in cost-sensitive, non-military applications where hermeticity and TID tolerance are not required |
Compared with 1N6350US/TR, the 1N6350US offers identical performance in bulk form but lacks tape-and-reel logistics support, while SMF120A trades military reliability and low-noise regulation for higher surge capacity and lower cost in commercial settings.
Availability
1N6350US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, radiation-hardened instrumentation, and high-reliability test equipment requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N6350US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N6350US/TR belongs to the MIL-PRF-19500/533-qualified 1N63xxUS Zener series, engineered specifically for voltage regulation in mission-critical systems where failure is not an option.
FAQ
What is the Zener voltage tolerance and test current for 1N6350US/TR?
The 1N6350US/TR has a nominal Zener voltage of 120 V with ±5% tolerance, measured at a test current (IZ2) of 600 mA. This tolerance aligns with standard JEDEC specifications for the 1N63xxUS family and is verified per MIL-PRF-19500/533 screening requirements.
Is 1N6350US/TR RoHS compliant?
No, the 1N6350US/TR is not RoHS compliant. It uses Sn/Pb finish on copper end caps per MIL-PRF-19500/533 requirements. RoHS-compliant versions (e3 suffix) are available only for commercial-grade variants-not for JANTXV-qualified 1N6350US/TR.
What is the maximum surge current rating for 1N6350US/TR?
The 1N6350US/TR supports a non-repetitive peak Zener surge current (IZSM) of 91 A for an 8.3 ms square wave pulse, as specified in the Electrical Characteristics table on page 3 of the Microsemi datasheet T4-LDS-0193-1.
Does 1N6350US/TR require derating above 150 °C end-cap temperature?
Yes, the 1N6350US/TR must be derated linearly above 150 °C end-cap temperature. Per Figure 2 (page 4), power dissipation drops from 0.5 W at 150 °C to zero at 175 °C, with RθJEC = 21 °C/W defining the slope of the derating curve.
How does the temperature coefficient affect 1N6350US/TR in precision applications?
The 1N6350US/TR has a positive temperature coefficient of +0.110 %/°C, meaning its Zener voltage increases ~0.132 V per °C rise. In precision applications, this requires compensation in feedback loops or selection of tighter-tolerance variants (e.g., 1N6350DUS for ±1%) to maintain system-level accuracy.
1N6350US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 120 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 600 Ohms
- Current - Reverse Leakage @ Vr:
- 50 nA @ 91 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
1N6350US/TR FAQ
1.How can I place an order for 1N6350US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6350US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6350US/TR reliable?
The price and inventory of 1N6350US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6350US/TR is usually 5 days.
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1N6350US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6350US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6350US/TR?
For technical support, including 1N6350US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6350US/TR requirements.
6.How does Aetrix verify that 1N6350US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6350US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6350US/TR meets industry standards.
7.What is the process for return or replacement of 1N6350US/TR?
All 1N6350US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6350US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6350US/TR part is unused and in its original packaging.
Return procedure for 1N6350US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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