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Microchip Technology 1N6353US/TR

Part No.:
1N6353US/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, B
Datasheet:
Aetrix1N6353US/TR.pdf
Description:
DIODE ZENER 160V 500MW SQ-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,314

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Product details

Overview

1N6353US/TR from Microsemi is a military-qualified, voidless hermetically sealed glass Zener diode rated for 160 V nominal Zener voltage at 1.2 A test current, 0.5 W power dissipation, and ±5% tolerance, designed for high-reliability voltage regulation in aerospace and defense power conditioning circuits.

For engineers reviewing the 1N6353US/TR datasheet, 1N6353US/TR pinout, 1N6353US/TR application, or 1N6353US/TR equivalent, this part delivers radiation-hardened, ESD-insensitive, temperature-stable regulation across -65°C to +175°C with low dynamic impedance (2.7 Ω) and tight thermal resistance (21°C/W junction-to-end-cap).

Technical Context

This device operates as a precision shunt voltage regulator in reverse-biased breakdown mode, with Zener voltage specified at IZ = 1.2 A and characterized over full military temperature range (-65°C to +175°C). Its voidless glass construction and internal Category I metallurgical bond ensure long-term stability under thermal cycling and mechanical stress.

It exhibits a positive temperature coefficient of +0.110 %/°C above 100 V, low noise density (0.060 µV/√Hz), and surge capability up to 122 A (8.3 ms square wave), making it suitable for transient-suppressed reference and clamping in critical analog subsystems.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 160 V nominal at IZ = 1.2 A - defines stable regulation point for high-voltage biasing and reference generation
Power Dissipation (PD) 0.5 W @ TEC = 150°C - sets maximum continuous DC power handling without derating
Dynamic Impedance (ZZT) 2.7 Ω @ IZ = 1.2 A - determines output voltage variation under load current changes
Junction Temp Range -65°C to +175°C - enables operation in extreme environmental conditions without parameter drift
Thermal Resistance (RθJEC) 21°C/W - allows precise thermal modeling when mounted to heat-conducting end caps
Surge Current (IZSM) 122 A (8.3 ms square wave) - supports transient overvoltage clamping in protection circuits
Temp Coefficient (αVZ) +0.110 %/°C - quantifies voltage drift per degree rise above 25°C for system-level compensation

Pinout & Package

B-SQ MELF ("D") package: hermetically sealed voidless hard glass case with copper end caps (Sn/Pb or RoHS matte tin finish); cathode indicated by band; weight 0.0945 g; dimensions BD = 0.070–0.085 in (1.78–2.16 mm), BL = 0.165–0.195 in (4.19–4.95 mm).

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal / low-side connection Connected to circuit ground or lower potential node during Zener operation
Cathode Reverse breakdown terminal / regulated output node Provides stable 160 V reference when biased above VZ; marked with band

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates internal voids to prevent moisture ingress and parameter shift over 20+ year field life
Category I metallurgical bond Ensures mechanical integrity under shock/vibration per MIL-STD-883, critical for avionics mounting
Radiation hardness Inherently tolerant to total ionizing dose (TID) per MicroNote 050 - no derating needed in space-grade designs
ESD immunity Non-sensitive per MIL-STD-750 Method 1020 - survives >4 kV HBM without parameter degradation
MIL-PRF-19500/533 qualified Available in JAN, JANTX, JANTXV, JANS reliability levels - traceable lot documentation and screening included

Applications

High-Voltage Power Supply Reference Aerospace Sensor Biasing

Use Scenario: Stable 160 V reference for photomultiplier tube (PMT) gain control in radiation detection systems.

IC Role / Device Role / Timing Role: Shunt voltage regulator providing fixed bias voltage independent of input ripple or load variation.

Use Value: Maintains PMT gain stability within ±0.5% over -55°C to +125°C due to low tempco and hermetic construction.

Use Scenario: Precision bias source for MEMS gyroscope front-end amplifiers in inertial measurement units (IMUs).

IC Role / Device Role / Timing Role: Low-noise voltage reference (0.060 µV/√Hz) for analog signal chain DC offset setting.

Use Value: Enables <1 µV/°C drift performance in closed-loop IMU calibration without external compensation.

Satellite Power Bus Clamp Nuclear Instrumentation Clamping

Use Scenario: Overvoltage clamp on 150 V spacecraft bus during solar array transients.

IC Role / Device Role / Timing Role: Transient voltage suppressor absorbing 122 A surges (8.3 ms) without failure.

