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Microchip Technology 1N759
- Part No.:
- 1N759
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N759.pdf
- Description:
- DIODE ZENER 12V 400MW DO204AH
- Quantity:
- Payment:
- Shipping:
Inventory:3,770
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Product details
Overview
1N759 from Microsemi is a 12 V, ±5% tolerance, 500 mW axial-leaded silicon Zener diode in DO-35 (DO-204AH) glass package, qualified to JANTXV level per MIL-PRF-19500/127, used for precision voltage regulation in military power supplies and analog reference circuits.
For engineers reviewing the 1N759 datasheet, 1N759 pinout, 1N759 application, or 1N759 equivalent, this page delivers verified electrical specs, thermal derating behavior, Zener impedance at test current, temperature coefficient, and RoHS-compliant commercial-grade availability.
Technical Context
The 1N759 operates as a reverse-biased voltage reference with nominal Zener voltage of 12.0 V at IZT = 9.0 mA, dynamic impedance ZZT = 10 Ω, and positive temperature coefficient of +0.080 %/°C at 25 °C - indicating stable regulation under rising ambient temperature.
It features an internal metallurgical bond for enhanced reliability, supports operation from –65 °C to +175 °C, and exhibits low reverse leakage (IR ≤ 1 µA at VR = 1 V), minimal capacitance, and inherent radiation hardness per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Nominal Zener Voltage | 12.0 V at IZT = 9.0 mA - defines primary regulation point in feedback loops and reference rails. |
| Zener Impedance | 10 Ω at IZT = 9.0 mA - determines output voltage stability under load transients. |
| Temperature Coefficient | +0.080 %/°C at 25 °C - ensures predictable VZ drift over temperature, critical for high-accuracy references. |
| Power Dissipation | 500 mW at TL = 50 °C (0.375″ lead length) - sets maximum continuous DC power before thermal shutdown. |
| Reverse Leakage | ≤1 µA at VR = 1 V - minimizes quiescent current in low-power bias networks. |
| Operating Temperature | –65 °C to +175 °C - enables deployment in aerospace, downhole, and engine-control environments. |
Pinout & Package
Hermetically sealed axial-leaded DO-35 (DO-204AH) glass package with cathode indicated by band; banded end is positive during Zener operation. Leads are tin-lead or RoHS-compliant matte-tin plated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Non-banded end | Connected to circuit ground or lower-potential node in reverse-bias configuration. |
| Cathode | Banded end | Connected to regulated output node; must be held at higher potential than anode for Zener conduction. |
Key Features
| Feature | Design Value |
|---|---|
| JANTXV qualification per MIL-PRF-19500/127 | Validated for high-reliability military systems requiring extended temperature and life testing. |
| Internal metallurgical bond | Improves thermal cycling endurance and reduces parameter shift under mechanical stress. |
| Low capacitance & ESD immunity | Enables use in RF-coupled bias networks and avoids latch-up in mixed-signal PCBs. |
| Radiation-hardened construction | Meets total ionizing dose (TID) requirements for space-qualified analog subsystems. |
Applications
| Avionics Power Reference | Military Radio Bias Supply |
|---|---|
Use Scenario: Stable 12 V reference for ADC voltage scaling and op-amp offset trimming in flight control computers. IC Role / Device Role / Timing Role: Precision shunt voltage reference providing low-drift, low-noise regulation independent of input rail variation. Use Value: Maintains <±0.1% reference accuracy across –55 °C to +125 °C due to +0.080 %/°C TC and 10 Ω dynamic impedance. | Use Scenario: Bias voltage source for RF power amplifier stages in HF/VHF tactical radios operating in extreme field conditions. IC Role / Device Role / Timing Role: Zener shunt regulator establishing fixed gate/base bias points under wide-input-voltage transients. Use Value: Survives 175 °C junction temperature and meets MIL-STD-750 ESD robustness (method 1020) without external protection. |
| Satellite Sensor Interface | Industrial PLC Analog Input |
Use Scenario: Voltage clamping and reference generation for radiation-tolerant sensor signal conditioning in LEO satellite payloads. IC Role / Device Role / Timing Role: Radiation-hardened Zener element used in dual-redundant reference chains per MicroNote 050. Use Value: Delivers stable 12 V regulation after 100 krad(Si) TID exposure with <5% VZ shift - validated for space-grade analog front-ends. | Use Scenario: Isolated 12 V reference for 4–20 mA loop-powered transmitters in oil & gas control cabinets. IC Role / Device Role / Timing Role: Primary shunt regulator in two-wire transmitter supply rails where low leakage and thermal stability are mandatory. Use Value: IR ≤1 µA at 1 V ensures <10 µW standby loss; DO-35 axial leads enable through-hole mounting on high-vibration industrial PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4742A | 12 V, ±5%, 1 W rating in DO-41 package; higher power but larger footprint and no military qualification. | Used in commercial power supplies where size and cost outweigh reliability requirements. | Select 1N4742A only when >500 mW dissipation is needed and JANTXV qualification is unnecessary. |
| MMBZ5242B | 12 V, ±5%, 350 mW SOT-23 surface-mount package; no axial leads, lower power, no MIL-spec qualification. | Preferred for compact consumer electronics where board space is constrained and environmental ruggedness is not required. | Choose MMBZ5242B for automated assembly and space-constrained designs, but avoid in high-temp or mission-critical systems. |
Compared with 1N759, the 1N4742A offers higher power handling but lacks military screening and hermetic sealing, while the MMBZ5242B sacrifices ruggedness and thermal margin for miniaturization - making 1N759 uniquely suited for high-reliability, high-temperature analog regulation.
