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Microchip Technology 1N755AE3

Part No.:
1N755AE3
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-204AH, DO-35, Axial
Datasheet:
Aetrix1N755AE3.pdf
Description:
DIODE ZENER 7.5V 500MW DO204AH
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,572

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Product details

Overview

1N755AE3 from Microsemi is a 500 mW, 7.5 V ±5% Zener diode in DO-35 glass axial package, qualified to JANTX level per MIL-PRF-19500/127, with 4 Ω dynamic impedance at 50 mA and -65°C to +175°C operating temperature range. It provides precision voltage regulation in power supply reference and overvoltage protection circuits.

For engineers reviewing the 1N755AE3 datasheet, 1N755AE3 pinout, 1N755AE3 application, or 1N755AE3 equivalent, key selection criteria include Zener voltage tolerance, thermal resistance (250°C/W junction-to-lead), RoHS compliance status, military qualification level, and low reverse leakage (≤2 µA at 5.0 V).

Technical Context

The 1N755AE3 operates as a silicon-based Zener regulator with metallurgical bond construction for stable breakdown characteristics across wide temperature extremes. Its 7.5 V nominal Zener voltage is specified at 50 mA test current (IZT), with dynamic impedance of 4 Ω measured under 10% rms AC superimposed on IZT.

It exhibits a positive temperature coefficient of +0.058 %/°C at 25°C, indicating increasing VZ with rising temperature - critical for thermal stability analysis in high-reliability analog references. Reverse leakage remains ≤2 µA at VR = 5.0 V, supporting low-power biasing and sensing applications.

Key Specifications

ParameterValue and Actual Design Meaning
Nominal Zener Voltage7.5 V at 50 mA - defines regulated output voltage under standard test conditions
Zener Tolerance±5% - sets absolute voltage accuracy band (7.13–7.88 V) for design margining
Dynamic Impedance4 Ω at IZT = 50 mA - determines output voltage variation under load current changes
Max Reverse Leakage2 µA at VR = 5.0 V - ensures minimal error current in high-impedance reference nodes
Power Dissipation500 mW at TL = 50°C - establishes maximum continuous DC power before thermal derating begins
Temp Coefficient+0.058 %/°C at 25°C - quantifies VZ drift magnitude per degree for thermal compensation design
Operating Temp-65°C to +175°C - enables deployment in aerospace, downhole, and military environments

Pinout & Package

DO-35 (DO-204AH) hermetically sealed axial-leaded glass package with cathode indicated by colored band; leads are tin-lead or RoHS-compliant matte-tin plated per MIL-STD-750 method 2026.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminal / Zener cathode reference nodeConnected to lower-potential side during Zener operation; used for forward-bias testing
CathodeZener regulation terminal / voltage reference outputBanded end; connected to higher-potential side to maintain reverse bias and achieve 7.5 V regulation

Key Features

FeatureDesign Value
JANTX qualificationMIL-PRF-19500/127 certified for high-reliability defense/aerospace systems with full traceability
Metallurgical bondEliminates interfacial delamination risk under thermal cycling, ensuring long-term parameter stability
Low capacitanceMinimizes signal coupling in RF bypass and fast transient suppression applications
Radiation hardnessInherently resistant to total ionizing dose (TID), validated per Microsemi MicroNote 050
ESD robustnessNon-sensitive per MIL-STD-750 Method 1020 - simplifies handling without special ESD controls

Applications

Power Supply ReferenceOvervoltage Protection

Use Scenario: Stabilizing feedback voltage in linear regulator control loops or ADC reference dividers.

IC Role / Device Role / Timing Role: Provides fixed 7.5 V reference point independent of input ripple or load variation.

Use Value: Enables ±0.375 V regulation accuracy (±5%) and <0.1% line/load regulation error due to low ZZT and tight thermal coupling.

Use Scenario: Clamping transient surges on 5 V or 12 V rail inputs in avionics sensor interfaces.

IC Role / Device Role / Timing Role: Acts as shunt protector by conducting excess current above 7.5 V threshold.

Use Value: Limits peak voltage to ≤7.88 V (max VZ) with 2 µA leakage below clamp point, preserving downstream IC integrity.

Temperature-Stable BiasingMilitary Analog Signal Conditioning

Use Scenario: Generating bias currents for op-amp input stages in extended-temperature instrumentation.