Use Value: Prevents downstream DC-DC converter damage while maintaining <10 ns response time due to low capacitance.

Use Scenario: Pulse-clamping element in scintillation detector pulse-shaping networks.

IC Role / Device Role / Timing Role: Fast-recovery Zener limiting peak pulse amplitude to protect ADC inputs.

Use Value: Delivers consistent 160 V clamping threshold across 10⁶ pulse cycles with zero parameter drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N6353DUS/TR ±1% Zener tolerance vs. ±5% for 1N6353US/TR; identical package, power rating, and temperature range Required where absolute voltage accuracy <±1.6 V is mandated (e.g., metrology-grade references) Select 1N6353DUS/TR only if tighter tolerance justifies higher cost and longer lead time
SMF160A Surface-mount SOD-123 package; 160 V standoff; 1 kW peak power; not hermetically sealed or MIL-qualified Suitable for commercial industrial controls but lacks radiation hardness, ESD immunity, and long-term stability Choose SMF160A only for non-critical, cost-sensitive, high-volume PCB assembly with no reliability certification required

Compared with 1N6353DUS/TR and SMF160A, the 1N6353US/TR uniquely combines military qualification, voidless glass hermeticity, and Category I bonding-enabling use in flight-critical systems where parameter stability over 15+ years is non-negotiable.

Availability

1N6353US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, nuclear instrumentation, satellite bus protection, and defense-grade sensor biasing requiring stable component supply across extended lifecycle programs.

Supply support for 1N6353US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The 1N6353US/TR belongs to Microsemi's legacy MIL-PRF-19500/533-qualified Zener series, engineered for mission-critical voltage regulation where failure is not an option-especially in radiation-exposed, thermally cycled, or high-shock environments.

FAQ

What is the Zener voltage tolerance for 1N6353US/TR?

The 1N6353US/TR has a standard ±5% Zener voltage tolerance, meaning its nominal 160 V breakdown voltage falls between 152 V and 168 V at IZ = 1.2 A and 25°C. This tolerance is confirmed in the Electrical Characteristics table on page 3 of Microsemi's T4-LDS-0193-1 datasheet and applies across the full operating temperature range.

Is 1N6353US/TR RoHS compliant?

The 1N6353US/TR is not RoHS compliant by default; RoHS-compliant versions (e.g., 1N6353US e3) are available only in commercial grade, not in JAN/JANTX/JANTXV/JANS reliability levels. The "e3" suffix denotes matte tin finish, while standard 1N6353US/TR uses Sn/Pb end caps per MIL-PRF-19500/533 requirements.

What is the maximum surge current rating for 1N6353US/TR?

The 1N6353US/TR is rated for a non-repetitive peak Zener surge current (IZSM) of 122 A under an 8.3 ms square-wave waveform, as specified in the Electrical Characteristics table. This value is validated per MIL-STD-750 Method 2072 and reflects single-event transient suppression capability without parametric shift.

Does 1N6353US/TR require derating above 150°C end-cap temperature?

Yes - the 1N6353US/TR must be derated linearly above TEC = 150°C using RθJEC = 21°C/W, per Figure 2 in the datasheet. At 175°C end-cap temperature, maximum allowable power drops to 0 W; full 0.5 W rating applies only at or below 150°C.

How is polarity indicated on the 1N6353US/TR package?

Polarity is indicated by a visible cathode band on the glass body of the 1N6353US/TR. The banded end is the cathode; the opposite end is the anode. This marking conforms to JEDEC standards and is verified in the Mechanical and Packaging section (page 2) of the T4-LDS-0193-1 datasheet.

1N6353US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, B
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
160 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
1200 Ohms
Current - Reverse Leakage @ Vr:
50 nA @ 122 V
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
B, SQ-MELF

1N6353US/TR FAQ

1.How can I place an order for 1N6353US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6353US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6353US/TR reliable?

The price and inventory of 1N6353US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6353US/TR is usually 5 days.

3.What payment methods are accepted for 1N6353US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6353US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6353US/TR?

1N6353US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6353US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6353US/TR?

For technical support, including 1N6353US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6353US/TR requirements.

6.How does Aetrix verify that 1N6353US/TR is sourced from the original manufacturer or authorized distributors?

All 1N6353US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6353US/TR meets industry standards.

7.What is the process for return or replacement of 1N6353US/TR?

All 1N6353US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6353US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6353US/TR part is unused and in its original packaging.

Return procedure for 1N6353US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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