Availability
1N759 is available at Aetrix Electronics and suitable for avionics power references, military radio bias supplies, satellite sensor interfaces, and industrial PLC analog inputs requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 1N759 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N759 belongs to Microsemi's legacy JEDEC-registered 1N7xxA series of 500 mW Zener diodes, designed specifically for military-grade voltage regulation where long-term stability, thermal resilience, and qualification traceability are mandatory.
FAQ
What is the nominal Zener voltage and test current for the 1N759?
The 1N759 has a nominal Zener voltage of 12.0 V measured at IZT = 9.0 mA, per Microsemi T4-LDS-0288 Rev. 1. This test condition ensures repeatable characterization of regulation performance and is used to specify ZZT = 10 Ω and αVZ = +0.080 %/°C. The 1N759 must be operated near this current to achieve datasheet-rated stability.
Is the 1N759 available in RoHS-compliant versions?
Yes, RoHS-compliant versions of the 1N759 are available for commercial-grade use only, marked with the "e3" suffix (e.g., 1N759A-1e3). These parts feature annealed matte-tin plating and comply with JEDEC standards, but JANTXV-qualified units remain non-RoHS due to tin-lead solder requirements for hermetic seal integrity.
What is the maximum power dissipation of the 1N759 under standard mounting conditions?
The 1N759 delivers 500 mW average power dissipation at TL = +50 °C with 0.375 inch (9.53 mm) lead length from body, derating linearly to zero at +175 °C. When mounted on a PCB, it provides 400 mW at TA = +55 °C, per Figure 2 in T4-LDS-0288. Exceeding these limits risks thermal runaway and parametric shift in the 1N759.
Does the 1N759 have radiation-hardened characteristics?
Yes, the 1N759 exhibits inherent radiation hardness as documented in Microsemi MicroNote 050. Its glass-encapsulated DO-35 structure and metallurgical bonding provide tolerance to total ionizing dose (TID) up to 100 krad(Si) with <5% VZ shift, making it suitable for satellite sensor interfaces and other space-qualified analog circuits where the 1N759 serves as a hardened reference element.
How is polarity marked on the 1N759 package?
The 1N759 uses a cathode band to indicate polarity: the banded end is the cathode and must be held at a higher potential than the non-banded (anode) end during Zener regulation. This marking aligns with JEDEC DO-35 mechanical standards and is visible on the glass body; incorrect orientation will prevent regulation and may cause forward conduction damage if overcurrent occurs.
1N759 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 12 V
- Tolerance:
- ±10%
- Power - Max:
- 400 mW
- Impedance (Max) (Zzt):
- 30 Ohms
- Current - Reverse Leakage @ Vr:
- 100 nA @ 1 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
1N759 FAQ
1.How can I place an order for 1N759 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N759 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N759 reliable?
The price and inventory of 1N759 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N759 is usually 5 days.
3.What payment methods are accepted for 1N759?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N759 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N759?
1N759 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N759 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N759?
For technical support, including 1N759 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N759 requirements.
6.How does Aetrix verify that 1N759 is sourced from the original manufacturer or authorized distributors?
All 1N759 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N759 meets industry standards.
7.What is the process for return or replacement of 1N759?
All 1N759 units undergo pre-shipment inspection (PSI). If there is an issue with 1N759, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N759 part is unused and in its original packaging.
Return procedure for 1N759:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N759 Tags
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MMBZ5240B-7-F
Diodes Incorporated
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BZT52C5V6T-7
Diodes Incorporated
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MMSZ5231B-7-F
Diodes Incorporated
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BZT52C15-7-F
Diodes Incorporated
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BZX84C3V3LT1G
onsemi
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MMSZ5245BS-7-F
Diodes Incorporated
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MMSZ4682T1G
onsemi
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BZT52C15S-7-F
Diodes Incorporated
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MM5Z5V1ST1G
onsemi
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SMAJ4744A-TP
Micro Commercial Co
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BZT52C3V6LP-7
Diodes Incorporated
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SMAZ12-13-F
Diodes Incorporated
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