IC Role / Device Role / Timing Role: Supplies temperature-compensated current via series resistor and +0.058%/°C αVZ.

Use Value: Delivers predictable current shift over -65°C to +175°C, reducing calibration drift in field-deployed test equipment.

Use Scenario: Voltage regulation in missile guidance subsystems requiring radiation-hardened components.

IC Role / Device Role / Timing Role: Serves as primary reference in analog front-end signal chains exposed to neutron/gamma fields.

Use Value: Maintains regulation performance after 100 krad(Si) TID exposure per MicroNote 050, avoiding system-level recalibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N755ASame 7.5 V ±5%, DO-35, but non-RoHS (tin-lead plating); no e3 suffixRestricted to legacy military programs where RoHS exemption appliesSelect when compliance documentation for leaded finish is required
1N755AUR-1Same electrical specs, but DO-213AA (MELF) surface-mount package; no axial leadsRequires PCB redesign for SMT assembly; unsuitable for through-hole prototypingSelect for automated production with space-constrained layouts

Compared with 1N755A and 1N755AUR-1, the 1N755AE3 uniquely combines RoHS compliance, JANTX qualification, and axial DO-35 packaging - making it the only option approved for new-design aerospace hardware requiring both environmental compliance and military-grade reliability.

Availability

1N755AE3 is available at Aetrix Electronics and suitable for aerospace power conditioning, defense-grade sensor biasing, and industrial temperature monitoring requiring stable component supply across extended lifecycle commitments.

Supply support for 1N755AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.

The 1N755AE3 belongs to Microsemi's legacy MIL-PRF-19500/127 qualified Zener diode family, engineered specifically for voltage reference stability under extreme thermal, radiation, and mechanical stress.

FAQ

What is the Zener voltage tolerance of the 1N755AE3?

The 1N755AE3 has a nominal Zener voltage of 7.5 V with a ±5% tolerance, meaning its actual regulation voltage falls between 7.13 V and 7.88 V when tested at 50 mA (IZT) and 25°C. This tolerance is defined per JEDEC standard and confirmed in the Electrical Characteristics table on page 3 of Microsemi T4-LDS-0288 Rev. 1.

Is the 1N755AE3 RoHS compliant?

Yes, the 1N755AE3 is RoHS compliant, as indicated by the "e3" suffix in its part number. Per Microsemi documentation, RoHS compliance applies only to commercial-grade versions, and the 1N755AE3 uses annealed matte-tin plating meeting EU Directive 2011/65/EU requirements.

What military qualification level does the 1N755AE3 meet?

The 1N755AE3 is qualified to JANTX level per MIL-PRF-19500/127, verified in the "Qualified Levels" section of the datasheet. It undergoes screening including temperature cycling, burn-in, and parametric testing to ensure reliability in defense and aerospace applications.

What is the maximum power dissipation of the 1N755AE3 at ambient temperature?

The 1N755AE3 dissipates up to 400 mW when mounted on a PCB at TA = 55°C, derating linearly to zero at 175°C. At lead temperature TL = 50°C (0.375 inch from body), it supports 500 mW - a key distinction for heatsink or chassis-mounted thermal design.

Does the 1N755AE3 have radiation hardness certification?

Yes, the 1N755AE3 is inherently radiation hard, as documented in Microsemi MicroNote 050. Its metallurgically bonded structure and glass DO-35 package provide proven resilience to total ionizing dose (TID), making it suitable for satellite and nuclear instrumentation applications.

1N755AE3 Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-204AH, DO-35, Axial
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
7.5 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
6 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-204AH (DO-35)

1N755AE3 FAQ

1.How can I place an order for 1N755AE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N755AE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N755AE3 reliable?

The price and inventory of 1N755AE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N755AE3 is usually 5 days.

3.What payment methods are accepted for 1N755AE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N755AE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N755AE3?

1N755AE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N755AE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N755AE3?

For technical support, including 1N755AE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N755AE3 requirements.

6.How does Aetrix verify that 1N755AE3 is sourced from the original manufacturer or authorized distributors?

All 1N755AE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N755AE3 meets industry standards.

7.What is the process for return or replacement of 1N755AE3?

All 1N755AE3 units undergo pre-shipment inspection (PSI). If there is an issue with 1N755AE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N755AE3 part is unused and in its original packaging.

Return procedure for 1N755AE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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